公开(公告)号：JPH08162411A

公开(公告)日：1996-06-21

申请号：JP29719694

申请日：1994-11-30

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI BAN ,  IN YOSHIHIDE ,  HAKU SOUKIYOU

IPC: H01L21/205

Abstract: PURPOSE: To grow a comb-shaped thin-film having no defect by inserting a multilayer of a metallic binary field between two thin-films of a different kind having mutually greatly different lattice constants. CONSTITUTION: An MOCVD device is supplied with Ga gas and As gas, a GaAs buffer layer 2 of the same kind is grown on a GaAs substrate 1. A raw material gas containing a group III element (In or Ga) is injected, a raw material gas containing a group V element (As) is injected, and the thin layer 3 of a binary field containing the group III elements (In, Ga) and having a metallic component in high concentration is grown. In and Ga mixed at a fixed ratio are injected, and an InGaAs thin layer 4 is grown. Accordingly, when the InGaAs thin layer 4 is formed, dislocation is generated mainly along the interface of the lower section of the metallic thin layer 3, and dislocations due to the lattice mismatching is minimized, and the InGaAs thin-film having a comb-shaped surface and having no defect is obtained.