Sense-amplifier circuit for non-volatile memories that operates at low supply voltages
    10.
    发明公开
    Sense-amplifier circuit for non-volatile memories that operates at low supply voltages 有权
    用于非易失性存储器,其在低电源电压下工作的读出放大器电路

    公开(公告)号:EP2299450A8

    公开(公告)日:2011-05-11

    申请号:EP09425360.6

    申请日:2009-09-18

    Abstract: A sense-amplifier circuit (1) for a non-volatile memory is provided with: a comparison stage (15, 16a-16b) that executes, during a comparison step, a comparison between a cell current (I cell ) that flows in a memory cell (2) and through an associated bitline (BL), and a reference current (I ref ), for supplying an output signal (Out sense) indicating the state of the memory cell (2); and a precharging stage (18a-18b, 22a-22b), which supplies, during a precharging step prior to the comparison step, a precharging current to the bitline (BL) so as to charge a capacitance thereof; the comparison stage is formed by a first comparison transistor (16a) and by a second comparison transistor (16b), which are coupled in current-mirror configuration respectively to a first differential output (Out1) and to a second differential output (Out2), through which a biasing current flows. The precharging stage diverts, during the precharging step, the biasing current towards the bitline (BL) as precharging current, and allows, during the comparison step, passage of part of the biasing current towards the first differential output, enabling operation of the current mirror.

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