Method of manufacturing IC having a moisture barrier, IC and apparatus
    2.
    发明公开
    Method of manufacturing IC having a moisture barrier, IC and apparatus 有权
    一种用于与湿气屏障制造集成电路过程中,和集成电路器件

    公开(公告)号:EP2450308A1

    公开(公告)日:2012-05-09

    申请号:EP10190268.2

    申请日:2010-11-05

    Applicant: NXP B.V.

    Abstract: Disclosed is a method of manufacturing an integrated circuit having a substrate comprising a plurality of components and a metallization stack over said components, the metallization stack comprising a first sensing element (120) and a second sensing element (140) adjacent to the first sensing element, the method comprising depositing a moisture-impenetrable layer (150) over the metallization stack; depositing a passivation layer (510; 520) over the moisture-impenetrable layer; patterning the passivation layer and the underlying moisture-impenetrable layer such that a trench (600) is formed surrounding a region (810, 820) of the passivation layer over the first or second sensing element, the depth of said trench extending to a portion (310) of the metallization stack; depositing a layer of a further moisture-impenetrable material (700) over the resultant structure thereby filling said trench; patterning said further moisture-impenetrable material to expose a portion of the passivation layer in a region (810) above the first sensing element; and removing the exposed portion of the passivation layer to expose the first sensing element. A thus manufactured IC and article comprising such an IC are also disclosed.

    Abstract translation: 本发明公开了制造具有基片,其包括组分的多元并在所述组件的金属化叠层集成电路的方法,所述金属化叠层包括第一感测元件(120)和第二感测元件(140)相邻的第一感测元件 中,该方法包括:在沉积在金属化堆叠中的水分难以渗透层(150); 沉积钝化层(510; 520)在所述湿气不可透过的层; 图案化钝化层和底层水分不可渗过的层的搜索做了沟槽(600)形成在第一或第二感测元件围绕所述钝化层的区域(810,820),所述沟槽的深度延伸到部分( 310)金属化叠层的; 沉积在得到的结构,从而填充所述沟槽的进一步湿气不可透过的材料(700)层; 所述图案化进一步水分不可渗过的材料,以在所述第一感测元件上方的区域(810)露出所述钝化层的一部分; 和去除钝化层的暴露部分,以暴露所述第一感测元件。 一个如此制造IC和物品,包括寻求IC这样的游离缺失盘。

Patent Agency Ranking