Abstract:
PURPOSE: A method for manufacturing an optical device with a thin film type nonlinear current characteristic is provided to obtain a nonlinear current characteristic using the optical device which reacts with the light from a light emitting diode. CONSTITUTION: A zinc oxide is deposited by a sputtering method using a zinc oxide target(S100). A deposition process is performed under an argon atmosphere without the oxygen injection. The nitrogen is additionally injected in a deposition thickness of 50 to 1000 nm. A thermal process is performed under the oxygen atmosphere after a thin film deposition process(S110). The thermal process is performed by an in-situ method using a growth chamber in a vacuum state or an ex-situ process using a thermal chamber outside the vacuum state. A deposition temperature is between a room temperature and 400 degrees centigrade. The temperature of the thermal process is between 100 to 600 degrees centigrade.
Abstract:
PURPOSE: An electronic sunlight blocking device is provided to use a simple electrochromic element which does not have an electrolyte to drastically change a light transmitting rate, thereby blocking light when a current value is larger than a specific value. CONSTITUTION: A first electrode(32) is arranged on a substrate(31). A light transmitting rate changing material(34) is arranged on the first electrode. The light transmitting rate changing material changes a light transmitting rate according to a current quantity. A second electrode(33) is arranged on the light transmitting rate changing material. The light transmitting rate changing material has at least one layer. A light absorbing layer occupies a portion of the light transmitting rate changing material. The light absorbing layer generates currents using sunlight.