公开(公告)号：JP2010219535A

公开(公告)日：2010-09-30

申请号：JP2010058192

申请日：2010-03-15

Applicant: Saint-Gobain Ceramics & Plastics Inc ,  サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド

Inventor： NARENDAR YESHWANTH ,  BUCKLEY RICHARD F ,  HAERLE ANDREW G ,  HENGST RICHARD R

IPC: H01L21/22 ,  C01B31/36 ,  C04B35/565 ,  C04B35/622 ,  C04B41/45 ,  C04B41/80 ,  C23C16/42 ,  H01L21/02 ,  H01L21/205 ,  H01L21/265 ,  H01L21/324 ,  H01L21/673 ,  H01L21/683

CPC classification number: C04B41/459 ,  C01B32/956 ,  C01P2006/80 ,  C04B35/565 ,  C04B35/62222 ,  C04B41/009 ,  C04B41/80 ,  C04B2235/3826 ,  C04B2235/428 ,  C04B2235/72 ,  C04B2235/80 ,  C04B2235/963 ,  H01L21/6733 ,  Y10T428/12576 ,  Y10T428/26 ,  C04B41/4519 ,  C04B41/4556 ,  C04B41/5035

Abstract: PROBLEM TO BE SOLVED: To provide various semiconductor processing components, and a method for forming the same. SOLUTION: This semiconductor processing component is formed of SiC, and an outer surface portion of the semiconductor processing component has a surface impurity level that is not greater than 10 times an internal impurity level. This method for treating a semiconductor processing component includes exposing the semiconductor processing component to a halogen gas at an elevated temperature, oxidizing the semiconductor processing component to form an oxide layer, and removing the oxide layer. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供各种半导体处理部件及其形成方法。 解决方案：该半导体处理部件由SiC形成，并且半导体处理部件的外表面部分具有不大于内部杂质水平的10倍的表面杂质水平。 用于处理半导体处理部件的方法包括：将高温下的半导体处理部件暴露于卤素气体，氧化半导体处理部件，形成氧化物层，除去氧化物层。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：EP3218324A4

公开(公告)日：2018-04-11

申请号：EP15859967

申请日：2015-10-30

Applicant: SAINT GOBAIN CERAMICS&PLASTICS INC ,  SAINT GOBAIN CENTRE DE RECH ET DETUDES EUROPEEN

Inventor： LIN GUANGYONG ,  NARENDAR YESHWANTH ,  LACOURSE BRIAN C ,  ROBBINS WESLEY R ,  URFFER DANIEL RENE

IPC: C04B35/64 ,  C04B35/04 ,  C04B35/053 ,  C04B35/10 ,  C04B35/443 ,  C04B35/63 ,  H01M8/124 ,  H01M8/2483 ,  H01M8/2484

CPC classification number: C04B35/04 ,  C04B35/053 ,  C04B35/443 ,  C04B35/63 ,  C04B35/64 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3232 ,  C04B2235/3236 ,  C04B2235/5436 ,  C04B2235/5463 ,  C04B2235/602 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/9607 ,  C04B2235/9661 ,  H01M8/1246 ,  H01M8/2483 ,  H01M8/2484 ,  H01M8/2485 ,  H01M2008/1293

Abstract: A sintered ceramic component can have a final composition including at least 50 wt. % MgO and at least one desired dopant, wherein each dopant of the at least one desired dopant has a desired dopant content of at least 0.1 wt. %. All impurities (not including the desired dopant(s)) are present at a combined impurity content of less than 0.7 wt. %. A remainder can include Al2O3. The selection of dopants can allow for better control over the visual appearance of the sintered ceramic component, reduces the presence of undesired impurities that may adversely affect another part of an apparatus, or both. The addition of the dopant(s) can help to improve the sintering characteristics and density as compared to a sintered ceramic component that includes the material with no dopant and a relatively low impurity content.

公开(公告)号：EP2979319A4

公开(公告)日：2016-09-14

申请号：EP14773231

申请日：2014-03-28

Applicant: SAINT GOBAIN CERAMICS&PLASTICS INC

Inventor： REIS SIGNO TADEU ,  SCHWARTZ MATTHIEU ,  ZANDI MORTEZA ,  NARENDAR YESHWANTH

IPC: H01M8/02 ,  C03C10/00 ,  H01M8/12

CPC classification number: H01M8/0282 ,  C03C3/085 ,  C03C8/02 ,  C03C8/24 ,  C03C10/0009 ,  C03C10/0036 ,  C03C2204/00 ,  C03C2209/00 ,  C04B41/5023 ,  C04B41/86 ,  H01M8/0286 ,  H01M8/1016 ,  H01M8/2425 ,  H01M2008/1293 ,  H01M2300/0071 ,  Y10T428/26

Abstract: A glass-ceramic seal for ionic transport devices such as solid oxide fuel cell stacks or oxygen transport membrane applications. Preferred embodiments of the present invention comprise glass-ceramic sealant material based on a Barium-Aluminum-Silica system, which exhibits a high enough coefficient of thermal expansion to closely match the overall CTE of a SOFC cell/stack (preferably from about 11 to 12.8 ppm/° C.), good sintering behavior, and a very low residual glass phase (which contributes to the stability of the seal).