Abstract:
Provided are a hybrid white organic light emitting diode (OLED) and a method of fabricating the same. A HOMO level difference between a fluorescent emission layer and an electron transport layer in an organic emission layer (OLED) becomes higher than that between the other layers or a LUMO level difference between a fluorescent emission layer and a hole transport layer is higher than that between the other layers, so that a recombination region is restricted to a part of an emission layer to obtain high-efficiency fluorescent light emission. In addition, triplet excitons that are not used in a fluorescent emission layer are transferred to an auxiliary emission layer formed to be spaced apart from a recombination region by a predetermined distance to emit light in a different color from the fluorescent emission layer, so that both singlet and triplet exicitons formed in the OLED are used to obtain high-efficiency white light emission.
Abstract:
PURPOSE: A method for sensing degradation in a lighting device and a lighting device using the same are provided to uniformly maintain the brightness of light generated in a light emitting part by controlling a driving signal applied to a light emitting diode by using light detected in a sensor unit. CONSTITUTION: An initial drive signal is generated(S10). Light is generated from an organic light emitting diode by using the initial drive signal(S20). A part of the generated light is received and sensing information is generated(S30). A compensation signal is generated by comparing the sensing information with reference information corresponding to the initial drive signal(S40). The compensated drive signal is generated by using the compensation signal(S50).
Abstract:
A white organic electro luminescence device and a method for manufacturing the same are provided to acquire a white light emitting characteristic having a high purity by forming a trap light emitting layer between a hole layer and an electron layer. A white organic electro luminescence device includes a substrate(210), a first electrode(220), hole layers(230,240), a light emitting layer(250), electron layers(260,270), and a second electrode(280). The first electrode(220) is formed on the substrate(210). The hole layers(230,240) are formed on the first electrode(220). The light emitting layer(250) has a dopant and a host, and has a trap light emitting layer(255) which is formed on an upper part of the positive hole to have a difference of energy level between the dopant and the host. The electron layers(260,270) are formed on the upper part of the light emitting layer(250). The second electrode(280) is formed on the electron layers(260,270).