公开(公告)号：JPH0635172A

公开(公告)日：1994-02-10

申请号：JP12390793

申请日：1993-05-26

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： GO YOUKO ,  ZEN EICHIN ,  KURUMA SAIGEN ,  KIN TAKASHIGE

IPC: G03F1/00 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027 ,  G03F1/08

Abstract: PURPOSE: To improve the resolution and the focal depth by improving the property of light made incident on a main mask (or passing the main mask), namely, the angle of incidence (or the angle of transmission) of light and the distribution based on this angle in the mask level other than the exposure equipment level. CONSTITUTION: A mask is provided which has dummy diffraction layers 20 and 20a used as an auxiliary with a main mask at in executing a lithography process with a light exposure equipment. When the exposure equipment using deformation illumination and a super-resolution filter is used, these dummy diffraction layers 20 and 20a are used as an aid together with the main mask 10 and are constituted into a minute repeat pattern where an image is not transmitted to a wafer.

公开(公告)号：JPH10247622A

公开(公告)日：1998-09-14

申请号：JP33492897

申请日：1997-11-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： SAI SOSHU ,  ZEN EICHIN ,  KIN HOYU ,  YOO HYUNG JOUN

IPC: G03F1/22 ,  H01L21/027 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To make largest the contact between alignment signals, which are generated from an alignment mark, by a method wherein the alignment mark is formed on a membrane on the part of an alignment window and the membrane part excluded the alignment mark part is removed to form a through hole. SOLUTION: A selected part of an X-ray absorber is removed in an electron beam lithography process and a anisotropic etching process. Photoresists 130 are respectively applied on the upper part of a first X-ray transmission body 12 and the upper part of a second X-ray transmission body 13. The photoresists 130 are patterned in such a way that the transmission body 12 of the part of an alignment window 15R and the transmission body 13 of the parts of a main chip window 14R and the window 15R are exposed. Exposed parts of the transmission bodies 12 and 13 are removed using the photoresists 130 as etching masks. A mask substrate 11 is etched until the transmission body 12 is exposed using the patterned photoresists 130 as etching masks.