公开(公告)号：MY173459A

公开(公告)日：2020-01-26

申请号：MYPI2013701141

申请日：2011-12-30

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  ANBALAGAN PRANAV ,  SARASWAT VIVEK

IPC: B23K26/36 ,  H01L31/0216 ,  H01L31/04 ,  H01L31/18

Abstract: Various laser processing schemes are disclosed for producing various types of hetero junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

公开(公告)号：WO2012162276A2

公开(公告)日：2012-11-29

申请号：PCT/US2012038907

申请日：2012-05-21

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  ANBALAGAN PRANAV ,  DESHAZER HEATHER ,  SARASWAT VIVEK ,  KAPUR PAWAN

Inventor： MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  ANBALAGAN PRANAV ,  DESHAZER HEATHER ,  SARASWAT VIVEK ,  KAPUR PAWAN

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

Abstract: Various laser processing schemes are disclosed for producing various types of hetero-junction emitter and homo-junction emitter solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

Abstract translation: 公开了用于生产各种类型的异质结发射体和均联发射体太阳能电池的各种激光处理方案。 这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝的选择性发射极掺杂。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光处理方案。 公开了激光烧蚀技术，使基底硅基本上没有损坏。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或通过外延沉积工艺或其它切割技术（例如离子注入和加热）制造的晶体硅衬底，其是 平面或纹理/三维。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。

公开(公告)号：WO2012092537A3

公开(公告)日：2012-11-22

申请号：PCT/US2011068037

申请日：2011-12-30

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  ANBALAGAN PRANAV ,  SARASWAT VIVEK

Inventor： MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  ANBALAGAN PRANAV ,  SARASWAT VIVEK

IPC: H01L31/042 ,  B23K26/36 ,  H01L31/18

CPC classification number: H01L31/02363 ,  B23K26/0624 ,  B23K26/40 ,  B23K2203/50 ,  H01L21/268 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Various laser processing schemes are disclosed for producing various types of hetero- junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero- junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

Abstract translation: 公开了用于生产各种类型的异质结和同质结太阳能电池的各种激光处理方案。 这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝的选择性发射极掺杂。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光加工方案。 公开了激光烧蚀技术，使基底硅基本上没有损坏。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或经由外延沉积工艺或诸如离子注入和加热的其它切割技术制造的晶体硅衬底，其是 平面或纹理/三维。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。

公开(公告)号：EP2659518A4

公开(公告)日：2014-09-24

申请号：EP11853473

申请日：2011-12-30

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  ANBALAGAN PRANAV ,  SARASWAT VIVEK

IPC: H01L31/068 ,  B23K26/06 ,  B23K26/40 ,  H01L21/268 ,  H01L31/0236 ,  H01L31/18

CPC classification number: H01L31/02363 ,  B23K26/0624 ,  B23K26/40 ,  B23K2203/50 ,  H01L21/268 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521