公开(公告)号：JP2006344982A

公开(公告)日：2006-12-21

申请号：JP2006171766

申请日：2006-06-21

Applicant: NAT INST FOR MATERIALS SCIENCE ,  FUJI ELECTRIC ADVANCED TECHNOL

Inventor： KOINUMA HIDEOMI ,  SONG JEONG-HWAN ,  CHIKYO TOYOHIRO ,  RYU EISO ,  AHMET PARHAT ,  KONISHI YOSHINORI ,  YONEZAWA YOSHIYUKI

IPC: H01L21/205 ,  H01L21/363 ,  H01L33/12 ,  H01L33/32 ,  H01L33/34

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming an epitaxial thin film of a metal sulfide directly on a substrate when a thin film element of a compound with ionic bond is formed on the substrate made of an Si monocrystal and is manufactured. SOLUTION: A formula 21 derived for a general purpose substrate for the first time is used for the substrate, and a formula 22 can be used for the epitaxial thin film. A sign 1 shows an Si (111) monocrystal substrate, a sign 2 shows an MnS layer (about 50 nm) formed on the monocrystal substrate 1, a sign 3 shows an AlN layer (about 1,000 nm) formed on the MnS layer 2, and a sign 4 shows a GaN layer (about 100 nm) formed on the AlN layer and functioning as a light emitting layer. COPYRIGHT: (C)2007,JPO&INPIT

公开(公告)号：JP2004006562A

公开(公告)日：2004-01-08

申请号：JP2002191447

申请日：2002-06-28

Applicant: NAT INST FOR MATERIALS SCIENCE ,  TOKYO INST TECH ,  FUJI ELECTRIC ADVANCED TECHNOL

Inventor： CHIKYO TOYOHIRO ,  RYU EISO ,  KOINUMA HIDEOMI ,  KAWASAKI MASASHI ,  KONISHI YOSHINORI ,  YONEZAWA YOSHIYUKI

IPC: H01L27/04 ,  H01L21/205 ,  H01L21/822 ,  H01L29/26 ,  H01L33/12 ,  H01L33/16 ,  H01L33/28 ,  H01L33/32 ,  H01L33/34 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a thin-film element that allows an ionic crystal to be subjected to epitaxial growth on an Si monocrystal substrate via an appropriate buffer layer, and to provide a manufacturing method of the thin-film element. SOLUTION: First, a ZnS layer 2 is subjected to epitaxial growth onto an Si monocrystal substrate 1, and ionic crystal thin films (n-GaN layer 3, GaN layer 4, and p-GaN layer 5) are formed on it. The ZnS thin film is an orientation film having improved crystallizability and also has an improved surface flatness. Once ZnS can be subjected to epitaxial growth onto the Si monocrystal substrate, the ion crystal thin films can be easily subjected to epitaxial growth successively. Therefore, by setting the ZnS to a buffer layer, Si and an ionic crystal having a difference in a lattice constant can easily form the epitaxial thin film with less lattice defects on the Si monocrystal substrate. The characteristics of a thin-film device utilizing it can be improved. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2002329865A

公开(公告)日：2002-11-15

申请号：JP2002056484

申请日：2002-03-01

Applicant: NAT INST FOR MATERIALS SCIENCE ,  CHIKYO TOYOHIRO

Inventor： CHIKYO TOYOHIRO ,  IMAI MOTOHARU

IPC: H01L21/28 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide novel gate, CMOS structure and MOS structure exhibiting excellent low resistivity and controllability. SOLUTION: The gate is composed of an intermetallic compound semiconductor having a semiconductor band structure and an electric conductivity in the range of 10 and 10 S.m under a state added with no impurity.

