公开(公告)号：JP2002211923A

公开(公告)日：2002-07-31

申请号：JP2001000862

申请日：2001-01-05

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： IMAI MOTOHARU

IPC: C01G17/00 ,  C01B33/06 ,  C01F7/00 ,  C01G1/00 ,  C01G15/00 ,  C22C28/00 ,  H01L39/12

Abstract: PROBLEM TO BE SOLVED: To provide a silicon or germanium compound superconducting material which is expected to be a new material for manufacturing a high performance device and to provide a superconductor containing the material. SOLUTION: The silicon or germanium compound superconducting material is represented by the formula Ax(B1-yCy)2 (where 0.8 =3 K critical temperature.

公开(公告)号：JP2002329865A

公开(公告)日：2002-11-15

申请号：JP2002056484

申请日：2002-03-01

Applicant: NAT INST FOR MATERIALS SCIENCE ,  CHIKYO TOYOHIRO

Inventor： CHIKYO TOYOHIRO ,  IMAI MOTOHARU

IPC: H01L21/28 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide novel gate, CMOS structure and MOS structure exhibiting excellent low resistivity and controllability. SOLUTION: The gate is composed of an intermetallic compound semiconductor having a semiconductor band structure and an electric conductivity in the range of 10 and 10 S.m under a state added with no impurity.

公开(公告)号：EP1376702A4

公开(公告)日：2007-07-11

申请号：EP02705064

申请日：2002-03-01

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： CHIKYO TOYOHIRO ,  IMAI MOTOHARU

IPC: H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/49

CPC classification number: H01L21/28044 ,  H01L21/823828 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/4933

Abstract: A gate consisting of an intermetallic compound semiconductor having an electric conductivity of at least 10 S•m and up to 10 S•m with no impurities added and having a semiconductor band structure, and a CMOS structure and a MOS structure using the gate.