公开(公告)号：JP2003101018A

公开(公告)日：2003-04-04

申请号：JP2002197871

申请日：2002-07-05

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM HYUN-TAK ,  KANG KWANG-YONG

IPC: H01L29/786 ,  H01L21/336 ,  H01L29/772 ,  H01L29/78 ,  H01L49/00

Abstract: PROBLEM TO BE SOLVED: To provide a field-effect transistor by utilizing abrupt metal-insulator phase transition. SOLUTION: The transistor is provided with a Mott's insulator 410 which is arranged on a substrate 400 and causes abrupt metal-insulator phase transition when a charged holes flow in; a ferroelectric film 420 which is arranged on the insulator and makes the charged holes flow into the Mott's insulator 410 when a constant voltage is applied; a gate electrode 430 which is arranged on the film and applies constant voltage to the ferroelectric film; a source electrode 440 which is electrically connected to the first surface of the Mott's insulator 410; and a drain electrode 450 which is electrically connected to the second surface of the Mott's insulator 410. The degree of integration and the switching speed of an element can be improved markedly, and appropriate holes for doping can be obtained at a low voltage, even if the film is not made thin largely.

公开(公告)号：WO2009045084A3

公开(公告)日：2009-05-28

申请号：PCT/KR2008005845

申请日：2008-10-06

Applicant: KOREA ELECTRONICS TELECOMM ,  YUN SUN-JIN ,  LEE YONG-WOOK ,  KIM HYUN-TAK ,  KIM BONG-JUN ,  LIM JUNGWOOK ,  CHOI SUNG-YOUL

Inventor： YUN SUN-JIN ,  LEE YONG-WOOK ,  KIM HYUN-TAK ,  KIM BONG-JUN ,  LIM JUNGWOOK ,  CHOI SUNG-YOUL

IPC: H01L31/10

CPC classification number: H01L27/14603 ,  H01L27/1464 ,  H01L31/113

Abstract: A photo-gating switch system comprising a photosensitive device formed on a substrate is provided. The photosensitive device may comprise a photosensitive layer and electrodes formed at both ends of the photosensitive layer. A light source irradiating light to the photosensitive device is integrated beneath the surface of the substrate.

Abstract translation: 提供了一种包括形成在衬底上的光敏器件的光电门控开关系统。 感光装置可以包括感光层和形成在感光层两端的电极。 将光照射到光敏器件的光源被集成在衬底的表面之下。

公开(公告)号：WO2009064098A3

公开(公告)日：2009-07-30

申请号：PCT/KR2008006630

申请日：2008-11-11

Applicant: KOREA ELECTRONICS TELECOMM ,  KIM HYUN-TAK ,  LEE YONG-WOOK ,  KIM BONG-JUN ,  YUN SUN-JIN

Inventor： KIM HYUN-TAK ,  LEE YONG-WOOK ,  KIM BONG-JUN ,  YUN SUN-JIN

IPC: G05F3/24

CPC classification number: H01L25/16 ,  H01L23/62 ,  H01L2924/0002 ,  H02H3/085 ,  H02H5/047 ,  H01L2924/00

Abstract: Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used. The circuit for controlling heat generation of a transistor includes a metal-insulator transition (MIT) device in which abrupt MIT occurs at a predetermined critical temperature; and a power transistor connected to a driving device and controlling power-supply to the driving device, wherein the MIT device is attached to a surface or heating portion of the transistor and is connected to a base terminal or gate terminal of the transistor or a surrounding circuit from a circuit point of view, and wherein when a temperature of the transistor increases to a temperature equal to or greater than the predetermined critical temperature, the MIT device reduces or shuts off a current of the transistor so as to prevent heat generation of the transistor.

Abstract translation: 提供了一种用于控制功率晶体管的发热的方法和电路，其中功率晶体管可以通过使用能够用作保险丝的金属 - 绝缘体转变（MIT）装置来防止功率晶体管的发热来保护，并且可以 半永久使用。 用于控制晶体管发热的电路包括金属 - 绝缘体转变（MIT）器件，其中在预定的临界温度下出现突发的MIT; 以及连接到驱动装置并控制对驱动装置的电源的功率晶体管，其中所述MIT装置附接到所述晶体管的表面或加热部分，并且连接到所述晶体管的基极或栅极端子或周围 电路，并且其中当晶体管的温度升高到等于或大于预定临界温度的温度时，MIT器件降低或切断晶体管的电流，以防止晶体管的发热 晶体管。

公开(公告)号：AU2003288774A1

公开(公告)日：2004-12-13

申请号：AU2003288774

申请日：2003-12-30

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YOUN DOO-HYEB ,  CHAE BYUNG-GYU ,  KIM HYUN-TAK ,  KANG KWANG-YONG

IPC: H01L21/316 ,  H01L29/772 ,  H01L49/00 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30

Abstract: Provided is a field effect transistor including an insulator-semiconductor transition material layer. The insulator-semiconductor transition material layer selectively provides a first state where charged holes are not introduced to a surface of the insulator-semiconductor transition material layer when a gate field is not applied and a second state where a large number of charged holes are introduced to the surface of the insulator-semiconductor transition material layer to form a conductive channel when a negative field is applied. A gate insulating layer is formed on the insulator-semiconductor transition material layer. A gate electrode is formed on the gate insulating layer to apply a negative field of a predetermined intensity to the insulator-semiconductor transition material layer. A source electrode and a drain electrode are disposed to face each other at both sides of the insulator-semiconductor transition material layer so that charge carriers can flow through the conductive channel while the insulator-semiconductor transition material layer is in the second state.

