公开(公告)号：WO2014176561A1

公开(公告)日：2014-10-30

申请号：PCT/US2014/035563

申请日：2014-04-25

Applicant: SKORPIOS TECHNOLOGIES, INC.

Inventor： MARCHENA, Elton ,  SPANN, John Y. ,  CREAZZO, Timothy ,  KRASULICK, Stephen B. ,  MIZRAHI, Amit

IPC: H01L21/00

CPC classification number: H01L24/83 ,  G02B6/423 ,  G02B6/4238 ,  H01L23/13 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/29036 ,  H01L2224/29109 ,  H01L2224/8114 ,  H01L2224/8314 ,  H01L2224/83193 ,  H01L2224/83345 ,  H01L2924/12042 ,  H01L2924/01046 ,  H01L2924/00

Abstract: A method of fabricating a composite semiconductor structure is provided. Pedestals are formed in a recess of a first substrate. A second substrate is then placed within the recess in contact with the pedestals. The pedestals have a predetermined height so that a device layer within the second substrate aligns with a waveguide of the first substrate, where the waveguide extends from an inner wall of the recess.

Abstract translation: 提供一种制造复合半导体结构的方法。 基座形成在第一基板的凹部中。 然后将第二基板放置在与基座接触的凹部内。 基座具有预定的高度，使得第二基板内的装置层与第一基板的波导对准，其中波导从凹部的内壁延伸。

公开(公告)号：WO2017049277A1

公开(公告)日：2017-03-23

申请号：PCT/US2016/052453

申请日：2016-09-19

Applicant: SKORPIOS TECHNOLOGIES, INC.

Inventor： SPANN, John Y.

IPC: H01L29/12 ,  H01L21/768 ,  H01L21/8238

CPC classification number: H01S3/0637 ,  G02B6/12 ,  G02B2006/12121 ,  H01S5/0206 ,  H01S5/021 ,  H01S5/0217 ,  H01S5/0228 ,  H01S5/026 ,  H01S5/3434 ,  H01S2301/173

Abstract: A device for a gain medium for a semiconductor laser has an active region, a buffer layer, a substrate, and an etch stop between the buffer layer and the substrate. The device is bonded to a silicon platform having silicon devices, such as a waveguide and mirror. The substrate is removed, after bonding the device to the platform. The buffer layer is made of different material than the substrate to reduce undercut of the buffer layer during substrate removal compared to a buffer layer made of the same material as the substrate.

Abstract translation: 用于半导体激光器的增益介质的器件在缓冲层和衬底之间具有有源区，缓冲层，衬底和蚀刻停止。 该器件被结合到具有诸如波导和反射镜的硅器件的硅平台。 在将设备粘合到平台之后，去除衬底。 与衬底相同的材料制成的缓冲层相比，缓冲层由与衬底不同的材料制成，以减少衬底移除期间缓冲层的底切。

公开(公告)号：WO2015054491A1

公开(公告)日：2015-04-16

申请号：PCT/US2014/059900

申请日：2014-10-09

Applicant: SKORPIOS TECHNOLOGIES, INC.

Inventor： KRASULICK, Stephen B. ,  DALLESASSE, John ,  MIZRAHI, Amit ,  CREAZZO, Timothy ,  MARCHENA, Elton ,  SPANN, John Y.

IPC: H01L23/13 ,  H01L23/28

CPC classification number: H01L31/02327 ,  G02B6/423 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0217 ,  H01S5/0218 ,  H01S5/0224 ,  H01S5/02248 ,  H01S5/02252 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02469 ,  H01S5/026 ,  H01S5/3013 ,  H01S2301/176

Abstract: A composite device for splitting photonic functionality across two or more materials comprises a platform, a chip, and a bond securing the chip to the platform. The platform comprises a base layer and a device layer. The device layer comprises silicon and has an opening exposing a portion of the base layer. The chip, a III-V material, comprises an active region (e.g., gain medium for a laser). The chip is bonded to the portion of the base layer exposed by the opening such that the active region of the chip is aligned with the device layer of the platform. A coating hermitically seals the chip in the platform.

Abstract translation: 用于在两种或多种材料上分离光子功能的复合器件包括平台，芯片和将芯片固定到平台的接合。 平台包括基层和器件层。 器件层包括硅并且具有露出基底层的一部分的开口。 芯片III-V材料包括有源区（例如，用于激光的增益介质）。 芯片被接合到由开口暴露的基层的部分，使得芯片的有源区域与平台的器件层对准。 涂层在平台上密封芯片。

公开(公告)号：WO2013155378A1

公开(公告)日：2013-10-17

申请号：PCT/US2013/036313

申请日：2013-04-12

Applicant: SKORPIOS TECHNOLOGIES, INC.

Inventor： SPANN, John Y. ,  VAN ORDEN, Derek ,  MIZRAHI, Amit ,  CREAZZO, Timothy ,  MARCHENA, Elton ,  STONE, Robert J. ,  KRASULICK, Stephen B.

IPC: G02F1/01

CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2202/102 ,  G02F2202/105 ,  H01L21/02538 ,  H01L29/20

Abstract: An optical modulator includes an input port, a first waveguide region comprising silicon and optically coupled to the input port, and a waveguide splitter optically coupled to the first waveguide region and having a first output and a second output. The optical modulator also includes a first phase adjustment section optically coupled to the first output and comprising a first III-V diode and a second phase adjustment section optically coupled to the second output and comprising a second III-V diode. The optical modulator further includes a waveguide coupler optically coupled to the first phase adjustment section and the second phase adjustment section, a second waveguide region comprising silicon and optically coupled to the waveguide coupler, and an output port optically coupled to the second waveguide region.

Abstract translation: 光调制器包括输入端口，包括硅并且光耦合到输入端口的第一波导区域，以及光耦合到第一波导区域并具有第一输出和第二输出的波导分路器。 光调制器还包括光耦合到第一输出并包括第一III-V二极管的第一相位调节部分和与第二输出光耦合并且包括第二III-V二极管的第二相位调整部分。 光调制器还包括光耦合到第一相位调整部分和第二相位调整部分的波导耦合器，包括硅并光耦合到波导耦合器的第二波导区域以及光耦合到第二波导区域的输出端口。

公开(公告)号：EP3055879A1

公开(公告)日：2016-08-17

申请号：EP14851684.2

申请日：2014-10-09

Applicant: Skorpios Technologies, Inc.

Inventor： KRASULICK, Stephen B. ,  DALLESASSE, John ,  MIZRAHI, Amit ,  CREAZZO, Timothy ,  MARCHENA, Elton ,  SPANN, John Y.

IPC: H01L23/13 ,  H01L23/28

CPC classification number: H01L31/02327 ,  G02B6/423 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0217 ,  H01S5/0218 ,  H01S5/0224 ,  H01S5/02248 ,  H01S5/02252 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02469 ,  H01S5/026 ,  H01S5/3013 ,  H01S2301/176

Abstract: A method for fabricating a composite device comprises providing a platform, providing a chip, and bonding the chip to the platform. The platform has a base layer and a device layer above the base layer. An opening in the device layer exposes a portion of the base layer. The chip is bonded to the portion of the base layer exposed by the opening in the device layer. A portion of the chip extends above the platform and is removed.

Abstract translation: 一种制造复合器件的方法包括提供平台，提供芯片，以及将芯片粘合到平台上。 平台具有基层和基层之上的器件层。 设备层中的开口露出基层的一部分。 芯片通过器件层中的开口暴露在基底层的部分上。 芯片的一部分在平台上方延伸并被移除。