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    VERTICAL INTEGRATION OF CMOS ELECTRONICS WITH PHOTONIC DEVICES
    2.
    发明申请
    VERTICAL INTEGRATION OF CMOS ELECTRONICS WITH PHOTONIC DEVICES 审中-公开
    CMOS电子与光电器件的垂直集成

    公开(公告)号：WO2013109955A1

    公开(公告)日：2013-07-25

    申请号：PCT/US2013/022244

    申请日：2013-01-18

    Applicant: SKORPIOS TECHNOLOGIES, INC.

    Inventor： DALLESASSE, John ,  KRASULICK, Stephen B. ,  CREAZZO, Timothy ,  MARCHENA, Elton

    IPC: H01L27/14 ,  H01L27/12

    CPC classification number: H01L27/14689 ,  H01L21/76254 ,  H01L21/8221 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/12 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/15

    Abstract: A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure.

    Abstract translation: 制造复合半导体结构的方法包括提供包括多个硅基器件的SOI衬底，提供包括多个光子器件的化合物半导体衬底，以及切割化合物半导体衬底以提供多个光子管芯。 每个管芯包括多个光子器件中的一个或多个。 该方法还包括提供具有基底层和包括多个CMOS器件的器件层的组装衬底，将多个光子管芯安装在组装衬底的预定部分上，并且对准SOI衬底和组件衬底。 该方法还包括将SOI衬底和组件衬底接合以形成复合衬底结构，并从复合衬底结构去除组装衬底的至少基底层。

    METHOD AND SYSTEM FOR THE MONOLITHIC INTEGRATION OF CIRCUITS FOR MONITORING AND CONTROL OF RF SIGNALS
    5.
    发明申请
    METHOD AND SYSTEM FOR THE MONOLITHIC INTEGRATION OF CIRCUITS FOR MONITORING AND CONTROL OF RF SIGNALS 审中-公开
    用于监视和控制RF信号的电路的单片集成方法和系统

    公开(公告)号：WO2014025683A2

    公开(公告)日：2014-02-13

    申请号：PCT/US2013/053606

    申请日：2013-08-05

    Applicant: SKORPIOS TECHNOLOGIES, INC.

    Inventor： KRASULICK, Stephen B. ,  CREAZZO, Timothy ,  JHA, Kalpit ,  MARCHENA, Elton ,  MIZRAHI, Amit

    CPC classification number: H04B10/5561 ,  H04B10/07955 ,  H04B10/5053 ,  H04B10/564 ,  H04J14/0227 ,  H04L27/2096

    Abstract: A method of operating a BPSK modulator includes receiving an RF signal at the BPSK modulator and splitting the RF signal into a first portion and a second portion that is inverted with respect to the first portion. The method also includes receiving the first portion at a first arm of the BPSK modulator, receiving the second portion at a second arm of the BPSK modulator, applying a first tone to the first arm of the BPSK modulator, and applying a second tone to the second arm of the BPSK modulator. The method further includes measuring a power associated with an output of the BPSK modulator and adjusting a phase applied to at least one of the first arm of the BPSK modulator or the second arm of the BPSK modulator in response to the measured power.

    Abstract translation: 一种操作BPSK调制器的方法包括在BPSK调制器处接收RF信号，并将RF信号分成第一部分和相对于第一部分反相的第二部分。 该方法还包括在BPSK调制器的第一臂处接收第一部分，在BPSK调制器的第二臂处接收第二部分，向BPSK调制器的第一臂应用第一音调，并将第二音调应用于 BPSK调制器的第二臂。 该方法还包括测量与BPSK调制器的输出相关联的功率，并且响应于测量的功率调整施加到BPSK调制器的第一臂或BPSK调制器的第二臂中的至少一个的相位。

    HYBRID OPTICAL MODULATOR
    6.
    发明申请
    HYBRID OPTICAL MODULATOR 审中-公开
    混合光学调制器

    公开(公告)号：WO2013155378A1

    公开(公告)日：2013-10-17

    申请号：PCT/US2013/036313

    申请日：2013-04-12

    Applicant: SKORPIOS TECHNOLOGIES, INC.

    Inventor： SPANN, John Y. ,  VAN ORDEN, Derek ,  MIZRAHI, Amit ,  CREAZZO, Timothy ,  MARCHENA, Elton ,  STONE, Robert J. ,  KRASULICK, Stephen B.

    IPC: G02F1/01

    CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2202/102 ,  G02F2202/105 ,  H01L21/02538 ,  H01L29/20

    Abstract: An optical modulator includes an input port, a first waveguide region comprising silicon and optically coupled to the input port, and a waveguide splitter optically coupled to the first waveguide region and having a first output and a second output. The optical modulator also includes a first phase adjustment section optically coupled to the first output and comprising a first III-V diode and a second phase adjustment section optically coupled to the second output and comprising a second III-V diode. The optical modulator further includes a waveguide coupler optically coupled to the first phase adjustment section and the second phase adjustment section, a second waveguide region comprising silicon and optically coupled to the waveguide coupler, and an output port optically coupled to the second waveguide region.

    Abstract translation: 光调制器包括输入端口，包括硅并且光耦合到输入端口的第一波导区域，以及光耦合到第一波导区域并具有第一输出和第二输出的波导分路器。 光调制器还包括光耦合到第一输出并包括第一III-V二极管的第一相位调节部分和与第二输出光耦合并且包括第二III-V二极管的第二相位调整部分。 光调制器还包括光耦合到第一相位调整部分和第二相位调整部分的波导耦合器，包括硅并光耦合到波导耦合器的第二波导区域以及光耦合到第二波导区域的输出端口。

    VERTICAL INTEGRATION OF CMOS ELECTRONICS WITH PHOTONIC DEVICES
    9.
    发明公开
    VERTICAL INTEGRATION OF CMOS ELECTRONICS WITH PHOTONIC DEVICES 审中-公开
    VERTIKALE INTEGRATION VON CMOS-ELEKTRONIK MIT PHOTONISCHEN BAUELEMENTEN

    公开(公告)号：EP2805352A1

    公开(公告)日：2014-11-26

    申请号：EP13738701.5

    申请日：2013-01-18

    Applicant: Skorpios Technologies, Inc.

    Inventor： DALLESASSE, John ,  KRASULICK, Stephen B. ,  CREAZZO, Timothy ,  MARCHENA, Elton

    IPC: H01L27/14 ,  H01L27/12

    CPC classification number: H01L27/14689 ,  H01L21/76254 ,  H01L21/8221 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/12 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/15

    Abstract: A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure.

    Abstract translation: 制造复合半导体结构的方法包括提供包括多个硅基器件的SOI衬底，提供包括多个光子器件的化合物半导体衬底，以及切割化合物半导体衬底以提供多个光子管芯。 每个管芯包括多个光子器件中的一个或多个。 该方法还包括提供具有基底层和包括多个CMOS器件的器件层的组装衬底，将多个光子管芯安装在组装衬底的预定部分上，以及对准SOI衬底和组件衬底。 该方法还包括将SOI衬底和组件衬底接合以形成复合衬底结构，并从组合衬底结构去除组装衬底的至少基底层。

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