公开(公告)号：WO2012169802A2

公开(公告)日：2012-12-13

申请号：PCT/KR2012004500

申请日：2012-06-07

Applicant: KOREA ELECTRONICS TELECOMM ,  KIM HYUN-TAK ,  KIM BONGJUN ,  PARK JONG CHAN

Inventor： KIM HYUN-TAK ,  KIM BONGJUN ,  PARK JONG CHAN

IPC: G08B17/06 ,  G08B17/10

CPC classification number: G08B17/10 ,  G08B17/113

Abstract: The present invention pertains to a composite temperature and smoke alarm device which is capable of augmenting or maximizing safety and productivity, and includes: a smoke detecting unit for detecting smoke using first and second sensors which include a temperature-sensitive, smoke-detecting part arranged between first and second electrodes; a smoke level measuring unit for generating a smoke level measurement signal by comparing a difference between first and second smoke sensing signals, which are outputted from the first and second sensors, respectively, with a set reference signal; and a detection controlling unit for generating a fire alarm signal when the received smoke level measurement signal corresponds to a fire occurrence condition.

Abstract translation: 本发明涉及一种能够增加或最大化安全性和生产率的复合式温度和烟雾报警装置，包括：用于使用第一和第二传感器检测烟雾的烟雾检测单元，其包括温度敏感的烟雾检测部分，其布置 在第一和第二电极之间; 烟度测量单元，用于通过将从第一和第二传感器输出的第一和第二烟雾感测信号之间的差与设定的参考信号进行比较来产生烟度测量信号; 以及检测控制单元，用于当所接收的烟雾水平测量信号对应于火灾发生状况时产生火灾报警信号。

公开(公告)号：WO2009014348A3

公开(公告)日：2009-03-19

申请号：PCT/KR2008004202

申请日：2008-07-18

Applicant: KOREA ELECTRONICS TELECOMM ,  KIM HYUN-TAK ,  LEE YONG-WOOK ,  KIM BONG-JUN ,  CHOI SUNG-YOUL ,  YUN SUN-JIN

Inventor： KIM HYUN-TAK ,  LEE YONG-WOOK ,  KIM BONG-JUN ,  CHOI SUNG-YOUL ,  YUN SUN-JIN

IPC: H01L29/08

CPC classification number: H01L49/003

Abstract: Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventional gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode and an outlet electrode, which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode, which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.

Abstract translation: 本发明提供能够容易地控制不连续的MIT跳跃且不需要以往的栅极绝缘层的3端子MIT开关，包含3端子MIT开关的开关系统以及3端子MIT的MIT控制方法 开关。 该3端子MIT开关包括在转变电压中产生不连续MIT的2端子MIT装置，分别连接到2端子MIT装置的每个端子的入口电极和出口电极，以及控制电极 ，其连接到所述入口电极并且包括与所述入口电极的外部端子分离的外部端子，其中根据施加到所述控制电极的电压或电流来控制所述双端MIT装置的MIT。 开关系统包括3端子MIT开关，连接到入口电极的电压源，以及连接到控制电极的控制源。

公开(公告)号：DE102011007271A1

公开(公告)日：2011-11-24

申请号：DE102011007271

申请日：2011-04-13

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM HYUN-TAK ,  KIM BONGJUN

IPC: H01L29/78

Abstract: Es werden ein Feldeffekttransistor (FET) mit variablem Gate, der so ausgelegt ist, dass er eine Verringerung des Stroms zwischen einer Source und einem Drain wegen Wärme unterdrückt, während eine Temperatur des FET verringert wird, und eine elektrische und elektronische Vorrichtung, die den FET mit variablem Gate enthält, geschaffen. Der FET mit variablem Gate enthält einen FET und eine Gate-Steuervorrichtung, die an einer Oberfläche oder an einem Wärmeerzeugungsabschnitt des FET befestigt ist und mit einem Gate-Anschluss des FET verbunden ist, um eine Spannung des Gate-Anschlusses zu ändern. Durch die Gate-Steuervorrichtung, die die Spannung des Gate-Anschlusses ändert, wenn die Temperatur des FET über eine vorgegebene Temperatur zunimmt, wird ein Kanalstrom zwischen der Source und dem Drain gesteuert.

