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Patent Agency Ranking1.发明授权Level shifter for semiconductor memory device implemented with low-voltage transistors 有权与低电压晶体管实现电平转换器的半导体存储器件
公开(公告)号：EP1835507B1
公开(公告)日：2010-08-18
申请号：EP06111337.9
申请日：2006-03-17
Applicant: STMicroelectronics Srl
Inventor： Campardo, Giovanni , Micheloni, Rino
CPC classification number: G11C5/145 , G11C7/1051 , G11C7/1057 , G11C7/1078 , G11C7/1084 , G11C8/08 , G11C16/08 , G11C16/12 , H03K3/356113
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2.发明授权Method for replacing failed non-volatile memory cells and corresponding memory device 有权一种用于替换失效非易失性存储单元和相应的存储器阵列的方法
公开(公告)号：EP1403879B1
公开(公告)日：2010-11-03
申请号：EP02425591.1
申请日：2002-09-30
Applicant: STMicroelectronics Srl
Inventor： Campardo, Giovanni , Micheloni, Rino
CPC classification number: G11C29/82 , G11C16/04 , G11C16/16 , G11C29/44 , G11C2029/1208
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3.发明授权Method for storing and reading data in a multibit nonvolatile memory with a non-binary number of bits per cell 有权与非二进制数每单元的比特存储和读取的非易失性Multibitspeichers的数据的方法
公开(公告)号：EP1199725B1
公开(公告)日：2010-10-06
申请号：EP00830671.4
申请日：2000-10-13
Applicant: STMicroelectronics Srl
Inventor： Micheloni, Rino , Campardo, Giovanni
CPC classification number: G11C11/5642 , G11C8/00 , G11C11/56 , G11C11/5621
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公开(公告)号：EP0915478B1
公开(公告)日：2010-04-28
申请号：EP97830572.0
申请日：1997-11-05
Applicant: STMicroelectronics Srl
Inventor： Micheloni, Rino , Campardo, Giovanni , Ferrario, Donato , Golla, Carla Maria
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5.发明授权Row decoder for a flash-EEPROM memory device with the possibility of selective erasing of a sub-group of rows of a sector 失效行译码器对于快闪EEPROM存储器阵列的扇区的行子集的选择性缺失的可能性
公开(公告)号：EP0920023B1
公开(公告)日：2010-06-30
申请号：EP97830625.6
申请日：1997-11-26
Applicant: STMicroelectronics Srl
Inventor： Campardo, Giovanni , Micheloni, Rino
CPC classification number: G11C16/08
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