公开(公告)号：WO0172430A3

公开(公告)日：2002-03-07

申请号：PCT/US0109823

申请日：2001-03-27

Applicant: LAM RES CORP

Inventor： ANDERSON DON E ,  MIKHAYLICH KATRINA A ,  RAVKIN MIKE ,  DELARIOS JOHN M

IPC: B05B1/02 ,  B05B1/20 ,  B08B1/04 ,  B08B3/04 ,  H01L21/00 ,  H01L21/304

CPC classification number: H01L21/67051 ,  B08B1/04 ,  B08B3/04 ,  Y10S134/902 ,  Y10S239/19

Abstract: A drip manifold (220) having drip nozzles (200) configured to form controlled droplets (204a) is provided for use in wafer cleaning systems (120). The drip manifold (220) includes a plurality of drip nozzles (200) that are secured to the drip manifold (220). Each of the plurality of drip nozzles (200) has a passage (205) defined between a first end (201a) and a second end (201b). A sapphire orifice (202) is defined within the passage (205) and is located at the first end (201a) of the drip nozzle (200). The sapphire orifice (202) is angled to produce a fluid stream that is reflected within the passage (205) and toward the second end (201b) to form one or more uniform drops (204a) over a brush (300).

Abstract translation: 设置有用于形成受控液滴（204a）的具有滴水嘴（200）的滴水歧管（220）用于晶片清洁系统（120）。 滴水歧管（220）包括固定在滴水歧管（220）上的多个滴水嘴（200）。 多个滴水喷嘴（200）中的每一个具有限定在第一端（201a）和第二端（201b）之间的通道（205）。 蓝宝石孔口（202）被限定在通道（205）内并且位于滴水嘴（200）的第一端（201a）处。 蓝宝石孔口（202）成角度以产生在通道（205）内反射并朝向第二端（201b）反射的流体流，以在刷子（300）上方形成一个或多个均匀的液滴（204a）。

公开(公告)号：DE60042970D1

公开(公告)日：2009-10-29

申请号：DE60042970

申请日：2000-05-30

Applicant: LAM RES CORP

Inventor： MIKHAYLICH KATRINA A ,  RAVKIN MIKE ,  ANDERSON DON E

IPC: H01L21/00 ,  H01L21/304

Abstract: A method and a system are provided for cleaning a surface of a wafer. The method starts by scrubbing the surface of the wafer with a cleaning brush that applies a chemical solution to the surface of the wafer. In one example, the cleaning brush implements a through the brush (TTB) technique to apply the chemicals. The scrubbing is generally performed in a brush box, with a top cleaning brush and a bottom cleaning brush. The top cleaning brush is then removed from contact with the surface of the wafer. The chemical concentration in the top brush may be maintained at substantially the same concentration that was in the brush during the scrubbing operation. Next, a flow of water (preferably de-ionized water) is delivered to the surface of the wafer. The delivery of water is preferably configured to remove substantially all of the chemical solution from the surface of the wafer before proceeding to a next cleaning operation.

公开(公告)号：AU4783101A

公开(公告)日：2001-10-08

申请号：AU4783101

申请日：2001-03-27

Applicant: LAM RES CORP

Inventor： ANDERSON DON E ,  MIKHAYLICH KATRINA A ,  RAVKIN MIKE ,  DELARIOS JOHN M

IPC: B05B1/02 ,  B05B1/20 ,  B08B1/04 ,  B08B3/04 ,  H01L21/00 ,  H01L21/304

Abstract: A method for cleaning a wafer with a drip nozzle being configured for use in a drip manifold that is oriented over a brush of a wafer cleaning system is provided. The drip nozzle has a first end and a second end with a passage defined there between where the passage includes a wall that extends longitudinally between the first end and the second end. An orifice is defined within the passage and located at the first end of the drip nozzle. The method includes inputting a fluid into the drip nozzle at an acute angle relative to a longitudinal extension of the wall and reflecting the fluid stream off an internal wall of the drip nozzle at least twice in a direction that is toward the second end. The method further includes outputting at least one substantially uniform drop from the second end of the passage.

公开(公告)号：AU5304600A

公开(公告)日：2001-01-02

申请号：AU5304600

申请日：2000-05-30

Applicant: LAM RES CORP

Inventor： MIKHAYLICH KATRINA A ,  RAVKIN MIKE ,  ANDERSON DON E

IPC: H01L21/304 ,  H01L21/00

Abstract: A method and a system are provided for cleaning a surface of a wafer. The method starts by scrubbing the surface of the wafer with a cleaning brush that applies a chemical solution to the surface of the wafer. In one example, the cleaning brush implements a through the brush (TTB) technique to apply the chemicals. The scrubbing is generally performed in a brush box, with a top cleaning brush and a bottom cleaning brush. The top cleaning brush is then removed from contact with the surface of the wafer. The chemical concentration in the top brush may be maintained at substantially the same concentration that was in the brush during the scrubbing operation. Next, a flow of water (preferably de-ionized water) is delivered to the surface of the wafer. The delivery of water is preferably configured to remove substantially all of the chemical solution from the surface of the wafer before proceeding to a next cleaning operation.