公开(公告)号：EP0154072A3

公开(公告)日：1986-07-23

申请号：EP84304412

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Gersten, Susan Wendy ,  Kuck, Mark Allen

IPC: C01B25/027

CPC classification number: C01B25/02

Abstract: A process for the production of high purity phosphorus characterised in that it comprises:
(A) heating high purity red phosphorus in vacuo to cause it to vaporize; and (B) condensing liquid white phosphorus in vacuo is disclosed. Referring to the accompanying illustrative diagram, red phosphorus may be heated in bulb A and condensed in collective bulb G. The present invention provides advances over the prior art. For example, the clear, colourless phosphorus produced may be utilized as a source of P 4 species for chemical vapour deposition, sputtering, vacuum deposition and molecular beam deposition of phosphorus, polyphosphide and other phosphorus compound films for semiconductor and other applications including insulation and passivation.

公开(公告)号：EP0152669A3

公开(公告)日：1986-06-11

申请号：EP84304413

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Gersten, Susan Wendy ,  Kuck, Mark Allen

IPC: C23C16/44 ,  C23C14/34 ,  C23C14/24

CPC classification number: C23C14/0021 ,  C23C16/4481

Abstract: @ A film deposition apparatus characterised in that it comprises:
(A) a reservoir for containing pnictide; (B) means for passing an inert gas therethrough; (C) a film desposition reaction chamber; and (D) means for supplying inert gas carrying vapour species after passing through the said pnictide to the said reaction chamber. A process for the supply of a pnictide vapour species to a film deposition process characterised in that it comprises passing an inert gas through a reservoir of heated pnictide. Referring to the accompanying illustrative diagram, there may be identified reservoir (30), means (B) may comprise tube (28), a chamber (C) is indicated at (22) and means (D) may comprise tube (60). Such a pnictide bubbler feed system may be used to supply Pnictide, species for various film deposition processes, including chemical vapour deposition, sputtering, vacuum deposition and molecular beam epitazy. Films of pnictide, polypnictide and other pnictide compounds may be deposited for semiconductor and other applications including insulation and passivation. The pnictides used may include phosphorus, arsenic and antimony. The present invention represents an advance over the prior art.

公开(公告)号：EP0152668A2

公开(公告)日：1985-08-28

申请号：EP84304411.6

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Baumann, John Andrew ,  Gersten, Susan Wendy ,  Kuck, Mark Allen ,  Raccah, Paul Mordecai

IPC: C23C16/44

CPC classification number: C23C16/4481 ,  C23C16/452

Abstract: A film deposition apparatus characterised in that it comprises:

(A) a reservoir containing heated pnictide;
(B) means for passing an inert gas therethrough;
(C) a high vacuum film deposition chamber; and
(D) means for supplying the said inert gas carrying the said pnictide as a vapour species after passing through the said pnictide to the said deposition chamber is disclosed.

A high vacuum deposition process characterised in that it comprises passing an inert gas through heated pnictide and supplying the product gas to a vacuum chamber maintained at a pressure below 10- 3 Torr (1.33 x 10 -1 Pa) is also disclosed.
Referring to the accompanying Illustrative diagram, the present apparatus may comprise reservoir (30), means for passing inert gas therethrough (28), deposition chamber (22) and supply means (60).
Films of pnictide, polypnictide and other pnictide compounds may be deposited for semiconductor and other applications including insulation and passivation, particularly on III-V semiconductors.
The present invention represents an advance over the prior art.

Abstract translation: 一种薄膜沉积设备DASS它包括：（A）的贮存器含有加热pnictides; （b）用于通过惰性气体存在的通过; （C）在高真空成膜室; 和（D）用于通过所述Pnictides所述传递到沉积室游离缺失盘之后供应携带说Pnictides作为蒸气物种的所述惰性气体。 的高真空沉积工艺DASS它包括惰性气体穿过加热Pnictides并供给产品气至低于10保持在压力的真空室< - > <3>托（1点33×10 < - > <1>帕 ）IST游离缺失盘。 参照附图说明图，本发明的装置可包括贮存器（30）用于使惰性气体通过存在（28），沉积腔室（22）和供给装置（60）。 Pnictides，polypnictide等Pnictides化合物的膜可以被沉积用于半导体和其他应用中，包括绝缘和钝化作用，特别是在III-V半导体。 本发明darstellt前进超过现有技术。

