公开(公告)号：US09573804B2

公开(公告)日：2017-02-21

申请号：US14361683

申请日：2012-12-21

Applicant: Micronit Microfluidics B.V.

Inventor： Ronny Van 'T Oever ,  Marko Theodoor Blom ,  Jeroen Haneveld ,  Johannes Oonk ,  Marinus Bernardus Olde Riekerink ,  Peter Tijssen ,  Hendrik Jan Hildebrand Tigelaar ,  Jean-Noël Fehr ,  Jean-Christophe Roulet ,  Amitava Gupta

IPC: B81C1/00 ,  H01L23/10 ,  H01L21/50 ,  B81C3/00 ,  C23F1/02

CPC classification number: B81C1/00269 ,  B81B2201/058 ,  B81C3/001 ,  B81C2201/0132 ,  B81C2203/0118 ,  B81C2203/019 ,  C23F1/02 ,  H01L21/50 ,  H01L23/10 ,  H01L2924/0002 ,  Y10T428/239 ,  H01L2924/00

Abstract: The invention relates to method for bonding at least two substrates, for example made from glass, silicon, ceramic, aluminum, or boron, by using an intermediate thin film metal layer for providing the bonding, said method comprising the following steps of: a) providing said two substrates; b) depositing said thin film metal layer on at least a part of a surface of a first substrate of the two substrates; c) bringing a surface of the second substrate into contact with said thin film metal layer on said surface of the first substrate such that a bonding between the second substrate and the thin film metal layer on the first substrate is provided; and d) at least locally strengthening the bonding between the second substrate and the thin film metal layer on the first substrate. The invention also relates to a device comprising two substrates, for example made from glass, silicon, ceramic, aluminum, or boron, and an intermediate thin film metal layer.

Abstract translation: 本发明涉及通过使用用于提供接合的中间薄膜金属层将至少两个基板（例如由玻璃，硅，陶瓷，铝或硼制成）接合的方法，所述方法包括以下步骤：a） 提供所述两个基板; b）将所述薄膜金属层沉积在所述两个基板的第一基板的表面的至少一部分上; c）使所述第二基板的表面与所述第一基板的所述表面上的所述薄膜金属层接触，从而提供所述第二基板和所述第一基板上的所述薄膜金属层之间的接合; 以及d）至少局部加强第一基板上的第二基板和薄膜金属层之间的接合。 本发明还涉及包括例如由玻璃，硅，陶瓷，铝或硼制成的两个基底和中间薄膜金属层的器件。

公开(公告)号：US20140335301A1

公开(公告)日：2014-11-13

申请号：US14361683

申请日：2012-12-21

Applicant: Micronit Microfluidics B.V.

Inventor： Ronny Van 'T Oever ,  Marko Theodoor Blom ,  Jeroen Haneveld ,  Johannes Oonk ,  Marinus Bernardus Olde Riekerink ,  Peter Tijssen ,  Hendrik Jan Hildebrand Tigelaar ,  Jean-Noël Fehr ,  Jean-Christophe Roulet ,  Amitava Gupta

IPC: B81C1/00 ,  C23F1/02

CPC classification number: B81C1/00269 ,  B81B2201/058 ,  B81C3/001 ,  B81C2201/0132 ,  B81C2203/0118 ,  B81C2203/019 ,  C23F1/02 ,  H01L21/50 ,  H01L23/10 ,  H01L2924/0002 ,  Y10T428/239 ,  H01L2924/00

Abstract: The invention relates to method for bonding at least two substrates, for example made from glass, silicon, ceramic, aluminum, or boron, by using an intermediate thin film metal layer for providing the bonding, said method comprising the following steps of: a) providing said two substrates; b) depositing said thin film metal layer on at least a part of a surface of a first substrate of the two substrates; c) bringing a surface of the second substrate into contact with said thin film metal layer on said surface of the first substrate such that a bonding between the second substrate and the thin film metal layer on the first substrate is provided; and d) at least locally strengthening the bonding between the second substrate and the thin film metal layer on the first substrate. The invention also relates to a device comprising two substrates, for example made from glass, silicon, ceramic, aluminum, or boron, and an intermediate thin film metal layer.

Abstract translation: 本发明涉及通过使用用于提供接合的中间薄膜金属层将至少两个基板（例如由玻璃，硅，陶瓷，铝或硼制成）接合的方法，所述方法包括以下步骤：a） 提供所述两个基板; b）将所述薄膜金属层沉积在所述两个基板的第一基板的表面的至少一部分上; c）使所述第二基板的表面与所述第一基板的所述表面上的所述薄膜金属层接触，从而提供所述第二基板和所述第一基板上的所述薄膜金属层之间的接合; 以及d）至少局部加强第一基板上的第二基板和薄膜金属层之间的接合。 本发明还涉及包括例如由玻璃，硅，陶瓷，铝或硼制成的两个基底和中间薄膜金属层的器件。