公开(公告)号：EP0132954A2

公开(公告)日：1985-02-13

申请号：EP84304408.2

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Baumann, John Andrew ,  Marek, Henry Samuel ,  Michel, Christian Gabriel

IPC: C30B29/10 ,  C30B11/02

CPC classification number: C30B11/00 ,  C03C17/22 ,  C03C2217/28 ,  C03C2217/283 ,  C03C2217/29 ,  C03C2218/15 ,  C30B19/00 ,  C30B29/10 ,  C30B29/62 ,  H01L51/0508 ,  H01L51/0512

Abstract: @ A process for the production of polyphosphide crystals characterised in that it comprises liquid phase growth of polyphosphide crystals from a polyphosphide melt.
More particularly, the process may comprise

(A) heating a polyphosphide charge to a melt having a temperature substantially within the range of from 650 to 670°.C; and
(B) slowly cooling the melt to form polyphosphide crystals.

Referring to the accompanying illustrative diagram, the present process may be applied to the growth of crystals of melt 22 on substrates 24 by tilting a sealed ampule 20.
The present invention represents an advance over the prior art.

Abstract translation: 一种生产多磷化物晶体的方法，其特征在于它包括来自多磷化物熔体的多磷化物晶体的液相生长。 更具体地，该方法可以包括（A）将聚磷化物加料加热到温度基本上在650-670℃的熔体中; 和（B）缓慢冷却熔体形成聚磷化物晶体。 参考所附的说明图，本方法可以应用于通过倾斜密封的安瓿20在基底24上生长熔体22的晶体。本发明代表了现有技术的进步。

公开(公告)号：EP0132326A3

公开(公告)日：1986-11-26

申请号：EP84304427

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Baumann, John Andrew ,  Raccah, Paul Mordecai ,  Serreze, Harvey Bruce ,  Olego, Diego Jose ,  Schachter, Rozalie ,  Spicer, William Edward ,  Brock, David Geoffrey

IPC: H01L21/314

CPC classification number: H01L21/314 ,  H01L23/291 ,  H01L23/3171 ,  H01L51/0508 ,  H01L51/0512 ,  H01L2924/0002 ,  H01L2924/13063 ,  H01L2924/00

Abstract: A semiconductor characterised in that it has a pnictide-rich layer on a surface thereof is disclosed, as is the production thereof. A new form of pnictide characterized in that it comprises a layer of amorphous pnictide-rich material having a layer-like local order. The accompanying illustration shows a comparison of Raman spectra from which it may be concluded that the local order of the present fibres is the amorphous counterpart of the puckered layer-like, sheet-like crystalline structure of black phosphorus. In general terms, pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms (4x 10- 6 cms) thick and grown preferably by molecular beam deposition, although other processes, such as vacuum evaporation, sputtering, chemical vapour deposition and deposition from a liquid melt, may be used. The layers may be grown on the , and surface of III-V crystals. The pnictide layer reduces the density of surface states and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity. The layers may be utilized in MIS and Metal-semiconductor (Schottky) devices, for example, to insulate and passivate MISFETS, to passivate MESFETS, to reduce the surface current component of the reverse bias dark current in P-I-N and avalanche diodes and to improve performance of opto-electronic devices, such as light-emitting diodes, lasers, solar cells, photo-cathodes and photo-detectors. The pnictide layer may be applied to intermetallic and compound semiconductors having a pnictide component. The pnictides may be phosphorus, arsenic, antimony or bismuth, or combinations thereof. The present invention represents an advance over the prior art.

公开(公告)号：EP0130803A3

公开(公告)日：1986-06-11

申请号：EP84304410

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Baumann, John Andrew ,  Brock, David Geoffrey ,  Kuck, Mark Allen ,  Miller, Gary Kauilani

IPC: C23C14/14 ,  C23C14/24 ,  C01B31/00

CPC classification number: C23C14/14 ,  C23C14/24

Abstract: A vapour deposition process characterised in that an alkali metal intercalate is used as a source of alkali metal vapour is disclosed. The use of an alkali metal intercalate as a source of alkali metal vapour in a vapour deposition process is also disclosed, as in a source of alkali metal vapour for use in a vapour deposition process comprising an alkali metal intercalate. For example, a potassium graphite intercalate, KC 8 , may be heated to give a slow controlled release of potassium vapour for subsequent reaction with phosphorus vapour. Thin films of KP 15 and other polyphosphides may be produced by two-source vapour transport and by vacuum co-evaporation utilising KC 8 as the source of potassium vapour. RbC 8 and CsC 8 may be utilized as vapour sources to form the corresponding rubidium and cesium polyphosphides. The present invention represents an advance over the prior art.

