Voltage shifter for high voltage operations
    1.
    发明公开
    Voltage shifter for high voltage operations 审中-公开
    PegelumsetzerfürHochspannungsvorgänge

    公开(公告)号:EP2302794A1

    公开(公告)日:2011-03-30

    申请号:EP09425358.0

    申请日:2009-09-18

    CPC classification number: H03K3/35613 H03K19/018528

    Abstract: A voltage shifter (20) has a supply line receiving a supply voltage (VH) that varies between a first operating value in a first operating condition and a second high operating value, in a second operating condition. A latch stage (2) is connected to an output branch (6) and to a selection circuit (5), which receives a selection signal (SEL) that controls switching of the latch stage. The latch stage is coupled to the supply line and to a reference potential line (34), which receives a reference voltage (WB) that can vary between a first reference value, when the supply voltage has the first operating value, and a second reference value, higher than the first reference value, when the supply voltage has the second operating value. A uncoupling stage (23) is arranged between the latch stage (2) and the selection circuit (5) and uncouples them in the second operating condition, when the supply voltage and the reference voltage are at their second, high, value.

    Abstract translation: 电压移位器(20)具有在第二操作状态下接收在第一操作状态下的第一操作值和第二高操作值之间变化的电源电压(VH)的电源线。 锁存级(2)连接到输出分支(6)和选择电路(5),选择电路(5)接收控制锁存级的切换的选择信号(SEL)。 锁存级耦合到电源线和参考电位线(34),该参考电位线(34)接收参考电压(WB),当电源电压具有第一操作值时,参考电压(WB)可以在第一参考值和第二参考值之间变化 值,高于第一参考值,当电源电压具有第二操作值时。 当电源电压和参考电压处于其第二,高值时,在锁存级(2)和选择电路(5)之间布置有非耦合级(23)并在第二操作状态下使它们断开。

    Low consumption voltage regulator for a high voltage charge pump, voltage regulation method, and memory device provided with said voltage regulator
    5.
    发明公开
    Low consumption voltage regulator for a high voltage charge pump, voltage regulation method, and memory device provided with said voltage regulator 有权
    电压调节器具有低功耗高压电荷泵电压控制方法和存储设备具有这样的电压调节器

    公开(公告)号:EP2299576A1

    公开(公告)日:2011-03-23

    申请号:EP09425361.4

    申请日:2009-09-18

    CPC classification number: H02M3/07 G11C5/145 H02M2001/0025

    Abstract: A voltage regulator (40; 50) for a regulated voltage generator (2) configured for generating an operating voltage (V OUT ), the voltage regulator comprising: a variable comparison voltage generator (42), configured for generating on an output (48c) of its own a comparison voltage (V C ); a partition branch (44; 52) including a plurality of active devices (T 1 , ..., T M-1 , T M ) of a resistive type, configured for receiving at input the operating voltage (V OUT ) and supplying at output an intermediate voltage (V R ) correlated to the operating voltage; and a comparator (46), configured for receiving at input the comparison voltage (V C ) and the intermediate voltage (V R ) and supplying at output a regulation signal (V ON/OFF ) for the regulated-voltage generator (2).

    Abstract translation: 一种电压调节器(40; 50),用于配置用于在工作电压(V OUT)产生调节电压发生器(2),所述电压调节器包括:配置在输出上产生一个可变比较电压发生器(42),(48C) 其自身的比较电压(VC)的; 一个分区的分支(44; 52)包括有源器件的多个(T 1,...,T M-1,TM)电阻式,配置成用于在工作电压(V OUT)接收输入并在输出供给的 在中间电压(VR)相关的工作电压; 并且被配置用于在输入端接收所述比较电压(V C)和中间电压(V R)和在输出端供应调节信号(V ON / OFF)的调节电压发生器的比较器(46)(2)。

    Method for biasing an EEPROM non-volatile memory array and corresponding EEPROM non-volatile memory device
    6.
    发明公开
    Method for biasing an EEPROM non-volatile memory array and corresponding EEPROM non-volatile memory device 有权
    偏置非易失性EEPROM存储器阵列和对应的非易失性EEPROM存储器阵列的方法

    公开(公告)号:EP2302635A1

    公开(公告)日:2011-03-30

    申请号:EP09425359.8

    申请日:2009-09-18

    CPC classification number: G11C16/0433 G11C16/10 G11C16/16

    Abstract: Described herein is a method for biasing an EEPROM array (10) formed by memory cells (2) arranged in rows and columns, each operatively coupled to a first switch (3) and to a second switch (4) and having a first current-conduction terminal selectively connectable to a bitline (BL) through the first switch (3) and a control terminal selectively connectable to a gate-control line (Cgt) through the second switch (4), wherein associated to each row are a first wordline (WL seltr) and a second wordline (WL bsw), connected to the control terminals of the first switches (3) and, respectively, of the second switches (4) operatively coupled to the memory cells (2) of the same row. The method envisages selecting at least one memory cell (2) for a given memory operation, biasing the first wordline and the second wordline of the row associated thereto, and in particular biasing the first and second wordlines with voltages different from one another and having values that are higher than an internal supply voltage (V DD ) and are a function of the given memory operation.

    Abstract translation: 在描述了一种用于EEPROM阵列的偏压(10)的存储单元(2)形成排列成行和列,每个可操作地耦合到第一开关的方法(3)和第二开关(4),并具有第一电流 - 导通端子选择性地连接到穿过所述第二开关与第一开关(3)和控制端子选择性地连接到栅极控制线(CGT)的位线(BL)(4),相关联的各行worin是第一字线( WL seltr)和第二字线(WL BSW),分别连接到第一开关(3)和,的控制端子,所述第二开关(4),其可操作地耦合到同一行的存储单元(2)。 该方法设想选择至少一个存储单元(2)对于给定的存储器操作,偏置第一字线和列与其相关联的第二个字线,且在特定偏置与彼此和具有值的不同电压下的第一和第二字线 并比内部电源电压(V DD)和更高的给定的存储器操作的功能。

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