公开(公告)号：EP0130803A3

公开(公告)日：1986-06-11

申请号：EP84304410

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Baumann, John Andrew ,  Brock, David Geoffrey ,  Kuck, Mark Allen ,  Miller, Gary Kauilani

IPC: C23C14/14 ,  C23C14/24 ,  C01B31/00

CPC classification number: C23C14/14 ,  C23C14/24

Abstract: A vapour deposition process characterised in that an alkali metal intercalate is used as a source of alkali metal vapour is disclosed. The use of an alkali metal intercalate as a source of alkali metal vapour in a vapour deposition process is also disclosed, as in a source of alkali metal vapour for use in a vapour deposition process comprising an alkali metal intercalate. For example, a potassium graphite intercalate, KC 8 , may be heated to give a slow controlled release of potassium vapour for subsequent reaction with phosphorus vapour. Thin films of KP 15 and other polyphosphides may be produced by two-source vapour transport and by vacuum co-evaporation utilising KC 8 as the source of potassium vapour. RbC 8 and CsC 8 may be utilized as vapour sources to form the corresponding rubidium and cesium polyphosphides. The present invention represents an advance over the prior art.

Abstract translation: 一种气相沉积方法，其特征在于使用碱金属嵌入物作为碱金属蒸气源。 还公开了在气相沉积工艺中使用碱金属嵌层作为碱金属蒸气源，如在用于包含碱金属插层的气相沉积方法的碱金属蒸气源中。 例如，可以加热钾石墨插层物KC8，以缓慢控制钾蒸气，以便随后与磷蒸气反应。 KP15和其他聚磷酸盐的薄膜可以通过双源蒸气输送和利用KC8作为钾蒸汽源的真空共蒸发来生产。 可以使用RbC8和CsC8作为蒸气源形成相应的铷和铯多磷化物。 本发明代表了现有技术的进步。

公开(公告)号：EP0152669A2

公开(公告)日：1985-08-28

申请号：EP84304413.2

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Gersten, Susan Wendy ,  Kuck, Mark Allen

IPC: C23C16/44 ,  C23C14/34 ,  C23C14/24

CPC classification number: C23C14/0021 ,  C23C16/4481

Abstract: @ A film deposition apparatus characterised in that it comprises:

(A) a reservoir for containing pnictide;
(B) means for passing an inert gas therethrough;
(C) a film desposition reaction chamber; and
(D) means for supplying inert gas carrying vapour species after passing through the said pnictide to the said reaction chamber.

A process for the supply of a pnictide vapour species to a film deposition process characterised in that it comprises passing an inert gas through a reservoir of heated pnictide.
Referring to the accompanying illustrative diagram, there may be identified reservoir (30), means (B) may comprise tube (28), a chamber (C) is indicated at (22) and means (D) may comprise tube (60).
Such a pnictide bubbler feed system may be used to supply Pnictide, species for various film deposition processes, including chemical vapour deposition, sputtering, vacuum deposition and molecular beam epitazy. Films of pnictide, polypnictide and other pnictide compounds may be deposited for semiconductor and other applications including insulation and passivation. The pnictides used may include phosphorus, arsenic and antimony.
The present invention represents an advance over the prior art.

Abstract translation: 一种薄膜沉积设备DASS它包括：（a）用于容纳Pnictides的贮存器; （b）用于通过惰性气体存在的通过; （C）一个薄膜desposition反应室; 和（D）装置，用于提供携带蒸气物质通过Pnictides所述传递到所述反应室之后的惰性气体。 一种用于Pnictides蒸气物质的供给到DASS它通过加热Pnictides的贮存器包括惰性气体的通过的膜沉积工艺过程。 参照附图说明图，有可能被识别贮存器（30）的装置，（B）可包括管（28），腔室（C）在（22）的装置（D）被指示可以包括管（60）。 这种Pnictides鼓泡进料系统可被用来提供Pnictide4物种关于​​各种膜沉积工艺，包括化学气相沉积，溅射，真空沉积和分子束epitazy。 Pnictides，polypnictide等Pnictides化合物的膜可以被沉积用于半导体和其他应用中，包括绝缘和钝化作用。 所使用的pnictides可包括磷，砷和锑。 本发明darstellt前进优于现有技术的

公开(公告)号：EP0152668A3

公开(公告)日：1986-06-25

申请号：EP84304411

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Baumann, John Andrew ,  Gersten, Susan Wendy ,  Kuck, Mark Allen ,  Raccah, Paul Mordecai

