公开(公告)号：EP2450308B1

公开(公告)日：2013-06-12

申请号：EP10190268.2

申请日：2010-11-05

Applicant: NXP B.V.

Inventor： Van Dal, Marcus Johannes Henricus ,  Humbert, Aurelie ,  Matthias, Merz ,  Ponomarev, Youri Victorovitch

IPC: B81B7/00

CPC classification number: B81B7/0012 ,  B81B2201/0214 ,  B81B2207/015 ,  B81C2201/016

公开(公告)号：EP2450308A1

公开(公告)日：2012-05-09

申请号：EP10190268.2

申请日：2010-11-05

Applicant: NXP B.V.

Inventor： Van Dal, Marcus Johannes Henricus ,  Humbert, Aurelie ,  Matthias, Merz ,  Ponomarev, Youri Victorovitch

IPC: B81B7/00

CPC classification number: B81B7/0012 ,  B81B2201/0214 ,  B81B2207/015 ,  B81C2201/016

Abstract: Disclosed is a method of manufacturing an integrated circuit having a substrate comprising a plurality of components and a metallization stack over said components, the metallization stack comprising a first sensing element (120) and a second sensing element (140) adjacent to the first sensing element, the method comprising depositing a moisture-impenetrable layer (150) over the metallization stack; depositing a passivation layer (510; 520) over the moisture-impenetrable layer; patterning the passivation layer and the underlying moisture-impenetrable layer such that a trench (600) is formed surrounding a region (810, 820) of the passivation layer over the first or second sensing element, the depth of said trench extending to a portion (310) of the metallization stack; depositing a layer of a further moisture-impenetrable material (700) over the resultant structure thereby filling said trench; patterning said further moisture-impenetrable material to expose a portion of the passivation layer in a region (810) above the first sensing element; and removing the exposed portion of the passivation layer to expose the first sensing element. A thus manufactured IC and article comprising such an IC are also disclosed.

Abstract translation: 本发明公开了制造具有基片，其包括组分的多元并在所述组件的金属化叠层集成电路的方法，所述金属化叠层包括第一感测元件（120）和第二感测元件（140）相邻的第一感测元件 中，该方法包括：在沉积在金属化堆叠中的水分难以渗透层（150）; 沉积钝化层（510; 520）在所述湿气不可透过的层; 图案化钝化层和底层水分不可渗过的层的搜索做了沟槽（600）形成在第一或第二感测元件围绕所述钝化层的区域（810，820），所述沟槽的深度延伸到部分（ 310）金属化叠层的; 沉积在得到的结构，从而填充所述沟槽的进一步湿气不可透过的材料（700）层; 所述图案化进一步水分不可渗过的材料，以在所述第一感测元件上方的区域（810）露出所述钝化层的一部分; 和去除钝化层的暴露部分，以暴露所述第一感测元件。 一个如此制造IC和物品，包括寻求IC这样的游离缺失盘。