公开(公告)号：EP1237185A3

公开(公告)日：2003-07-30

申请号：EP02003714.9

申请日：2002-02-19

Applicant: STMicroelectronics S.r.l.

Inventor： Rainieri, Vito ,  Saggio, Mario

IPC: H01L21/76 ,  H01L21/265 ,  H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/7602

Abstract: A method for forming isolating structures in a silicon carbide layer (1,8) comprises the following steps: depositing a masking layer (2) onto the silicon carbide layer (1,8); and forming openings (2a) through said masking layer (2) to expose portions of the silicon carbide layer (1,8); and further comprises the steps of:ion implanting the whole chip surface;heat treating the entire surface of the silicon carbide layer (1,8) to form an oxide layer (4) having a first portion (5) with a first thickness in said at least one region (3), and having a second portion (6) with a second thickness at said silicon carbide layer (1,8).

公开(公告)号：EP1237185A2

公开(公告)日：2002-09-04

申请号：EP02003714.9

申请日：2002-02-19

Applicant: STMicroelectronics S.r.l.

Inventor： Rainieri, Vito ,  Saggio, Mario

IPC: H01L21/76 ,  H01L21/265 ,  H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/7602

Abstract: A method for forming isolating structures in a silicon carbide layer (1,8) comprises the following steps:

depositing a masking layer (2) onto the silicon carbide layer (1,8); and
forming openings (2a) through said masking layer (2) to expose portions of the silicon carbide layer (1,8); and further comprises the steps of:

ion implanting the whole chip surface;
heat treating the entire surface of the silicon carbide layer (1,8) to form an oxide layer (4) having a first portion (5) with a first thickness in said at least one region (3), and having a second portion (6) with a second thickness at said silicon carbide layer (1,8).

Abstract translation: 在碳化硅层（1,8）中形成隔离结构的方法包括以下步骤：将掩模层（2）沉积到碳化硅层（1,8）上; 以及通过所述掩模层（2）形成开口（2a）以暴露所述碳化硅层（1,8）的部分; 并且还包括以下步骤：离子注入整个芯片表面; 热处理碳化硅层（1,8）的整个表面以形成在所述至少一个区域（3）中具有第一厚度的第一部分（5）的氧化物层（4），并且具有第二部分 6）在所述碳化硅层（1,8）处具有第二厚度。