IPC: C23C16/44

CPC classification number: C23C16/4481 ,  C23C16/452

Abstract: A film deposition apparatus characterised in that it comprises:
(A) a reservoir containing heated pnictide; (B) means for passing an inert gas therethrough; (C) a high vacuum film deposition chamber; and (D) means for supplying the said inert gas carrying the said pnictide as a vapour species after passing through the said pnictide to the said deposition chamber is disclosed. A high vacuum deposition process characterised in that it comprises passing an inert gas through heated pnictide and supplying the product gas to a vacuum chamber maintained at a pressure below 10- 3 Torr (1.33 x 10 -1 Pa) is also disclosed. Referring to the accompanying Illustrative diagram, the present apparatus may comprise reservoir (30), means for passing inert gas therethrough (28), deposition chamber (22) and supply means (60). Films of pnictide, polypnictide and other pnictide compounds may be deposited for semiconductor and other applications including insulation and passivation, particularly on III-V semiconductors. The present invention represents an advance over the prior art.

公开(公告)号：EP0154072A2

公开(公告)日：1985-09-11

申请号：EP84304412.4

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Gersten, Susan Wendy ,  Kuck, Mark Allen

IPC: C01B25/027

CPC classification number: C01B25/02

Abstract: A process for the production of high purity phosphorus characterised in that it comprises:

(A) heating high purity red phosphorus in vacuo to cause it to vaporize; and
(B) condensing liquid white phosphorus in vacuo is disclosed.

Referring to the accompanying illustrative diagram, red phosphorus may be heated in bulb A and condensed in collective bulb G.
The present invention provides advances over the prior art. For example, the clear, colourless phosphorus produced may be utilized as a source of P 4 species for chemical vapour deposition, sputtering, vacuum deposition and molecular beam deposition of phosphorus, polyphosphide and other phosphorus compound films for semiconductor and other applications including insulation and passivation.

Abstract translation: 一种生产高纯度磷的方法，其特征在于它包括：（A）真空加热高纯度的红磷使其蒸发; 和（B）在真空中浓缩液体白磷。 参考所附的说明图，红磷可以在灯泡A中加热并在集体灯泡G中冷凝。本发明提供了先有技术的进步。 例如，所生产的透明无色磷可用作用于化学气相沉积，溅射，真空沉积和用于半导体和其他应用的磷，聚磷化合物和其它磷化合物膜的分子束沉积的P4物质的来源，包括绝缘和钝化。

公开(公告)号：EP0130803A2

公开(公告)日：1985-01-09

申请号：EP84304410.8

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Baumann, John Andrew ,  Brock, David Geoffrey ,  Kuck, Mark Allen ,  Miller, Gary Kauilani

IPC: C23C14/14

CPC classification number: C23C14/14 ,  C23C14/24

Abstract: A vapour deposition process characterised in that an alkali metal intercalate is used as a source of alkali metal vapour is disclosed.
The use of an alkali metal intercalate as a source of alkali metal vapour in a vapour deposition process is also disclosed, as in a source of alkali metal vapour for use in a vapour deposition process comprising an alkali metal intercalate.
For example, a potassium graphite intercalate, KC 8 , may be heated to give a slow controlled release of potassium vapour for subsequent reaction with phosphorus vapour. Thin films of KP 15 and other polyphosphides may be produced by two-source vapour transport and by vacuum co-evaporation utilising KC 8 as the source of potassium vapour. RbC 8 and CsC 8 may be utilized as vapour sources to form the corresponding rubidium and cesium polyphosphides.
The present invention represents an advance over the prior art.

Abstract translation: 一种气相沉积方法，其特征在于使用碱金属嵌入物作为碱金属蒸气源。 还公开了在气相沉积工艺中使用碱金属嵌层作为碱金属蒸气源，如在用于包含碱金属插层的气相沉积方法的碱金属蒸气源中。 例如，可以加热钾石墨插层物KC8，以缓慢控制钾蒸气，以便随后与磷蒸气反应。 KP15和其他聚磷酸盐的薄膜可以通过双源蒸气输送和利用KC8作为钾蒸汽源的真空共蒸发来生产。 可以使用RbC8和CsC8作为蒸气源形成相应的铷和铯多磷化物。 本发明代表了现有技术的进步。