公开(公告)号：WO2009151656A3

公开(公告)日：2010-03-04

申请号：PCT/US2009035030

申请日：2009-02-24

Applicant: LAM RES CORP ,  YUN SEOKMIN ,  ZHU JI ,  DELARIOS JOHN M ,  WILCOXSON MARK

Inventor： YUN SEOKMIN ,  ZHU JI ,  DELARIOS JOHN M ,  WILCOXSON MARK

IPC: H01L21/302 ,  H01L21/31

CPC classification number: H01L21/67051 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31138

Abstract: A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.

Abstract translation: 用于在蚀刻操作之后清洁衬底表面的方法和系统包括确定与衬底的表面相关联的多个工艺参数。 工艺参数定义与衬底表面相关的特性，例如待清洁的衬底表面的特性，待除去的污染物，在衬底上形成的特征以及在制造操作中使用的化学品。 基于工艺参数识别多个应用化学物质。 多种应用化学品包括作为乳液的第一应用化学品，其具有与第一不混溶液体组合的第一不混溶液体和分散在第一不混溶液体内的固体颗粒。 包括第一应用化学物质的多种施加化学物质被施加到基底的表面，使得组合的化学物质通过从衬底的表面基本上除去颗粒和聚合物残留的污染物同时保持特征的特征而增强了清洁过程， 通过其形成特征的低k电介质材料。

公开(公告)号：WO0172430A3

公开(公告)日：2002-03-07

申请号：PCT/US0109823

申请日：2001-03-27

Applicant: LAM RES CORP

Inventor： ANDERSON DON E ,  MIKHAYLICH KATRINA A ,  RAVKIN MIKE ,  DELARIOS JOHN M

IPC: B05B1/02 ,  B05B1/20 ,  B08B1/04 ,  B08B3/04 ,  H01L21/00 ,  H01L21/304

CPC classification number: H01L21/67051 ,  B08B1/04 ,  B08B3/04 ,  Y10S134/902 ,  Y10S239/19

Abstract: A drip manifold (220) having drip nozzles (200) configured to form controlled droplets (204a) is provided for use in wafer cleaning systems (120). The drip manifold (220) includes a plurality of drip nozzles (200) that are secured to the drip manifold (220). Each of the plurality of drip nozzles (200) has a passage (205) defined between a first end (201a) and a second end (201b). A sapphire orifice (202) is defined within the passage (205) and is located at the first end (201a) of the drip nozzle (200). The sapphire orifice (202) is angled to produce a fluid stream that is reflected within the passage (205) and toward the second end (201b) to form one or more uniform drops (204a) over a brush (300).

Abstract translation: 设置有用于形成受控液滴（204a）的具有滴水嘴（200）的滴水歧管（220）用于晶片清洁系统（120）。 滴水歧管（220）包括固定在滴水歧管（220）上的多个滴水嘴（200）。 多个滴水喷嘴（200）中的每一个具有限定在第一端（201a）和第二端（201b）之间的通道（205）。 蓝宝石孔口（202）被限定在通道（205）内并且位于滴水嘴（200）的第一端（201a）处。 蓝宝石孔口（202）成角度以产生在通道（205）内反射并朝向第二端（201b）反射的流体流，以在刷子（300）上方形成一个或多个均匀的液滴（204a）。

公开(公告)号：EP2272086A4

公开(公告)日：2013-10-16

申请号：EP09762952

申请日：2009-02-24

Applicant: LAM RES CORP

Inventor： YUN SEOKMIN ,  ZHU JI ,  DELARIOS JOHN M ,  WILCOXSON MARK

IPC: H01L21/31 ,  H01L21/306 ,  H01L21/67

CPC classification number: H01L21/67051 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31138

公开(公告)号：EP1086191A4

公开(公告)日：2004-11-10

申请号：EP99907149

申请日：1999-02-18

Applicant: LAM RES CORP

Inventor： LI XU ,  ZHAO YUEXING ,  HYMES DIANE J ,  DELARIOS JOHN M

IPC: C11D1/00 ,  C09K13/00 ,  C09K13/06 ,  C09K13/08 ,  C11D3/02 ,  C11D7/02 ,  C11D7/04 ,  C11D7/08 ,  C11D7/26 ,  C11D11/00 ,  C23G1/10 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3205 ,  H01L21/321 ,  C09K13/02 ,  C09K13/04

CPC classification number: H01L21/02074 ,  C09K13/00 ,  C11D7/08 ,  C11D7/265 ,  C11D11/0047 ,  C23G1/103

Abstract: A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination. The figure illustrates a flowchart of one embodiment of the process of the present invention wherein (310) is the step of polishing a copper layer on a semiconductor substrate followed by (320) the step of placing the polished semiconductor substrate in a scrubber followed by (330) the step of scrubbing the polished semiconductor substrate and ending with (340) the step of applying an acidic cleaning solution to the polished semiconductor substrate during scrubbing.

公开(公告)号：WO2009008982A3

公开(公告)日：2009-04-09

申请号：PCT/US2008008199

申请日：2008-06-30

Applicant: LAM RES CORP ,  RAVKIN MICHAEL ,  KABANSKY ALEX ,  DELARIOS JOHN M

Inventor： RAVKIN MICHAEL ,  KABANSKY ALEX ,  DELARIOS JOHN M

IPC: F26B21/00 ,  F26B21/06

CPC classification number: B08B3/04 ,  H01L21/67028 ,  H01L21/67051 ,  Y10S134/902

Abstract: A system for processing a substrate is described. The system includes a proximity head, a mechanism, and a liquid supply. The proximity head is configured to generate a controlled meniscus. Specifically, the proximity head has a plurality of dispensing nozzles formed on a face of the proximity head. The dispensing nozzles are configured to supply a liquid to the meniscus and the suction holes are added to remove a used liquid from the meniscus. The mechanism moves the proximity head or the substrate with respect to each other while maintaining contact between the meniscus and a surface of the substrate. The movement causes a thin layer of the liquid to remain on the surface after being contacted by the meniscus. The liquid supply is in fluid communication with the dispensing nozzles, and is configured to balance an amount of the liquid delivered to the meniscus with an amount of liquid removed from the meniscus, the amount of liquid removed from the meniscus including at least the thin layer of the liquid remaining on the surface of the substrate.

