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1.发明公开Method for manufacturing a single electron device by electro-migration of nanoclusters and corresponding single electron device 审中-公开一种用于通过纳米团簇的电迁移产生单电子器件，和相应的单电子器件的方法
公开(公告)号：EP1528039A1
公开(公告)日：2005-05-04
申请号：EP04025635.6
申请日：2004-10-28
Applicant: STMicroelectronics S.r.l.
Inventor： Mascolo, Danilo , Scaldaferri, Rossana , Napolitano, Teresa , Casuscelli, Valeria , Occhipinti, Luigi
CPC classification number: B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L29/66439 , H01L49/006 , Y10S438/969
Abstract: The present invention relates to a method for manufacturing a single electron device (80) by electro-migration of nanoclusters (52). The inventive method comprises the steps of:
patterning a substrate (10, 40);
preparing metallic passivated nanoclusters (52);
forcing the metallic passivated nanoclusters (52) to assembly over the patterned substrate (10) under control of a non homogeneous electric field.
The invention also relates to a single electron device comprising a quantum dot as single electron component.
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