公开(公告)号：EP4074672A1

公开(公告)日：2022-10-19

申请号：EP21218406.3

申请日：2021-12-30

Applicant: STMicroelectronics S.r.l.

Inventor： CASUSCELLI, Valeria ,  SCALDAFERRI, Rossana

IPC: C04B35/462 ,  C01G23/00 ,  C01G25/00 ,  C01G45/12 ,  C04B35/465 ,  C04B35/468 ,  C04B35/49 ,  C04B35/622 ,  C04B35/624 ,  C04B35/632 ,  H01L41/187 ,  H01L41/318

Abstract: The present invention relates to a method for the preparation of a precursor solution for a ceramic of the BZT-αBXT type wherein X is selected from Ca, Sn, Mn and Nb and α is a molar fraction selected in the range between 0.10 and 0.90 comprising the steps of: a) dissolving at least one barium precursor compound and at least one precursor compound selected from the group consisting of a calcium precursor compound, a tin precursor compound, a manganese precursor compound and a niobium precursor compound in a linear or branched anhydrous alkyl alcohol containing from 2 to 6 carbon atoms and, after dissolution, dehydrating by stripping, to obtain a first solution; b) dissolving at least one zirconium precursor compound and at least one titanium precursor compound in a linear or branched anhydrous alkyl alcohol containing from 2 to 6 carbon atoms in the presence of an anhydrous chelating agent to obtain a second solution; c) joining said first and second solutions in an anhydrous environment and dehydrating by stripping to obtain said precursor solution. It also relates to a precursor solution, to a method for the preparation of a film of a piezoelectric material, to a piezoelectric material and to an electronic device comprising this piezoelectric material.

公开(公告)号：EP3185320B1

公开(公告)日：2019-05-22

申请号：EP16175277.9

申请日：2016-06-20

Applicant: STMicroelectronics S.r.l.

Inventor： BEVILACQUA, Maria Fortuna ,  VILLA, Flavio Francesco ,  SCALDAFERRI, Rossana ,  CASUSCELLI, Valeria ,  DI MATTEO, Andrea ,  FARALLI, Dino

IPC: H01L41/09 ,  H01L41/113 ,  H01L41/22 ,  H02N2/18

公开(公告)号：EP3185320A1

公开(公告)日：2017-06-28

申请号：EP16175277.9

申请日：2016-06-20

Applicant: STMicroelectronics S.r.l.

Inventor： BEVILACQUA, Maria Fortuna ,  VILLA, Flavio Francesco ,  SCALDAFERRI, Rossana ,  CASUSCELLI, Valeria ,  DI MATTEO, Andrea ,  FARALLI, Dino

IPC: H01L41/09 ,  H01L41/113 ,  H01L41/22 ,  H02N2/18

CPC classification number: H01L41/1138 ,  H01L41/047 ,  H01L41/053 ,  H01L41/1134 ,  H01L41/1876 ,  H01L41/22 ,  H01L41/25 ,  H01L41/29 ,  H01L41/332 ,  H02N2/186

Abstract: A MEMS piezoelectric device (20) has: a monolithic body (21) of semiconductor material, having a first main surface (21a) and a second main surface (21b), which are parallel to a horizontal plane (xy) formed by a first horizontal axis (x) and a second horizontal axis (y) and are opposite along a vertical axis (z); a housing cavity (22), arranged within the monolithic body (21); a membrane (23) suspended above the housing cavity (22), at the first main surface (21a) of the monolithic body; a piezoelectric material layer (30) arranged above a first surface (23a) of the membrane (23); an electrode arrangement (32), arranged in contact with the piezoelectric material layer (30); and a proof mass (24) coupled to a second surface (23b), opposite to the first surface (23a) along the vertical axis (z), of the membrane to cause deformation thereof in response to environmental mechanical vibrations. The proof mass is coupled to the membrane by a connection element (25) arranged, in a central position, between the membrane and the proof mass in the direction of the vertical axis (z). Main figure: Figure 3a

Abstract translation: 一种MEMS压电器件（20），具有：由第一主表面（21a）和第二主表面（21b）构成的半导体材料的单片体（21），所述第一主表面（21a）和第二主表面（21b）平行于由第一主表面 水平轴（x）和第二水平轴（y）并沿着垂直轴（z）相反; 布置在所述单体主体（21）内的壳体腔（22）; 在整体式主体的第一主表面（21a）处悬挂在壳体空腔（22）上方的膜（23） 布置在所述膜（23）的第一表面（23a）上方的压电材料层（30）; 电极布置（32），布置成与压电材料层（30）接触; 和检测质量块（24），所述检测质量块（24）耦合到所述膜的与所述第一表面（23a）沿所述垂直轴（z）相反的第二表面（23b），以响应于环境机械振动而引起其变形。 检测质量块通过连接元件（25）联接到膜上，连接元件（25）在中心位置沿着垂直轴线（z）的方向布置在膜和检测质量块之间。 主要数字：图3a