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    High efficiency solar cell structures and manufacturing methods
    4.
    发明专利
    High efficiency solar cell structures and manufacturing methods 未知

    公开(公告)号：AU2013289151A1

    公开(公告)日：2014-11-13

    申请号：AU2013289151

    申请日：2013-04-02

    Applicant: SOLEXEL INC

    Inventor： KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  DUTTON DAVID ,  SEUTTER SEAN M ,  CALCATERRA ANTHONY ,  ASHJAEE JAY ,  YONEHARA TAKAO

    IPC: H01L31/04 ,  H01L31/18

    Abstract: According to one aspect of the disclosed subject matter, fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a light receiving front side surface and a backside surface for forming patterned emitter and base regions. A first electrically conductive metallization layer is patterned on the backside base and emitter regions. An electrically insulating layer is formed on the first electrically conductive metallization layer and a second electrically conductive metallization layer is formed on the electrically insulating layer. The second electrically conductive metallization layer is connected to the first electrically conductive metallization layer through conductive via plugs formed in the electrically insulating layer.

    LASER PROCESSING METHODS FOR PHOTOVOLTAIC SOLAR CELLS
    5.
    发明专利
    LASER PROCESSING METHODS FOR PHOTOVOLTAIC SOLAR CELLS 未知

    公开(公告)号：MY173459A

    公开(公告)日：2020-01-26

    申请号：MYPI2013701141

    申请日：2011-12-30

    Applicant: SOLEXEL INC

    Inventor： MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  ANBALAGAN PRANAV ,  SARASWAT VIVEK

    IPC: B23K26/36 ,  H01L31/0216 ,  H01L31/04 ,  H01L31/18

    Abstract: Various laser processing schemes are disclosed for producing various types of hetero junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

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