Abstract translation: 一种气相沉积方法，其特征在于使用碱金属嵌入物作为碱金属蒸气源。 还公开了在气相沉积工艺中使用碱金属嵌层作为碱金属蒸气源，如在用于包含碱金属插层的气相沉积方法的碱金属蒸气源中。 例如，可以加热钾石墨插层物KC8，以缓慢控制钾蒸气，以便随后与磷蒸气反应。 KP15和其他聚磷酸盐的薄膜可以通过双源蒸气输送和利用KC8作为钾蒸汽源的真空共蒸发来生产。 可以使用RbC8和CsC8作为蒸气源形成相应的铷和铯多磷化物。 本发明代表了现有技术的进步。

公开(公告)号：EP0132322A2

公开(公告)日：1985-01-30

申请号：EP84304406.6

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Baumann, John Andrew ,  Brock, David Geoffrey

IPC: C23C14/06 ,  C23C14/24

CPC classification number: C23C14/06 ,  C23C14/24 ,  H01L51/0508 ,  H01L51/0512

Abstract: An apparatus for forming an evaporated pnictide-containing film on a substrate characterised in that it comprises a cracker adjacent to the substrate is disclosed.
A process for the production of an evaporated pnictide-containing film on a substrate characterised in that it comprises deposition thereof using a cracker is also disclosed.
Referring to the accompanying illustrative drawing, the present apparatus may comprise a cracker 34 adjacent to a substrate 28.
The present invention represents an advance over the prior art.

Abstract translation: 公开了一种用于在基材上形成含蒸气的含有膜的膜的装置，其特征在于，其包括与该基板相邻的裂化器。 一种用于在基材上生产含蒸气含有膜的膜的方法，其特征在于其包括使用裂化器的沉积。 参考附图，本装置可包括与基片28相邻的裂纹器34。本发明代表了先有技术的进步。

公开(公告)号：EP0132322A3

公开(公告)日：1986-06-11

申请号：EP84304406

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Baumann, John Andrew ,  Brock, David Geoffrey

IPC: C23C14/06 ,  C23C14/24

CPC classification number: C23C14/06 ,  C23C14/24 ,  H01L51/0508 ,  H01L51/0512

Abstract: An apparatus for forming an evaporated pnictide-containing film on a substrate characterised in that it comprises a cracker adjacent to the substrate is disclosed. A process for the production of an evaporated pnictide-containing film on a substrate characterised in that it comprises deposition thereof using a cracker is also disclosed. Referring to the accompanying illustrative drawing, the present apparatus may comprise a cracker 34 adjacent to a substrate 28. The present invention represents an advance over the prior art.

公开(公告)号：EP0153525A1

公开(公告)日：1985-09-04

申请号：EP84304407.4

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Baumann, John Andrew ,  Parry, Robert Walter ,  Schachter, Rozalie

IPC: B01D8/00 ,  B01J19/00 ,  F25J3/08

CPC classification number: B01D8/00 ,  B01J2219/0894

Abstract: A vacuum system trap characterised in that it comprises:

(A) cracking means; and
(B) cold walls adjacent thereto is disclosed.

A process for the removal of deleterious gas(es) from a vacuum chamber or line characterised in that it comprises cracking the gas(es) to a form having a higher sticking coefficient and condensing such gas(es) on a cold surface using such a trap is also disclosed.
Referring to the accompanying illustrative diagram, the present trap may comprise cracking means heated filament 22 and cold walls 26.
The present invention represents an advance over the prior art.