Abstract translation: 描述了用于处理基板的系统。 该系统包括一个临近头，一个机构和一个液体供应。 接近头被配置为生成受控弯月面。 具体而言，接近头具有形成在接近头的表面上的多个分配喷嘴。 分配喷嘴构造成向弯月面供应液体，并且添加抽吸孔以从弯月面移除使用过的液体。 该机构使接近头或基底相对于彼此移动，同时保持弯月面与基底表面之间的接触。 该运动使液体薄层在与弯月面接触后保留在表面上。 液体供应装置与分配喷嘴流体连通，并且被配置为平衡输送到弯月面的液体的量与从弯月面移除的一定量的液体，从弯月面移除的液体的量包括至少薄层 剩余在基材表面上的液体。

公开(公告)号：WO2007078956A3

公开(公告)日：2008-01-03

申请号：PCT/US2006048552

申请日：2006-12-18

Applicant: LAM RES CORP ,  FREER ERIK M ,  DELARIOS JOHN M ,  MIKHAYLICHENKO KATRINA ,  RAVKIN MICHAEL ,  KOROLIK MIKHAIL ,  REDEKER FRITZ C

Inventor： FREER ERIK M ,  DELARIOS JOHN M ,  MIKHAYLICHENKO KATRINA ,  RAVKIN MICHAEL ,  KOROLIK MIKHAIL ,  REDEKER FRITZ C

IPC: B08B3/00

CPC classification number: B08B3/024 ,  B08B3/003 ,  B08B3/08 ,  B08B6/00 ,  H01L21/67051

Abstract: A method and system for cleaning a surface, having particulate matter thereon, of a substrate features impinging upon the surface a jet of a liquid having coupling elements entrained therein. A sufficient drag force is imparted upon the coupling elements to have the same move with respect to the liquid and cause the particulate matter to move with respect to the substrate.

Abstract translation: 一种用于清洁其上具有颗粒物质的表面的表面的方法和系统，其特征在于其表面上具有夹带在其中的具有耦合元件的液体的射流。 赋予耦合元件足够的阻力以相对于液体具有相同的移动并使颗粒物质相对于基底移动。

公开(公告)号：AU4783101A

公开(公告)日：2001-10-08

申请号：AU4783101

申请日：2001-03-27

Applicant: LAM RES CORP

Inventor： ANDERSON DON E ,  MIKHAYLICH KATRINA A ,  RAVKIN MIKE ,  DELARIOS JOHN M

IPC: B05B1/02 ,  B05B1/20 ,  B08B1/04 ,  B08B3/04 ,  H01L21/00 ,  H01L21/304

Abstract: A method for cleaning a wafer with a drip nozzle being configured for use in a drip manifold that is oriented over a brush of a wafer cleaning system is provided. The drip nozzle has a first end and a second end with a passage defined there between where the passage includes a wall that extends longitudinally between the first end and the second end. An orifice is defined within the passage and located at the first end of the drip nozzle. The method includes inputting a fluid into the drip nozzle at an acute angle relative to a longitudinal extension of the wall and reflecting the fluid stream off an internal wall of the drip nozzle at least twice in a direction that is toward the second end. The method further includes outputting at least one substantially uniform drop from the second end of the passage.

公开(公告)号：DE69938832D1

公开(公告)日：2008-07-10

申请号：DE69938832

申请日：1999-02-18

Applicant: LAM RES CORP

Inventor： LI XU ,  ZHAO YUEXING ,  HYMES DIANE J ,  DELARIOS JOHN M

IPC: C09K13/00 ,  C11D1/00 ,  C09K13/02 ,  C09K13/04 ,  C09K13/06 ,  C09K13/08 ,  C11D3/02 ,  C11D7/02 ,  C11D7/04 ,  C11D7/08 ,  C11D7/26 ,  C11D11/00 ,  C23G1/10 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3205 ,  H01L21/321

Abstract: A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

公开(公告)号：DE69631258T2

公开(公告)日：2004-11-18

申请号：DE69631258

申请日：1996-10-11

Applicant: LAM RES CORP

Inventor： DELARIOS JOHN M ,  GARDNER G ,  RAVKIN MIKHAIL

IPC: A46B11/06 ,  B08B1/04 ,  B08B3/08 ,  H01L21/00 ,  H01L21/306 ,  H01L21/311

Abstract: In a method of cleaning a substrate, a solution is applied to the substrate through a brush which also scrubs the substrate. Alternatively, (i) the substrate is scrubbed with a brush, an HF soln. is applied to the substrate and the brush is rinsed; or (ii) the substrate is placed in a scrubber, a first scrubbing cycle is carried out at a first station where a first soln . is applied to the substrate through the brush, a second scrubbing cycle is carried out at a second station using a second soln. and second brush and the brush is rinsed. Also claimed is an appts. for carrying out the process. Pref. a PVA brush is used.

公开(公告)号：SG188880A1

公开(公告)日：2013-04-30

申请号：SG2013017629

申请日：2009-02-24

Applicant: LAM RES CORP

Inventor： YUN SEOKMIN ,  ZHU JI ,  DELARIOS JOHN M ,  WILCOXSON MARK

Abstract: METHOD OF DIELECTRIC FILM TREATMENTA method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.Figure 4