公开(公告)号：JPH10190153A

公开(公告)日：1998-07-21

申请号：JP20431897

申请日：1997-07-30

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： HAKU SOKYO ,  RI BAN

IPC: G02B5/08 ,  C23C14/54 ,  C23C16/52 ,  C30B29/40 ,  H01L21/205 ,  H01S5/00 ,  H01S5/028 ,  H01S5/183 ,  H01S5/187 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a method by which a film having a desired thickness can be grown in real time by using a laser beam having the same wavelength as a Bragg reflection film has. SOLUTION: After a plurality of buffer layers are formed on a semiconductor substrate, first and second epitaxial layers are grown on the buffer layers. The growth of the first and second epitaxial layers is continuously measured by using a laser beam having the same wavelength as the reflection wavelength of a Bragg reflection film and the period until the layers grow to the thicknesses of 1/4 wavelength is decided. Since the thickness of the Bragg reflection film grown thereafter is controlled based on the decided growing period, the epitaxial layers can be grown uniformly.

公开(公告)号：JPH08162411A

公开(公告)日：1996-06-21

申请号：JP29719694

申请日：1994-11-30

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI BAN ,  IN YOSHIHIDE ,  HAKU SOUKIYOU

IPC: H01L21/205

Abstract: PURPOSE: To grow a comb-shaped thin-film having no defect by inserting a multilayer of a metallic binary field between two thin-films of a different kind having mutually greatly different lattice constants. CONSTITUTION: An MOCVD device is supplied with Ga gas and As gas, a GaAs buffer layer 2 of the same kind is grown on a GaAs substrate 1. A raw material gas containing a group III element (In or Ga) is injected, a raw material gas containing a group V element (As) is injected, and the thin layer 3 of a binary field containing the group III elements (In, Ga) and having a metallic component in high concentration is grown. In and Ga mixed at a fixed ratio are injected, and an InGaAs thin layer 4 is grown. Accordingly, when the InGaAs thin layer 4 is formed, dislocation is generated mainly along the interface of the lower section of the metallic thin layer 3, and dislocations due to the lattice mismatching is minimized, and the InGaAs thin-film having a comb-shaped surface and having no defect is obtained.

公开(公告)号：JPH10321534A

公开(公告)日：1998-12-04

申请号：JP3812598

申请日：1998-02-04

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI BAN ,  HYAKU SOKYO ,  RI SHINKO

IPC: H01L21/205 ,  H01L21/20

Abstract: PROBLEM TO BE SOLVED: To form a high-quality supper lattice structure by forming an epitaxial InP layer on a lattice-matched InAlAs thin film after the thin film is formed on an InP substrate and forming a multilayered layer by repeatedly forming the multilayered structure of the InP substrate, InAlAs thin film, and epitaxial InP layer. SOLUTION: A lattice-matched InAlAs thin film 2 is grown on an InP substrate 1a having a (100) lattice plane by the MOCVD method. After the buffer film 2 is grown on the InP substrate 1a in such a way, an epitaxial InP layer 1b is formed on the film 2. When the InP layer 1b is again grown on the InAlAs thin film 2 after the thin film 2 is grown on the InP substrate 1a, a quantum line having a cross section of 10×10 nm or smaller is grown. When such an InP/InAlAs/InP multilayered thin film structure is repeatedly grown, a supper lattice can be manufactured in both the vertical and horizontal directions.

公开(公告)号：JPH10321950A

公开(公告)日：1998-12-04

申请号：JP3671198

申请日：1998-02-03

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI BAN ,  HYAKU SOKYO

IPC: H01S5/00 ,  H01S3/02 ,  H01S5/183 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To make it possible to adjust the laser wavelength of each element to any value and stabilize the laser generating characteristic over aging, by forming a first electron constraint layer in an upper part of a first superlattice mirror layer formed on a substrate, then growing a quantum well constraint layer, a second electron constraint layer, and a second superlattice mirrorlayer in this order, and then heat-treating the entire body at high temperatures. SOLUTION: The cross-sectional structure of a tunable laser is constituted of an n-InP substrate 10, an n-lower superlattice mirror layer 20 formed on the substrate 10, an active layer 30, and a p-upper superlattice mirror layer 40. The lower and the upper superlattice mirror layers 20, 40 have such a structure that InAlAs layers 21a-21e and InGaAlAs layers 22a-22f are alternately deposited, and the active layer 30 has a multiple quantum well layer 32 sandwiched between a first electron constraint layer 31a and a second electron constrain layer 31b. With this structure heat-treated at high temperatures, an InAlAs clad layer in the active layer 30 has an unordered lattice structure with a varying band gap and reflective index.

公开(公告)号：JPH08193813A

公开(公告)日：1996-07-30

申请号：JP31719894

申请日：1994-12-20

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI BAN ,  KIN TOKUHOU ,  HAKU MUNEYASU

IPC: G01B11/06 ,  C23C16/18 ,  C23C16/52 ,  H01L21/205

Abstract: PURPOSE: To accurately monitor the thickness and composition change of a crystal thin film when growing by causing a plurality of laser beams with different wavelengths to fall on the surface of a sample. CONSTITUTION: Each of two laser beams with mutually different wavelength emitted from laser beam generators 10 and 20 is caused to fall at an angle of 71 deg. in the vertical direction of the surface of a sample 2. Each of two beams reflected from the surface of the sample 2 is caused to fall on photo detectors 70 and 90 of the sample 2 by a filter 50. Therefore, the photo detector 70 detects light from the generator 10, and the photo detector 90 detects light from the generator 20. Signals from the photo detectors 60, 70, 80, and 90 are inputted to a computer 3 for comparison and analysis. That is, as the thickness of the growing thin film increases, the intensity (beam reflectivity) of the reflected beam changes due to interference. Thus, the growth speed of the thin film can be formed by analyzing the period of the interference pattern of each beam whose reflectivity changes.

公开(公告)号：JPH08143398A

公开(公告)日：1996-06-04

申请号：JP29973194

申请日：1994-12-02

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI BAN ,  IN YOSHIHIDE ,  HAKU SHIYUUKIYOU

IPC: C30B29/42 ,  H01L21/20 ,  H01L21/205 ,  H01L21/316 ,  H01L27/12