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    FIELD EMISSION ELEMENT
    1.
    发明专利
    FIELD EMISSION ELEMENT 审中-公开

    公开(公告)号：JP2003203555A

    公开(公告)日：2003-07-18

    申请号：JP2002112503

    申请日：2002-04-15

    Applicant: KOREA ELECTRONICS TELECOMM

    Inventor： HWANG CHI SUN ,  SON YUNHO ,  LEE JIN HO ,  CHO KYOUNG IK

    IPC: H01J1/304 ,  H01J1/30 ,  H01J1/46 ,  H01J3/02 ,  H01J29/02 ,  H01J29/46 ,  H01J29/96 ,  H01L27/12 ,  H01L29/786

    Abstract: PROBLEM TO BE SOLVED: To provide a field emission element capable of preventing an increase in electric power consumption, and capable of improving reliability of the element. SOLUTION: In a three-pole type field emission element, the field emission element has a gate electrode 205, an emitter 204, and an anode 207, and is constituted so as to connect a resistance 209 between the gate electrode 205 and an external terminal 206 of this gate electrode. A resistance value of this resistance 209 is set so as to satisfy a condition of being larger by about 10 times or more than a resistance value up to an external terminal 206 of the gate electrode from the gate electrode 205, and smaller in characteristic time than an inverse number of a driving speed. That is, a resistance characteristic of this resistance 209 is set so as to become small such as having no influence on a field emission characteristic in normal operation, and become large such as being capable of controlling a quantity of leakage current generated in a state of electrically connecting a field emission electrode to the other electrode. COPYRIGHT: (C)2003,JPO

    FIELD EMISSION ELEMENT AND METHOD OF MANUFACTURE
    2.
    发明专利
    FIELD EMISSION ELEMENT AND METHOD OF MANUFACTURE 审中-公开

    公开(公告)号：JP2003203556A

    公开(公告)日：2003-07-18

    申请号：JP2002156358

    申请日：2002-05-29

    Applicant: KOREA ELECTRONICS TELECOMM

    Inventor： AHN SEONG DEOK ,  LEE JIN HO ,  CHO KYOUNG IK

    IPC: H01J1/30 ,  H01J1/304 ,  H01J9/02

    Abstract: PROBLEM TO BE SOLVED: To reduce driving voltage, and to reduce electric power consumption by forming a hole of nanometer size in the first place in a manufacturing process of a semiconductor element, and increasing the aspect ratio of an emitter by forming the emitter in the hole. SOLUTION: This field emission element is composed of an emitter electrode 24 formed on a silicon substrate 21, an insulating layer 25 formed on the emitter electrode 24, a nanohole 27 formed in the nanosize in the insulating layer 25, and exposing the emitter electrode 24, a catalyst layer 28 formed on a bottom surface of the nanohole 27, the emitter 29 formed in the nanohole 27, and a gate electrode 26 formed on the insulating layer 25 around the emitter 29, and has an effect capable of reducing the driving voltage, and capable of reducing the electric power consumption by forming the hole 27 of nanometer size in a semiconductor manufacturing process, and increasing the aspect ratio of the emitter 29 by forming the emitter 29 in the nanohole 27. COPYRIGHT: (C)2003,JPO

