公开(公告)号：FR2786338B1

公开(公告)日：2001-02-09

申请号：FR9814918

申请日：1998-11-24

Applicant: ST MICROELECTRONICS SA

Inventor： TEISSIER MAXIME ,  BOURGEOIS JEAN MARIE ,  RAVON JEAN MICHEL ,  BARDOUILLET MICHEL

IPC: H02M1/00 ,  H02M1/42 ,  H02M3/155 ,  H02M1/14

Abstract: The supply circuit comprises a rectifier bridge (1) that rectifies the supplies AC current. The supply circuit enables a continuous high voltage and low voltage supply (V1,V2) comprising a diode first isolated grill bipolar transistor and (D),second MOS transistor. Resistor (R) and Zener diode (Z) regulates the potential across the transistor units.

公开(公告)号：FR2786338A1

公开(公告)日：2000-05-26

申请号：FR9814918

申请日：1998-11-24

Applicant: ST MICROELECTRONICS SA

Inventor： TEISSIER MAXIME ,  BOURGEOIS JEAN MARIE ,  RAVON JEAN MICHEL ,  BARDOUILLET MICHEL

IPC: H02M1/00 ,  H02M1/42 ,  H02M3/155 ,  H02M1/14

Abstract: The supply circuit comprises a rectifier bridge (1) that rectifies the supplies AC current. The supply circuit enables a continuous high voltage and low voltage supply (V1,V2) comprising a diode first isolated grill bipolar transistor and (D),second MOS transistor. Resistor (R) and Zener diode (Z) regulates the potential across the transistor units.