公开(公告)号：EP2740751A4

公开(公告)日：2015-01-21

申请号：EP12820585

申请日：2012-07-27

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： KAWAKITA JIN ,  CHIKYO TOYOHIRO

IPC: C08G61/12 ,  C08G73/00 ,  C08G73/02 ,  C08K3/00 ,  C08K3/08 ,  C08L65/00 ,  H01B1/02 ,  H01B1/12 ,  H01B13/00 ,  H01L51/00 ,  H01L51/30 ,  H05K1/09 ,  H05K3/10

CPC classification number: H01B1/124 ,  C08G61/124 ,  C08G61/126 ,  C08G73/0266 ,  C08G2261/3221 ,  C08G2261/3223 ,  C08K3/08 ,  C08K2003/0806 ,  C08K2201/011 ,  H01B1/127 ,  H01B1/128 ,  H01L51/0027 ,  H01L51/0036 ,  H01L51/0091 ,  H01L51/4213 ,  H05K1/092 ,  H05K3/106 ,  H05K2201/0329 ,  H05K2201/10143 ,  H05K2203/1157 ,  Y10T428/2927 ,  Y10T428/2958 ,  C08L65/00

Abstract: The invention has for its object to provide a process of producing a conducting material suitable for being filled in TSVs for LSI chip 3D package, etc. A solution containing a monomer that provides a conducting polymer, anions, and metal ions such as Ag + or Cu 2+ is irradiated with ultraviolet radiation or light having the energy necessary for exciting electrons up to an energy level capable of reducing the metal ions to precipitate a conducting polymer/metal composite. This enables an electrical conductor of high electrical conductivity to be precipitated faster than could be achieved by conventional processes.

公开(公告)号：EP1376702A4

公开(公告)日：2007-07-11

申请号：EP02705064

申请日：2002-03-01

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： CHIKYO TOYOHIRO ,  IMAI MOTOHARU

IPC: H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/49

CPC classification number: H01L21/28044 ,  H01L21/823828 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/4933

Abstract: A gate consisting of an intermetallic compound semiconductor having an electric conductivity of at least 10 S•m and up to 10 S•m with no impurities added and having a semiconductor band structure, and a CMOS structure and a MOS structure using the gate.

公开(公告)号：DE60045559D1

公开(公告)日：2011-03-03

申请号：DE60045559

申请日：2000-11-10

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： CHIKYO TOYOHIRO ,  YOSHIMOTO MAMORU

IPC: H01L21/316 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L29/51

公开(公告)号：EP3144964A4

公开(公告)日：2017-11-15

申请号：EP15792649

申请日：2015-05-14

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： KAWAKITA JIN ,  HORVATH BARBARA ,  CHIKYO TOYOHIRO

IPC: H01L21/3205 ,  C01B21/082 ,  C08G61/12 ,  C08K3/08 ,  C08L65/00 ,  H01L21/768 ,  H01L23/48 ,  H01L23/522 ,  H01L23/532 ,  H01L23/538 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H01L27/12 ,  H01L29/792 ,  H01Q9/27 ,  H01Q9/38

CPC classification number: H01L23/5384 ,  C01B21/0823 ,  C01P2006/40 ,  C08G61/124 ,  C08G2261/3221 ,  C08G2261/51 ,  C08K3/08 ,  C08K2003/0806 ,  C08L65/00 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/76846 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/522 ,  H01L23/532 ,  H01L23/5386 ,  H01L25/065 ,  H01L25/0657 ,  H01L25/07 ,  H01L25/18 ,  H01L27/12 ,  H01L28/00 ,  H01L29/792 ,  H01L2225/06544 ,  H01L2924/0002 ,  H01L2924/00

Abstract: By using silicon oxynitride with an oxygen content of 4.2 to 37.5 at% as a material for a barrier layer, adhesiveness similar to that of silicon oxide and an Ag diffusion prevention property similar to that of silicon nitride can be realized. In particular, in a semiconductor device in which a plurality of silicon chips is vertically stacked by through-silicon vias, Ag is prevented from being diffused into Si and adhesiveness to Si becomes favorable when an Ag/polypyrrole complex is used as a conductive filling material used for the formation of a barrier layer provided on the inner surface of the via.

