FABRICATION METHOD OF OPTICAL THIN FILM DEVICE SHOWING NONLINEAR CURRENT BEHAVIOR AND PHOTO TRANSISTOR USING THE OPTICAL DEVICE
    1.
    发明公开
    FABRICATION METHOD OF OPTICAL THIN FILM DEVICE SHOWING NONLINEAR CURRENT BEHAVIOR AND PHOTO TRANSISTOR USING THE OPTICAL DEVICE 审中-公开
    使用光学器件显示非线性电流行为和光电晶体的光学薄膜器件的制造方法

    公开(公告)号:KR20100012783A

    公开(公告)日:2010-02-08

    申请号:KR20080101118

    申请日:2008-10-15

    Abstract: PURPOSE: A method for manufacturing an optical device with a thin film type nonlinear current characteristic is provided to obtain a nonlinear current characteristic using the optical device which reacts with the light from a light emitting diode. CONSTITUTION: A zinc oxide is deposited by a sputtering method using a zinc oxide target(S100). A deposition process is performed under an argon atmosphere without the oxygen injection. The nitrogen is additionally injected in a deposition thickness of 50 to 1000 nm. A thermal process is performed under the oxygen atmosphere after a thin film deposition process(S110). The thermal process is performed by an in-situ method using a growth chamber in a vacuum state or an ex-situ process using a thermal chamber outside the vacuum state. A deposition temperature is between a room temperature and 400 degrees centigrade. The temperature of the thermal process is between 100 to 600 degrees centigrade.

    Abstract translation: 目的:提供一种制造具有薄膜型非线性电流特性的光学器件的方法,以使用与来自发光二极管的光反应的光学器件来获得非线性电流特性。 构成:使用氧化锌靶通过溅射法沉积氧化锌(S100)。 在氩气氛下进行沉积工艺,而不注入氧气。 另外以50至1000nm的沉积厚度注入氮气。 在薄膜沉积工艺之后,在氧气氛下进行热处理(S110)。 热处理通过使用真空状态的生长室的原位方法或使用真空状态之外的热室进行的非原位方法进行。 沉积温度在室温和400摄氏度之间。 热处理温度介于100至600摄氏度之间。

    Electronic blind device
    2.
    发明公开
    Electronic blind device 审中-公开
    电子盲装置

    公开(公告)号:KR20120056727A

    公开(公告)日:2012-06-04

    申请号:KR20100118402

    申请日:2010-11-25

    Abstract: PURPOSE: An electronic sunlight blocking device is provided to use a simple electrochromic element which does not have an electrolyte to drastically change a light transmitting rate, thereby blocking light when a current value is larger than a specific value. CONSTITUTION: A first electrode(32) is arranged on a substrate(31). A light transmitting rate changing material(34) is arranged on the first electrode. The light transmitting rate changing material changes a light transmitting rate according to a current quantity. A second electrode(33) is arranged on the light transmitting rate changing material. The light transmitting rate changing material has at least one layer. A light absorbing layer occupies a portion of the light transmitting rate changing material. The light absorbing layer generates currents using sunlight.

    Abstract translation: 目的:提供一种电子太阳光遮挡装置,以使用不具有电解质的简单电致变色元件来显着改变透光率,从而当电流值大于特定值时阻挡光。 构成:第一电极(32)布置在基板(31)上。 光传输速率改变材料(34)布置在第一电极上。 光传输速率变化材料根据电流量改变透光率。 第二电极(33)设置在透光率变化材料上。 透光率变化材料具有至少一层。 光吸收层占据透光率变化材料的一部分。 光吸收层使用阳光产生电流。

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