    FIELD EMISSION DISPLAY
    3.
    发明专利
    FIELD EMISSION DISPLAY 失效

    公开(公告)号：JPH10188864A

    公开(公告)日：1998-07-21

    申请号：JP26695097

    申请日：1997-09-30

    Applicant: KOREA ELECTRONICS TELECOMM

    Inventor： SONG YOON HO ,  LEE JIN HO ,  CHO KYOUNG IK ,  YOO HYUNG JOUN

    IPC: H01J29/96 ,  G09F9/30 ,  G09G3/20 ,  G09G3/22 ,  H01J1/30 ,  H01J29/04 ,  H01J31/12 ,  H04N9/12 ,  H01J31/15

    Abstract: PROBLEM TO BE SOLVED: To manufacture a field emission display of high picture quality and high density by reducing a cost. SOLUTION: A field emission element of a pixel array 20 is constituted by a silicon field emission element formed on an insulating substrate 10 so that a complementary polycrystalline silicon thin film transistor used as a basic circuit of a scan drive circuit 30 and a data drive circuit 10 can be easily integrated in the substrate 10 formed with the pixel array 20. In each pixel of the pixel array 20, a high voltage thin film transistor is attached, by applying a display signal through the high voltage thin film transistor, generation of low voltage in the scan and data drive circuit 30, 40 is attained.

    5.
    发明专利
    未知

    公开(公告)号：FR2757676B1

    公开(公告)日：2000-02-11

    申请号：FR9711999

    申请日：1997-09-26

    Applicant: KOREA ELECTRONICS TELECOMM

    Inventor： SONG YOON HO ,  LEE JIN HO ,  CHO KYOUNG IK ,  YOO HYUNG JOUN

    IPC: H01J29/96 ,  G09F9/30 ,  G09G3/20 ,  G09G3/22 ,  H01J1/30 ,  H01J29/04 ,  H01J31/12 ,  H04N9/12 ,  H01J29/46

    Abstract: The present invention relates to a field emission display which applies a field emission device (or field emitter) to a flat panel display. The field emission display in accordance with the present invention has the lower plate in which the pixel array and the scan and data driving circuits are integrated one insulating substrate, therefore, it is possible to implement a field emission display capable of providing a high quality picture in a low price. The voltage is applied to the scan and data driving circuits may considerably decrease through the tin film transistor attached to each pixel. The field emission characteristics are stabilized by the resistor attached to the field emission device so that reliable field emission display may be fabricated. Further, since all the processes are carried out at a low temperature, a glass, which is low in price and has a large area, may be used as an insulating substrate.

    Indium zinc oxide target and the preparing method thereof
    7.
    发明公开
    Indium zinc oxide target and the preparing method thereof 审中-公开
    氧化铅氧化锌靶及其制备方法

    公开(公告)号：KR20120066364A

    公开(公告)日：2012-06-22

    申请号：KR20100127666

    申请日：2010-12-14

    Applicant: KOREA ELECTRONICS TELECOMM ,  ADVANCED NANO PRODUCTS CO LTD

    Inventor： CHUNG SUNG MOOK ,  CHEONG WOO SEOK ,  HWANG CHI SUN ,  PARK SANG HEE ,  CHO KYOUNG IK ,  KIM SANG HUI ,  PARK CHANG WOO

    IPC: C23C14/08 ,  C23C14/34

    CPC classification number: C23C14/08 ,  C04B2235/3293 ,  C23C14/083 ,  C23C14/086

    Abstract: PURPOSE: An indium zinc oxide sputtering target and a method for manufacturing thereof are provided to obtain a sputtering target with a low resistance by employing titanium oxide as dopant. CONSTITUTION: An indium zinc oxide sputtering target comprises indium tin oxide, zinc oxide, and titanium oxide. The titanium oxide is TiO2-a employed as dopant instead of existing TiO2, where a is 0.5-1. The TiO2-a dopant improves the degree of freedom in the crystalline of a transparent film formed from the indium zinc oxide sputtering target, thereby enhancing the etching property of the transparent film.

    Abstract translation: 目的：提供一种铟锌氧化物溅射靶及其制造方法，通过使用氧化钛作为掺杂剂，获得具有低电阻的溅射靶。 构成：铟锌氧化物溅射靶包括氧化铟锡，氧化锌和氧化钛。 氧化钛是用作掺杂剂而不是现有TiO 2的TiO 2，其中a为0.5-1。 TiO 2 -a掺杂剂改善了由铟锌氧化物溅射靶形成的透明膜的结晶自由度，从而提高了透明膜的蚀刻性能。

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