Abstract translation: 一种真空系统捕集阱，其特征在于它包括：（A）裂解装置; 和（B）相邻的冷壁。 ...从真空室或管线去除有害气体的方法，其特征在于，其包括将气体裂化成具有较高粘附系数的形式并将这种气体冷凝在 还公开了使用这种陷阱的冷表面。 参考附图，本捕集器可以包括加热的细丝22和冷壁26的破裂装置。本发明代表了现有技术的进步。

公开(公告)号：EP0152668A2

公开(公告)日：1985-08-28

申请号：EP84304411.6

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Baumann, John Andrew ,  Gersten, Susan Wendy ,  Kuck, Mark Allen ,  Raccah, Paul Mordecai

IPC: C23C16/44

CPC classification number: C23C16/4481 ,  C23C16/452

Abstract: A film deposition apparatus characterised in that it comprises:

(A) a reservoir containing heated pnictide;
(B) means for passing an inert gas therethrough;
(C) a high vacuum film deposition chamber; and
(D) means for supplying the said inert gas carrying the said pnictide as a vapour species after passing through the said pnictide to the said deposition chamber is disclosed.

A high vacuum deposition process characterised in that it comprises passing an inert gas through heated pnictide and supplying the product gas to a vacuum chamber maintained at a pressure below 10- 3 Torr (1.33 x 10 -1 Pa) is also disclosed.
Referring to the accompanying Illustrative diagram, the present apparatus may comprise reservoir (30), means for passing inert gas therethrough (28), deposition chamber (22) and supply means (60).
Films of pnictide, polypnictide and other pnictide compounds may be deposited for semiconductor and other applications including insulation and passivation, particularly on III-V semiconductors.
The present invention represents an advance over the prior art.

Abstract translation: 一种薄膜沉积设备DASS它包括：（A）的贮存器含有加热pnictides; （b）用于通过惰性气体存在的通过; （C）在高真空成膜室; 和（D）用于通过所述Pnictides所述传递到沉积室游离缺失盘之后供应携带说Pnictides作为蒸气物种的所述惰性气体。 的高真空沉积工艺DASS它包括惰性气体穿过加热Pnictides并供给产品气至低于10保持在压力的真空室< - > <3>托（1点33×10 < - > <1>帕 ）IST游离缺失盘。 参照附图说明图，本发明的装置可包括贮存器（30）用于使惰性气体通过存在（28），沉积腔室（22）和供给装置（60）。 Pnictides，polypnictide等Pnictides化合物的膜可以被沉积用于半导体和其他应用中，包括绝缘和钝化作用，特别是在III-V半导体。 本发明darstellt前进超过现有技术。

公开(公告)号：EP0152668A3

公开(公告)日：1986-06-25

申请号：EP84304411

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Baumann, John Andrew ,  Gersten, Susan Wendy ,  Kuck, Mark Allen ,  Raccah, Paul Mordecai

IPC: C23C16/44

CPC classification number: C23C16/4481 ,  C23C16/452

Abstract: A film deposition apparatus characterised in that it comprises:
(A) a reservoir containing heated pnictide; (B) means for passing an inert gas therethrough; (C) a high vacuum film deposition chamber; and (D) means for supplying the said inert gas carrying the said pnictide as a vapour species after passing through the said pnictide to the said deposition chamber is disclosed. A high vacuum deposition process characterised in that it comprises passing an inert gas through heated pnictide and supplying the product gas to a vacuum chamber maintained at a pressure below 10- 3 Torr (1.33 x 10 -1 Pa) is also disclosed. Referring to the accompanying Illustrative diagram, the present apparatus may comprise reservoir (30), means for passing inert gas therethrough (28), deposition chamber (22) and supply means (60). Films of pnictide, polypnictide and other pnictide compounds may be deposited for semiconductor and other applications including insulation and passivation, particularly on III-V semiconductors. The present invention represents an advance over the prior art.

公开(公告)号：EP0132326A2

公开(公告)日：1985-01-30

申请号：EP84304427.2

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Baumann, John Andrew ,  Raccah, Paul Mordecai ,  Serreze, Harvey Bruce ,  Olego, Diego Jose ,  Schachter, Rozalie ,  Spicer, William Edward ,  Brock, David Geoffrey

IPC: H01L21/314

CPC classification number: H01L21/314 ,  H01L23/291 ,  H01L23/3171 ,  H01L51/0508 ,  H01L51/0512 ,  H01L2924/0002 ,  H01L2924/13063 ,  H01L2924/00

