公开(公告)号：JPH0635172A

公开(公告)日：1994-02-10

申请号：JP12390793

申请日：1993-05-26

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： GO YOUKO ,  ZEN EICHIN ,  KURUMA SAIGEN ,  KIN TAKASHIGE

IPC: G03F1/00 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027 ,  G03F1/08

Abstract: PURPOSE: To improve the resolution and the focal depth by improving the property of light made incident on a main mask (or passing the main mask), namely, the angle of incidence (or the angle of transmission) of light and the distribution based on this angle in the mask level other than the exposure equipment level. CONSTITUTION: A mask is provided which has dummy diffraction layers 20 and 20a used as an auxiliary with a main mask at in executing a lithography process with a light exposure equipment. When the exposure equipment using deformation illumination and a super-resolution filter is used, these dummy diffraction layers 20 and 20a are used as an aid together with the main mask 10 and are constituted into a minute repeat pattern where an image is not transmitted to a wafer.