公开(公告)号：JPH08186125A

公开(公告)日：1996-07-16

申请号：JP31537194

申请日：1994-12-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： REN HEIRETSU ,  CHIYOU TOKUKOU ,  KAN TAIGEN ,  RI SHIYUUMIN ,  KEN GOJIYUN

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/205 ,  H01L29/732

Abstract: PURPOSE: To obtain a method for fabricating a heterojunction bipolar transistor in which the operational characteristics can be improved by decreasing the parasitic resistance of the base significantly through the use of a thin metal silicide film and varying the thickness of the film. CONSTITUTION: An Si substrate is heavily doped with impurity ions to form a conductive collector 21 and then a single crystal layer 22 of the collector, an isolation oxide and a collector sinker 24 are formed thereon. Subsequently, an SiGe base layer 25 is epitaxially grown on the entire surface of the substrate and an oxide is deposited and patterned. Ions are then implanted into the exposed external base region using the oxide as a mask before the mask oxide is removed. Thereafter, a thin TiSi film 26 for the base electrode is deposited by sputtering only above the base region and the thickness of the film can be diversified. Subsequently, a capping oxide is deposited on the thin film followed by deposition of an oxide 27 for isolating emitter and base over the entire surface of the substrate. In order to open a collector sinker, the oxide, the thin electrode film and the base layer are patterned and a side wall oxide 28 is deposited. Finally, the isolation oxide is etched partially to form an emitter layer 29.