公开(公告)号：WO2007046628A8

公开(公告)日：2009-08-06

申请号：PCT/KR2006004228

申请日：2006-10-18

Applicant: KOREA ELECTRONICS TELECOMM ,  LIM JUNG-WOOK ,  YUN SUN-JIN ,  KIM HYUN TAK ,  CHAE BYUNG-GYU ,  KIM BONG-JUN ,  KANG KWANG-YONG

Inventor： LIM JUNG-WOOK ,  YUN SUN-JIN ,  KIM HYUN TAK ,  CHAE BYUNG-GYU ,  KIM BONG-JUN ,  KANG KWANG-YONG

IPC: H01L21/316

CPC classification number: H01B3/12 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/3162 ,  H01L49/003

公开(公告)号：DE602004031827D1

公开(公告)日：2011-04-28

申请号：DE602004031827

申请日：2004-12-14

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM HYUN TAK ,  YOUN DOO HYEB ,  CHAE BYUNG GYU ,  KANG KWANG YONG ,  LIM YONG SIK ,  KIM GYUNGOCK ,  MAENG SUNGLYUL ,  KIM SEONG HYUN

IPC: H01L29/00

公开(公告)号：AT502404T

公开(公告)日：2011-04-15

申请号：AT04257769

申请日：2004-12-14

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM HYUN TAK ,  YOUN DOO HYEB ,  CHAE BYUNG GYU ,  KANG KWANG YONG ,  LIM YONG SIK ,  KIM GYUNGOCK ,  MAENG SUNGLYUL ,  KIM SEONG HYUN

IPC: H01L49/00

Abstract: Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-tenninal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer,

公开(公告)号：KR20100012783A

公开(公告)日：2010-02-08

申请号：KR20080101118

申请日：2008-10-15

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： LIM JUNG WOOK ,  KIM JUN KWAN ,  YUN SUN JIN ,  KIM HYUN TAK

IPC: H01C7/10

Abstract: PURPOSE: A method for manufacturing an optical device with a thin film type nonlinear current characteristic is provided to obtain a nonlinear current characteristic using the optical device which reacts with the light from a light emitting diode. CONSTITUTION: A zinc oxide is deposited by a sputtering method using a zinc oxide target(S100). A deposition process is performed under an argon atmosphere without the oxygen injection. The nitrogen is additionally injected in a deposition thickness of 50 to 1000 nm. A thermal process is performed under the oxygen atmosphere after a thin film deposition process(S110). The thermal process is performed by an in-situ method using a growth chamber in a vacuum state or an ex-situ process using a thermal chamber outside the vacuum state. A deposition temperature is between a room temperature and 400 degrees centigrade. The temperature of the thermal process is between 100 to 600 degrees centigrade.

Abstract translation: 目的：提供一种制造具有薄膜型非线性电流特性的光学器件的方法，以使用与来自发光二极管的光反应的光学器件来获得非线性电流特性。 构成：使用氧化锌靶通过溅射法沉积氧化锌（S100）。 在氩气氛下进行沉积工艺，而不注入氧气。 另外以50至1000nm的沉积厚度注入氮气。 在薄膜沉积工艺之后，在氧气氛下进行热处理（S110）。 热处理通过使用真空状态的生长室的原位方法或使用真空状态之外的热室进行的非原位方法进行。 沉积温度在室温和400摄氏度之间。 热处理温度介于100至600摄氏度之间。

公开(公告)号：EP1678766A4

公开(公告)日：2007-04-25

申请号：EP04725203

申请日：2004-04-01

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YOUN DOO HYEB ,  KIM HYUN TAK ,  CHAE BYUNG GYU ,  KANG KWANG YONG ,  MAENG SUNG LYUL

IPC: H01L29/78 ,  H01L49/00

CPC classification number: H01L49/003

Abstract: Provided is a metal-insulator-transition switching transistor with a gate electrode on a silicon substrate (back-gate structure) and a metal-insulator-transition channel layer of VO2 that changes from an insulator phase to a metal phase, or vice versa, depending on a variation of an electric field, and a method for manufacturing the same, whereby it is possible to fabricate a metal-insulator-transition switching transistor having high current gain characteristics and being stable thermally.