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公开(公告)号：EP0715312B1
公开(公告)日：2002-10-23
申请号：EP94830554.5
申请日：1994-11-30
Applicant: STMicroelectronics S.r.l.
Inventor： Pio, Frederico , Vajana, Bruno , Paruzzi, Paola
CPC classification number: G11C5/147 , G11C11/5621 , G11C16/30
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2.发明授权EEPROM memory cells matrix with double polisilicon level and relating manufacturing process 失效EEPROM存储单元阵列具有双级多晶硅和制造工艺
公开(公告)号：EP0730277B1
公开(公告)日：2002-11-13
申请号：EP95830064.2
申请日：1995-02-28
Applicant: STMicroelectronics S.r.l.
Inventor： Pio, Federico , Paruzzi, Paola
IPC: G11C16/00 , H01L27/115 , H01L21/8247
CPC classification number: H01L27/11521 , H01L27/115 , H01L27/11524
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3.发明授权Electrically programmable and erasable non-volatile memory cell and memory devices of FLASH and EEPROM type 失效电可编程可擦除非易失性存储器单元和FLASH和EEPROM型存储器阵列
公开(公告)号：EP0730310B1
公开(公告)日：2001-10-17
申请号：EP95830071.7
申请日：1995-03-03
Applicant: STMicroelectronics S.r.l.
Inventor： Baldi, Livio , Paruzzi, Paola
IPC: H01L29/788
CPC classification number: H01L29/7885
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