Abstract:
The present invention relates to a precursor solution for the preparation of a ceramic of the BZT-αBXT type, where X is selected from Ca, Sn, Mn and Nb, and α is a molar fraction selected in the range between 0.10 and 0.90, said solution comprising: 1) at least one anhydrous or dehydrated precursor compound of barium, 2) at least one anhydrous or dehydrated precursor compound selected from the group consisting of a calcium compound, a tin compound, a manganese compound, and a niobium compound, 3) at least one anhydrous precursor compound of zirconium, 4) at least one anhydrous precursor compound of titanium, 5) a solvent selected from the group consisting of polyols, alcohols, carboxylic acids, esters, ketones, ethers, and their mixtures, 6) a chelating agent. The invention moreover relates to a method for the preparation of the precursor solution, to a piezoelectric material obtained from the precursor solution, to a method for the preparation of a film of the piezoelectric material, to a device comprising the piezoelectric material, and to the use of the piezoelectric material.
Abstract:
The present invention relates to a precursor solution for the preparation of a ceramic of the BZT-αBXT type, where X is selected from Ca, Sn, Mn, and Nb, and α is a molar fraction selected in the range between 0.10 and 0.90, said solution comprising: 1) at least one barium precursor compound; 2) a precursor compound selected from the group consisting of at least one calcium compound, at least one tin compound, at least one manganese compound, and at least one niobium compound; 3) at least one anhydrous precursor compound of zirconium; 4) at least one anhydrous precursor compound of titanium; 5) a solvent selected from the group consisting of a polyol and mixtures of a polyol and a secondary solvent selected from the group consisting of alcohols, carboxylic acids, esters, ketones, ethers, and their mixtures; and 6) a chelating agent. The invention moreover relates to a method for the preparation of the precursor solution, to a piezoelectric material obtained from the precursor solution, to a method for the preparation of a film of the piezoelectric material, to a device comprising the piezoelectric material, and to the use of the piezoelectric material.
Abstract:
A MEMS piezoelectric device (20) has: a monolithic body (21) of semiconductor material, having a first main surface (21a) and a second main surface (21b), which are parallel to a horizontal plane (xy) formed by a first horizontal axis (x) and a second horizontal axis (y) and are opposite along a vertical axis (z); a housing cavity (22), arranged within the monolithic body (21); a membrane (23) suspended above the housing cavity (22), at the first main surface (21a) of the monolithic body; a piezoelectric material layer (30) arranged above a first surface (23a) of the membrane (23); an electrode arrangement (32), arranged in contact with the piezoelectric material layer (30); and a proof mass (24) coupled to a second surface (23b), opposite to the first surface (23a) along the vertical axis (z), of the membrane to cause deformation thereof in response to environmental mechanical vibrations. The proof mass is coupled to the membrane by a connection element (25) arranged, in a central position, between the membrane and the proof mass in the direction of the vertical axis (z). Main figure: Figure 3a