公开(公告)号：EP3462508A2

公开(公告)日：2019-04-03

申请号：EP18197797.6

申请日：2018-09-28

Applicant: STMicroelectronics S.r.l.

Inventor： PATTI, Davide Giuseppe ,  VALVO, Giuseppina ,  SANFILIPPO, Delfo Nunziato

IPC: H01L49/02 ,  H01G4/30 ,  H01G4/33 ,  H01G2/22 ,  H01G4/14 ,  H01G4/252

Abstract: A capacitor (21; 31; 41) comprising: a substrate (22); a bottom plate, which extends over the substrate and includes a first conductive layer (28); a top plate, which extends over the bottom plate and includes a second conductive layer (46); a contact region (42), electrically coupled to the first conductive layer (28); and a first dielectric layer (38) including a first dielectric region (48), which extends between the bottom plate and the top plate, and a second dielectric region, which extends between the first dielectric region and the contact region (42), the first and second dielectric regions being adjacent to one another. The second dielectric region has a surface (38a) having a plurality of grooves designed to increase the extension of a surface path between the second conductive layer (46) and the contact region (42).

公开(公告)号：EP3462508B1

公开(公告)日：2020-08-12

申请号：EP18197797.6

申请日：2018-09-28

Applicant: STMicroelectronics S.r.l.

Inventor： PATTI, Davide Giuseppe ,  VALVO, Giuseppina ,  SANFILIPPO, Delfo Nunziato

IPC: H01L49/02 ,  H01G4/30 ,  H01G4/33 ,  H01G2/22 ,  H01G4/14 ,  H01G4/252

公开(公告)号：EP3462508A3

公开(公告)日：2019-05-29

申请号：EP18197797.6

申请日：2018-09-28

Applicant: STMicroelectronics S.r.l.

Inventor： PATTI, Davide Giuseppe ,  VALVO, Giuseppina ,  SANFILIPPO, Delfo Nunziato

IPC: H01L49/02 ,  H01G4/30 ,  H01G4/33 ,  H01G2/22 ,  H01G4/14 ,  H01G4/252

Abstract: A capacitor (21; 31; 41) comprising: a substrate (22); a bottom plate, which extends over the substrate and includes a first conductive layer (28); a top plate, which extends over the bottom plate and includes a second conductive layer (46); a contact region (42), electrically coupled to the first conductive layer (28); and a first dielectric layer (38) including a first dielectric region (48), which extends between the bottom plate and the top plate, and a second dielectric region, which extends between the first dielectric region and the contact region (42), the first and second dielectric regions being adjacent to one another. The second dielectric region has a surface (38a) having a plurality of grooves designed to increase the extension of a surface path between the second conductive layer (46) and the contact region (42).

公开(公告)号：EP1865556A1

公开(公告)日：2007-12-12

申请号：EP06114962.1

申请日：2006-06-05

Applicant: STMicroelectronics S.r.l. ,  Politecnico Di Milano

Inventor： VALVO, Giuseppina ,  FALLICA, Piero Giorgio ,  AGOSTEO, Stefano ,  FAZZI, Alberto

IPC: H01L27/146

CPC classification number: H01L31/103 ,  H01L27/1463 ,  H01L31/115

Abstract: A radiation detector ( 105 ) of the ΔE-E type is proposed. The detector is integrated in a chip ( 205 ) of semiconductor material with a front surface ( 216 ) and a back surface ( 215 ) opposite the front surface, the detector having at least one detection cell ( 236 ) arranged on the front surface for receiving a radiation to be evaluated, wherein the detector includes: a first region ( 224,240,263 ) of a first type of conductivity extending into the chip from the front surface to a first depth; a second region ( 220,235 ) of a second type of conductivity extending into the chip from the back surface to a second depth so as to reach the first region; and for each detection cell a third region ( 255 ) of the second type of conductivity extending into the first region from the front surface to a third depth lower than the first depth and the second depth, a thin sensitive volume for absorbing energy from the radiation being defined by a junction between the first region and each third region, and a thick sensitive volume for absorbing further energy from the radiation being defined by a farther junction between the first region and the second region. For each detection cell the detector further includes insulation means ( 270 ) arranged around the third region and extending from the front surface into the first region to an insulation depth comprised between the first depth and the third depth.

Abstract translation: 提出了“E-E型”的放射线检测器（105）。 检测器集成在具有与前表面相对的前表面（216）和后表面（215）的半导体材料的芯片（205）中，检测器具有布置在前表面上的至少一个检测单元（236），用于接收 要评估的辐射，其中所述检测器包括：从所述前表面延伸到所述第一深度的第一类型导电体的第一区域（224,240,263）; 从第二深度延伸到芯片中的第二类型导电体的第二区域（220,235），以到达第一区域; 并且对于每个检测单元，第二导电类型的第三区域（255）从前表面延伸到比第一深度和第二深度低的第三深度的第一区域，用于从辐射吸收能量的薄敏感体积 由第一区域和每个第三区域之间的接合部限定，并且用于从第一区域和第二区域之间的更远的接合点限定的辐射吸收进一步的能量的厚的灵敏体积。 对于每个检测单元，检测器还包括布置在第三区域周围并从前表面延伸到第一区域到第一深度和第三深度之间的绝缘深度的绝缘装置（270）。