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    FIELD-EFFECT TRANSISTOR
    1.
    发明专利
    FIELD-EFFECT TRANSISTOR 审中-公开

    公开(公告)号：JP2003101018A

    公开(公告)日：2003-04-04

    申请号：JP2002197871

    申请日：2002-07-05

    Applicant: KOREA ELECTRONICS TELECOMM

    Inventor： KIM HYUN-TAK ,  KANG KWANG-YONG

    IPC: H01L29/786 ,  H01L21/336 ,  H01L29/772 ,  H01L29/78 ,  H01L49/00

    Abstract: PROBLEM TO BE SOLVED: To provide a field-effect transistor by utilizing abrupt metal-insulator phase transition. SOLUTION: The transistor is provided with a Mott's insulator 410 which is arranged on a substrate 400 and causes abrupt metal-insulator phase transition when a charged holes flow in; a ferroelectric film 420 which is arranged on the insulator and makes the charged holes flow into the Mott's insulator 410 when a constant voltage is applied; a gate electrode 430 which is arranged on the film and applies constant voltage to the ferroelectric film; a source electrode 440 which is electrically connected to the first surface of the Mott's insulator 410; and a drain electrode 450 which is electrically connected to the second surface of the Mott's insulator 410. The degree of integration and the switching speed of an element can be improved markedly, and appropriate holes for doping can be obtained at a low voltage, even if the film is not made thin largely.

    Terahertz photoconductive antenna layer deposited on a condenser lens
    3.
    发明专利
    Terahertz photoconductive antenna layer deposited on a condenser lens 未知

    公开(公告)号：GB2484407A

    公开(公告)日：2012-04-11

    申请号：GB201117326

    申请日：2011-10-07

    Applicant: KOREA ELECTRONICS TELECOMM

    Inventor： PAEK MUN CHEOL ,  KANG KWANG-YONG ,  KWAK MIN HWAN ,  KANG SEUNGBEOM

    IPC: H01Q19/06 ,  G01J3/02 ,  H01Q15/02

    Abstract: An antenna device, or a method of its manufacture, comprises a photoconductive thin film 202 deposited on a condenser lens 201. A metal electrode 203 is formed on the photoconductive thin film 202 such that it provides an antenna element for generating or detecting terahertz electromagnetic signals. The condenser lens 201 may be a super-hemispherical shape and made of a high-resistive silicon whilst the photoconductive thin film 202 may be made of polycrystalline gallium arsenide (GaAs). The condenser lens 201 may be mounted in a holder which leaves exposed the surface area of the lens on to which the photoconductive layer 202 is to be deposited. The holder may comprise a mounting portion with a concave shape to receive the corresponding shape of the lens 201 and a cover portion with a through hole. The simple antenna device may be provided quickly, effectively and cheaply.

    FIELD EFFECT TRANSISTOR USING INSULATOR-SEMICONDUCTOR TRANSITION MATERIAL LAYER AS CHANNEL MATERIAL AND METHOD OF MANUFACTURING THE SAME
    4.
    发明专利
    FIELD EFFECT TRANSISTOR USING INSULATOR-SEMICONDUCTOR TRANSITION MATERIAL LAYER AS CHANNEL MATERIAL AND METHOD OF MANUFACTURING THE SAME 未知

    公开(公告)号：AU2003288774A1

    公开(公告)日：2004-12-13

    申请号：AU2003288774

    申请日：2003-12-30

    Applicant: KOREA ELECTRONICS TELECOMM

    Inventor： YOUN DOO-HYEB ,  CHAE BYUNG-GYU ,  KIM HYUN-TAK ,  KANG KWANG-YONG

    IPC: H01L21/316 ,  H01L29/772 ,  H01L49/00 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30

    Abstract: Provided is a field effect transistor including an insulator-semiconductor transition material layer. The insulator-semiconductor transition material layer selectively provides a first state where charged holes are not introduced to a surface of the insulator-semiconductor transition material layer when a gate field is not applied and a second state where a large number of charged holes are introduced to the surface of the insulator-semiconductor transition material layer to form a conductive channel when a negative field is applied. A gate insulating layer is formed on the insulator-semiconductor transition material layer. A gate electrode is formed on the gate insulating layer to apply a negative field of a predetermined intensity to the insulator-semiconductor transition material layer. A source electrode and a drain electrode are disposed to face each other at both sides of the insulator-semiconductor transition material layer so that charge carriers can flow through the conductive channel while the insulator-semiconductor transition material layer is in the second state.

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