公开(公告)号：US20160078963A1

公开(公告)日：2016-03-17

申请号：US14844442

申请日：2015-09-03

Applicant: STMicroelectronics SA

Inventor： Stephane Lacouture ,  Joel Damiens

IPC: G11C17/18 ,  G11C17/16

CPC classification number: G11C17/18 ,  G11C5/145 ,  G11C17/16 ,  G11C17/165

Abstract: For programming an antifuse memory, the power consumption of the memory is assessed during programming mode. The power consumption is compared with a threshold. When the threshold is exceeded, indicative of successful programming of the antifuse memory cell, the programming mode is terminated.

Abstract translation: 为了编程反熔丝存储器，在编程模式下评估存储器的功耗。 将功耗与阈值进行比较。 当超过阈值时，指示反熔丝存储器单元的成功编程，编程模式被终止。

公开(公告)号：US09536622B2

公开(公告)日：2017-01-03

申请号：US14844442

申请日：2015-09-03

Applicant: STMicroelectronics SA

Inventor： Stephane Lacouture ,  Joel Damiens

IPC: G11C17/16 ,  G11C16/18 ,  G11C17/14 ,  G11C17/18 ,  G11C5/14

CPC classification number: G11C17/18 ,  G11C5/145 ,  G11C17/16 ,  G11C17/165

Abstract: For programming an antifuse memory, the power consumption of the memory is assessed during programming mode. The power consumption is compared with a threshold. When the threshold is exceeded, indicative of successful programming of the antifuse memory cell, the programming mode is terminated.

Abstract translation: 为了编程反熔丝存储器，在编程模式下评估存储器的功耗。 将功耗与阈值进行比较。 当超过阈值时，指示反熔丝存储器单元的成功编程，编程模式被终止。