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公开(公告)号：EP1344392B1
公开(公告)日：2006-02-22
申请号：EP01271739
申请日：2001-12-18
Applicant: ST MICROELECTRONICS NV
Inventor： BENTHIEN STEPHAN
Abstract: The invention relates to an image sensor device consisting of a substrate which is especially developed using CMOS technology, and has an integrated semiconductor structure (ASIC) and an optically active thin layer structure which is arranged on the same and consists respectively of at least one layer of doped and undoped amorphous silicon. In the horizontal plane, spatially adjacent image elements (pixels) are respectively formed, said image elements respectively comprising an optoelectronic converter for converting incident light into an electrical current which is proportional to the incident light quantity, in addition to a charge-coupled memory which is associated with the optoelectronic converter. The charge state of said charge-coupled memory can be varied according to the incident light on the associated optoelectronic converter. The aim of the invention is to further develop one such image sensor device in such a way that image distortions resulting from the movement of objects can be avoided. To this end, the charge-coupled memory is a condenser (Cint) into which the photocurrent produced by the optoelectronic converter is integrated during a pre-determined period of measurement, and a switching means (Tstop) which can be controlled by a common control device is provided in each image element. Said switching means can be commonly controlled for all image elements of the image sensor device.
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公开(公告)号：DE50103926D1
公开(公告)日：2004-11-04
申请号：DE50103926
申请日：2001-12-18
Applicant: ST MICROELECTRONICS NV
Inventor： BENTHIEN STEPHAN
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公开(公告)号：DE50108998D1
公开(公告)日：2006-04-27
申请号：DE50108998
申请日：2001-12-18
Applicant: ST MICROELECTRONICS NV
Inventor： BENTHIEN STEPHAN
Abstract: The invention relates to an image sensor device comprising a substrate, formed in CMOS technology, in particular, with an integrated semiconductor structure (ASIC) and, arranged above that, an optically active thin-film structure comprising in each case at least one layer made of doped and undoped amorphous silicon, spatially adjacent pixels in each case being formed in the horizontal plane, which pixels each have an optoelectronic transducer for converting incident light into an electric current proportional to the incident quantity of light, and also a charge store assigned to the optoelectronic transducer, the charge state of which charge store can be varied in a manner dependent on the light incident on the assigned optoelectronic transducer. Taking this as a departure point, the invention is based on the object of further developing an image sensor device of the stated type to the effect of avoiding image distortions in the case of moving objects, which is achieved according to the invention by virtue of the fact that the charge store is a capacitor (C int ), in which the photocurrent output by the optoelectronic transducer can be integrated during a predetermined measurement duration, and that a switching means (T stop ) that can be driven by a common control device is provided in each pixel, which switching means can be driven jointly for all the pixels of the image sensor device.
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