公开(公告)号：WO2015178754A1

公开(公告)日：2015-11-26

申请号：PCT/MY2015/000032

申请日：2015-05-13

Applicant: MIMOS BERHAD

Inventor： BIEN, Daniel Chia Sheng ,  LEE, Hing Wah ,  MD RAZIB, Nadia

IPC: G01N27/00

CPC classification number: G01N27/414

Abstract: The present invention relates to an ISFET integrated with a heating element, particularly a micro-heater, for gas sensing application. A method for fabricating the ISFET with the micro-heater is also disclosed in the present invention. By using the method of the present invention, the ISFET with the micro-heater has optimum performance and detection sensitivity to its environment changes, while reducing potential damage on the sensing membrane element. Furthermore, the configuration of the ISFET which includes at least two silicon substrates enables the fabrication of the ISFET device with the micro-heater to be more effective, leaves no air gap, and does not block the micro-heater and the sensing membrane element during detection. Thus, the sensing membrane element and the micro-heater are fully exposed the change of its environment.

Abstract translation: 本发明涉及与用于气体传感应用的加热元件，特别是微加热器集成的ISFET。 本发明还公开了一种用微加热器制造ISFET的方法。 通过使用本发明的方法，具有微加热器的ISFET具有对其环境变化的最佳性能和检测灵敏度，同时减少了对传感膜元件的潜在损害。 此外，包括至少两个硅衬底的ISFET的配置使得能够利用微加热器制造具有微加热器的ISFET器件更有效，不留空气隙，并且不会阻塞微加热器和感测膜元件 检测。 因此，感测膜元件和微加热器完全暴露其环境的变化。