公开(公告)号：WO2013027965A3

公开(公告)日：2013-04-18

申请号：PCT/KR2012006501

申请日：2012-08-16

Applicant: KOREA ELECTRONICS TELECOMM ,  KIM HYUN-TAK ,  KIM BONGJUN ,  PARK JONG CHAN

Inventor： KIM HYUN-TAK ,  KIM BONGJUN ,  PARK JONG CHAN

IPC: G08B17/06

CPC classification number: G08B17/06 ,  H01C1/02 ,  H01C7/047 ,  H01H37/32 ,  H01L27/0248 ,  H01L27/0647 ,  H01L49/003 ,  H02H9/045

Abstract: The present invention relates to a MIT device molded with a clear compound epoxy and a fire detection device including the same. The fire detection device according to one embodiment of the present invention receives power from a power control unit, and the fire detection device comprises: a MIT device having a MIT chip molded with the clear compound epoxy; a diode bridge circuit for receiving power from the power control unit and providing non-polar power; a display circuit for receiving the non-polar power from the diode bridge circuit and generating a fire alarm in response to a detection signal from the MIT device; and a stabilization circuit for maintaining the detection signal for a predetermined period.

Abstract translation: 本发明涉及用透明复合环氧树脂模塑的MIT装置以及包括该装置的火灾探测装置。 根据本发明的一个实施例的火灾检测装置从电力控制单元接收电力，并且火灾检测装置包括：具有用透明复合环氧树脂模制的MIT芯片的MIT装置; 二极管电桥电路，用于从功率控制单元接收功率并提供非极性功率; 显示电路，用于接收来自所述二极管电桥电路的所述非极性电力并响应于来自所述MIT装置的检测信号而产生火警; 以及用于将检测信号保持预定时间段的稳定电路。

公开(公告)号：WO2012002764A2

公开(公告)日：2012-01-05

申请号：PCT/KR2011004838

申请日：2011-07-01

Applicant: KOREA ELECTRONICS TELECOMM ,  KIM HYUN-TAK ,  KIM BONG JUN

Inventor： KIM HYUN-TAK ,  KIM BONG JUN

IPC: H01L23/36

CPC classification number: H01L23/62 ,  H01L25/167 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45116 ,  H01L2224/45118 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45149 ,  H01L2224/45155 ,  H01L2224/45157 ,  H01L2224/4516 ,  H01L2224/45166 ,  H01L2224/45169 ,  H01L2224/45171 ,  H01L2224/45172 ,  H01L2224/4518 ,  H01L2224/45184 ,  H01L2224/45565 ,  H01L2224/45611 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01047 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/00 ,  H01L2224/48

Abstract: Provided are metal-semiconductor convergence electric circuit devices. The device includes a semiconductor device, a metal resistor exhibiting resistance increased with an increase in temperature thereof, and an interconnection line connecting the semiconductor device with the metal resistor in series and having a resistance lower than that of the metal resistor. The semiconductor device is configured to exhibit resistance decreased with an increase in temperature thereof and compensate the resistance increase of the metal resistor.

Abstract translation: 提供了金属 - 半导体会聚电路装置。 该器件包括半导体器件，呈现电阻随温度升高而呈现电阻的金属电阻器，以及将半导体器件与金属电阻器串联连接并具有低于金属电阻器的电阻的互连线。 半导体器件被配置为表现出随着其温度升高而降低的电阻并且补偿金属电阻器的电阻增加。

公开(公告)号：WO2009027826A3

公开(公告)日：2009-04-30

申请号：PCT/IB2008002441

申请日：2008-05-07

Applicant: KOREA ELECTRONICS TELECOMM ,  KIM HYUN-TAK ,  LEE YONG-WOOK ,  KIM BONG-JUN ,  CHOI SUNG-YOUL ,  YUN SUN-JIN

Inventor： KIM HYUN-TAK ,  LEE YONG-WOOK ,  KIM BONG-JUN ,  CHOI SUNG-YOUL ,  YUN SUN-JIN

IPC: H01L49/00

CPC classification number: H01L49/003

Abstract: Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventipnal gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode (200) and an outlet electrode (300), which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode (400), which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.

Abstract translation: 提供一种3端子MIT开关，其可以容易地控制不连续的MIT跳转，并且不需要常闭栅极绝缘层，包括3端子MIT开关的开关系统以及控制3端子MIT的MIT的方法 开关。 三端MIT开关包括一个2端MIT装置，它产生一个过渡电压的不连续MIT，一个入口电极（200）和一个出口电极（300），分别连接到两端MIT的每个端子 装置和控制电极（400），其连接到所述入口电极并且包括与所述入口电极的外部端子分离的外部端子，其中所述2端子MIT装置的MIT根据电压或 施加到控制电极的电流。 开关系统包括三端MIT开关，连接到入口电极的电压源和连接到控制电极的控制源。