公开(公告)号：EP3054351A4

公开(公告)日：2017-05-10

申请号：EP14847270

申请日：2014-09-25

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： KAWAKITA JIN ,  CHIKYO TOYOHIRO ,  NAKANE TAKAYUKI

IPC: G03F7/09 ,  G03F7/11 ,  H01L21/027

CPC classification number: G03F7/11 ,  G03F7/091 ,  G03F7/20 ,  G03F7/32 ,  H01L21/0274 ,  H01L21/0277 ,  H01L21/0278

Abstract: A resist film structure is provided, which allows a resist layer to have improved photosensitivity to EUV or electron beams without changing the photosensitivity of the resist material itself. A metal layer 1 with a thickness as small as a nanometer level is provided on a resist polymer layer 2 formed on a substrate 3. When the resist layer in this structure is exposed to light, the metal layer 1 produces a surface plasmon effect to enhance the irradiation to the resist film, so that the photosensitivity of the resist film is improved.

Abstract translation: 提供抗蚀剂膜结构，其允许抗蚀剂层具有改进的对EUV或电子束的光敏性，而不改变抗蚀剂材料本身的光敏性。 在形成于基板3上的抗蚀剂聚合物层2上设置厚度小至纳米级的金属层1.当该结构中的抗蚀剂层曝光时，金属层1产生表面等离子体激元效应以增强 对抗蚀剂膜的照射，使得抗蚀剂膜的光敏性提高。

公开(公告)号：EP2911159A4

公开(公告)日：2016-04-06

申请号：EP13848557

申请日：2013-10-21

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： KAWAKITA JIN ,  CHIKYO TOYOHIRO ,  HASHIMOTO YASUO ,  HORVATH BARBARA

IPC: H01B1/00 ,  B05D1/26 ,  B05D5/12 ,  B32B27/00 ,  C08G73/02 ,  C08K3/08 ,  C08L65/00 ,  C08L79/02 ,  C09D17/00 ,  C09D201/00 ,  C09J165/00 ,  H01B1/22 ,  H01B5/14 ,  H01L21/768

CPC classification number: H05K1/095 ,  C08G73/0266 ,  C08G2261/3221 ,  C08G2261/3223 ,  C08G2261/43 ,  C08G2261/964 ,  C08K3/08 ,  C08L65/00 ,  C08L79/02 ,  C09D17/00 ,  C09D201/00 ,  C09J7/02 ,  C09J7/20 ,  C09J165/00 ,  C09J2205/102 ,  C09J2465/00 ,  H01B1/22 ,  H01L21/76898 ,  H01L23/49883 ,  H05K1/097 ,  H05K3/4069 ,  H05K2201/032 ,  Y10T428/24339

Abstract: A conductive polymer-metal complex becomes to be adhered simply and strongly on the surface of a substrate such as PTFE. By subjecting a solution containing a monomer which provides a conductive polymer, an anion, and a metal ions such as Ag + , Cu 2+ , Cu + and the like to an irradiation with light having an energy required for exciting an electron to an energy level capable of reducing the metal ion, such as ultraviolet light, under an appropriated condition, thereby precipitating the conductive polymer-metal complex as being dispersed in the reaction liquid. By supplying this dispersion liquid onto various substrates, the complex microparticles in the dispersion liquid enter into and mate with the narrow holes on the surface of the substrate. As a result, the complex precipitate formed on the surface of the substrate and the substrate can be adhered strongly to each other.

公开(公告)号：EP2792717A4

公开(公告)日：2014-10-22

申请号：EP12856666

申请日：2012-12-13

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： SASAKI MICHIKO ,  GOTO MASAHIRO ,  KASAHARA AKIRA ,  CHIKYO TOYOHIRO ,  TOSA MASAHIRO

IPC: C08L101/00 ,  B82Y30/00 ,  B82Y40/00 ,  C08K3/00 ,  C08K5/00

CPC classification number: C08K3/22 ,  B82Y30/00 ,  B82Y40/00 ,  C08K3/013 ,  C08K5/0025 ,  C08K2003/2265 ,  C08K2003/2268 ,  C08K2201/01 ,  C08L2205/16 ,  Y10T428/298 ,  Y10T428/31938

Abstract: Provided is a polymer nanowire which contains nanoparticles so as to have new functionalities. A thin film 103 is formed on a substrate 101 and includes functional nanoparticles and polymers, and further includes a photosensitive pigment as required. The thin film 103 is irradiated with a pulsed laser. This causes a polymer nanowire 109 containing the functional nanoparticles to grow from a surface of the thin film 103.