Patent search ap:("STMicroelectronics Srl") AND inv:"Ferrario Page Donato"

1.

发明授权
Improved boosting circuit, particularly for a memory device 失效
Title translation: 对于存储器阵列改进升压电路

公开(公告)号：EP0915478B1

公开(公告)日：2010-04-28

申请号：EP97830572.0

申请日：1997-11-05

Applicant: STMicroelectronics Srl

Inventor： Micheloni, Rino , Campardo, Giovanni , Ferrario, Donato , Golla, Carla Maria

IPC: G11C16/00 , G11C8/00 , G11C5/14

CPC classification number: G11C16/08 , G11C8/08 , G11C8/10

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