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1.发明授权Contact structure and corresponding manufacturing method for EPROM or flash EPROM semiconductor electronic devices 失效接触结构用于电子EPROM或闪存EPROM半导体电路及其制造方法
公开(公告)号：EP0851493B1
公开(公告)日：2006-11-29
申请号：EP96830655.5
申请日：1996-12-27
Applicant: STMicroelectronics S.r.l.
IPC: H01L27/00 , H01L21/768
CPC classification number: H01L21/76897 , H01L21/76838 , H01L2924/3011
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2.发明授权Contact structure and corresponding manufacturing method for EPROM or flash EPROM semiconductor electronic devices 失效接触结构用于电子EPROM或闪存EPROM半导体电路及其制造方法
公开(公告)号：EP0851493B9
公开(公告)日：2007-09-12
申请号：EP96830655.5
申请日：1996-12-27
Applicant: STMicroelectronics S.r.l.
IPC: H01L27/00 , H01L21/768
CPC classification number: H01L21/76897 , H01L21/76838 , H01L2924/3011
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