Abstract: A semiconductor characterised in that it has a pnictide-rich layer on a surface thereof is disclosed, as is the production thereof.
A new form of pnictide characterized in that it comprises a layer of amorphous pnictide-rich material having a layer-like local order.
The accompanying illustration shows a comparison of Raman spectra from which it may be concluded that the local order of the present fibres is the amorphous counterpart of the puckered layer-like, sheet-like crystalline structure of black phosphorus.
In general terms, pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms (4x 10- 6 cms) thick and grown preferably by molecular beam deposition, although other processes, such as vacuum evaporation, sputtering, chemical vapour deposition and deposition from a liquid melt, may be used. The layers may be grown on the , and surface of III-V crystals. The pnictide layer reduces the density of surface states and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity. The layers may be utilized in MIS and Metal-semiconductor (Schottky) devices, for example, to insulate and passivate MISFETS, to passivate MESFETS, to reduce the surface current component of the reverse bias dark current in P-I-N and avalanche diodes and to improve performance of opto-electronic devices, such as light-emitting diodes, lasers, solar cells, photo-cathodes and photo-detectors. The pnictide layer may be applied to intermetallic and compound semiconductors having a pnictide component. The pnictides may be phosphorus, arsenic, antimony or bismuth, or combinations thereof.
The present invention represents an advance over the prior art.

Abstract translation: 其特征在于，在其表面上具有富含pnictide的层，其生产方法也被公开。 其特征在于，其包含具有层状局部顺序的无定形富含pnictide的材料层。 附图示出了拉曼光谱的比较，从中可以得出结论，本发明纤维的局部顺序是褶皱层状，黑磷片状晶体结构的无定形对应物。 一般来说，在III-V族半导体，特别是InP，GaP和GaAs上生长的pnictide薄膜，特别是磷，是无定形的，并且具有新颖的层状褶皱片状局部顺序。 薄膜通常为400埃（4×10 -6 cms），并且优选通过分子束沉积生长，尽管其它工艺，例如真空蒸发，溅射，化学气相沉积和来自液体熔体的沉积可能 使用。 这些层可以在III-V晶体的<100>，<110>和<111>表面上生长。 第一层降低了表面状态的密度，并且允许耗尽层被调制，表面阻挡减小，表面上的电子浓度增加，并且表面复合速度降低并且光致发光强度增加。 这些层可以用于MIS和金属 - 半导体（肖特基）器件，例如，绝缘和钝化MISFET，钝化MESFETS，以减少PIN和雪崩二极管中的反向偏置暗电流的表面电流分量，并提高性能 的光电子器件，例如发光二极管，激光器，太阳能电池，光电阴极和光电探测器。 可以将pnictide层应用于具有pnictide成分的金属间化合物和化合物半导体。 磷酸盐可以是磷，砷，锑或铋，或它们的组合。 本发明代表了现有技术的进步。

公开(公告)号：EP0130803A2

公开(公告)日：1985-01-09

申请号：EP84304410.8

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Baumann, John Andrew ,  Brock, David Geoffrey ,  Kuck, Mark Allen ,  Miller, Gary Kauilani

IPC: C23C14/14

CPC classification number: C23C14/14 ,  C23C14/24

Abstract: A vapour deposition process characterised in that an alkali metal intercalate is used as a source of alkali metal vapour is disclosed.
The use of an alkali metal intercalate as a source of alkali metal vapour in a vapour deposition process is also disclosed, as in a source of alkali metal vapour for use in a vapour deposition process comprising an alkali metal intercalate.
For example, a potassium graphite intercalate, KC 8 , may be heated to give a slow controlled release of potassium vapour for subsequent reaction with phosphorus vapour. Thin films of KP 15 and other polyphosphides may be produced by two-source vapour transport and by vacuum co-evaporation utilising KC 8 as the source of potassium vapour. RbC 8 and CsC 8 may be utilized as vapour sources to form the corresponding rubidium and cesium polyphosphides.
The present invention represents an advance over the prior art.

Abstract translation: 一种气相沉积方法，其特征在于使用碱金属嵌入物作为碱金属蒸气源。 还公开了在气相沉积工艺中使用碱金属嵌层作为碱金属蒸气源，如在用于包含碱金属插层的气相沉积方法的碱金属蒸气源中。 例如，可以加热钾石墨插层物KC8，以缓慢控制钾蒸气，以便随后与磷蒸气反应。 KP15和其他聚磷酸盐的薄膜可以通过双源蒸气输送和利用KC8作为钾蒸汽源的真空共蒸发来生产。 可以使用RbC8和CsC8作为蒸气源形成相应的铷和铯多磷化物。 本发明代表了现有技术的进步。