公开(公告)号：EP3462508B1

公开(公告)日：2020-08-12

申请号：EP18197797.6

申请日：2018-09-28

Applicant: STMicroelectronics S.r.l.

Inventor： PATTI, Davide Giuseppe ,  VALVO, Giuseppina ,  SANFILIPPO, Delfo Nunziato

IPC: H01L49/02 ,  H01G4/30 ,  H01G4/33 ,  H01G2/22 ,  H01G4/14 ,  H01G4/252

公开(公告)号：EP3462508A3

公开(公告)日：2019-05-29

申请号：EP18197797.6

申请日：2018-09-28

Applicant: STMicroelectronics S.r.l.

Inventor： PATTI, Davide Giuseppe ,  VALVO, Giuseppina ,  SANFILIPPO, Delfo Nunziato

IPC: H01L49/02 ,  H01G4/30 ,  H01G4/33 ,  H01G2/22 ,  H01G4/14 ,  H01G4/252

Abstract: A capacitor (21; 31; 41) comprising: a substrate (22); a bottom plate, which extends over the substrate and includes a first conductive layer (28); a top plate, which extends over the bottom plate and includes a second conductive layer (46); a contact region (42), electrically coupled to the first conductive layer (28); and a first dielectric layer (38) including a first dielectric region (48), which extends between the bottom plate and the top plate, and a second dielectric region, which extends between the first dielectric region and the contact region (42), the first and second dielectric regions being adjacent to one another. The second dielectric region has a surface (38a) having a plurality of grooves designed to increase the extension of a surface path between the second conductive layer (46) and the contact region (42).

公开(公告)号：EP3462508A2

公开(公告)日：2019-04-03

申请号：EP18197797.6

申请日：2018-09-28

Applicant: STMicroelectronics S.r.l.

Inventor： PATTI, Davide Giuseppe ,  VALVO, Giuseppina ,  SANFILIPPO, Delfo Nunziato

IPC: H01L49/02 ,  H01G4/30 ,  H01G4/33 ,  H01G2/22 ,  H01G4/14 ,  H01G4/252

Abstract: A capacitor (21; 31; 41) comprising: a substrate (22); a bottom plate, which extends over the substrate and includes a first conductive layer (28); a top plate, which extends over the bottom plate and includes a second conductive layer (46); a contact region (42), electrically coupled to the first conductive layer (28); and a first dielectric layer (38) including a first dielectric region (48), which extends between the bottom plate and the top plate, and a second dielectric region, which extends between the first dielectric region and the contact region (42), the first and second dielectric regions being adjacent to one another. The second dielectric region has a surface (38a) having a plurality of grooves designed to increase the extension of a surface path between the second conductive layer (46) and the contact region (42).