公开(公告)号：KR20100012783A

公开(公告)日：2010-02-08

申请号：KR20080101118

申请日：2008-10-15

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： LIM JUNG WOOK ,  KIM JUN KWAN ,  YUN SUN JIN ,  KIM HYUN TAK

IPC: H01C7/10

Abstract: PURPOSE: A method for manufacturing an optical device with a thin film type nonlinear current characteristic is provided to obtain a nonlinear current characteristic using the optical device which reacts with the light from a light emitting diode. CONSTITUTION: A zinc oxide is deposited by a sputtering method using a zinc oxide target(S100). A deposition process is performed under an argon atmosphere without the oxygen injection. The nitrogen is additionally injected in a deposition thickness of 50 to 1000 nm. A thermal process is performed under the oxygen atmosphere after a thin film deposition process(S110). The thermal process is performed by an in-situ method using a growth chamber in a vacuum state or an ex-situ process using a thermal chamber outside the vacuum state. A deposition temperature is between a room temperature and 400 degrees centigrade. The temperature of the thermal process is between 100 to 600 degrees centigrade.

Abstract translation: 目的：提供一种制造具有薄膜型非线性电流特性的光学器件的方法，以使用与来自发光二极管的光反应的光学器件来获得非线性电流特性。 构成：使用氧化锌靶通过溅射法沉积氧化锌（S100）。 在氩气氛下进行沉积工艺，而不注入氧气。 另外以50至1000nm的沉积厚度注入氮气。 在薄膜沉积工艺之后，在氧气氛下进行热处理（S110）。 热处理通过使用真空状态的生长室的原位方法或使用真空状态之外的热室进行的非原位方法进行。 沉积温度在室温和400摄氏度之间。 热处理温度介于100至600摄氏度之间。