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公开(公告)号：EP1612949B1
公开(公告)日：2010-04-21
申请号：EP04425485.2
申请日：2004-06-30
Applicant: STMicroelectronics Srl
Inventor： Marelli, Alessia , Ravasio, Roberto , Micheloni, Rino
CPC classification number: H03M13/152 , H03M13/1575 , H03M13/3707 , H03M13/6502
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公开(公告)号：EP1750277B1
公开(公告)日：2010-05-19
申请号：EP05425559.1
申请日：2005-07-28
Applicant: STMicroelectronics Srl , Hynix Semiconductor Inc.
Inventor： Bovino, Angelo , Ravasio, Roberto , Micheloni, Rino
CPC classification number: G11C11/5621 , G11C16/20
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3.发明授权A circuit for programming a non-volatile memory device with adaptive program load control 有权用于与自适应负载控制程序的非易失性存储器器件的编程电路
公开(公告)号：EP1420415B1
公开(公告)日：2016-01-06
申请号：EP03104130.4
申请日：2003-11-10
Applicant: STMicroelectronics Srl
Inventor： Micheloni, Rino , Ravasio, Roberto
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4.发明授权Row decoder for a flash-EEPROM memory device with the possibility of selective erasing of a sub-group of rows of a sector 失效行译码器对于快闪EEPROM存储器阵列的扇区的行子集的选择性缺失的可能性
公开(公告)号：EP0920023B1
公开(公告)日：2010-06-30
申请号：EP97830625.6
申请日：1997-11-26
Applicant: STMicroelectronics Srl
Inventor： Campardo, Giovanni , Micheloni, Rino
CPC classification number: G11C16/08
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公开(公告)号：EP1883076B1
公开(公告)日：2011-12-21
申请号：EP06425536.7
申请日：2006-07-28
Applicant: STMicroelectronics Srl , Hynix Semiconductor Inc.
Inventor： Crippa, Luca , Ravasio, Roberto , Micheloni, Rino
CPC classification number: G11C16/10 , G11C7/18 , G11C11/5628 , G11C16/0483 , G11C16/24 , G11C16/3427
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Patent Agency Ranking6.发明授权Level shifter for semiconductor memory device implemented with low-voltage transistors 有权与低电压晶体管实现电平转换器的半导体存储器件
公开(公告)号：EP1835507B1
公开(公告)日：2010-08-18
申请号：EP06111337.9
申请日：2006-03-17
Applicant: STMicroelectronics Srl
Inventor： Campardo, Giovanni , Micheloni, Rino
CPC classification number: G11C5/145 , G11C7/1051 , G11C7/1057 , G11C7/1078 , G11C7/1084 , G11C8/08 , G11C16/08 , G11C16/12 , H03K3/356113
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7.发明授权Method of fixing read evaluation time in a non volatile nand type memory device 有权设定评价的读出时间在非易失性NAND存储器装置的方法中，
公开(公告)号：EP1901309B1
公开(公告)日：2010-04-28
申请号：EP06425631.6
申请日：2006-09-13
Applicant: STMicroelectronics Srl , Hynix Semiconductor Inc.
Inventor： Crippa, Luca , Ravasio, Roberto , Micheloni, Rino
CPC classification number: G11C29/02 , G11C16/04 , G11C29/023 , G11C29/025 , G11C29/028 , G11C29/50012 , G11C2029/1204
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8.发明授权A non-volatile, electrically-programmable memory with a plurality of storage densities and data transfer speeds 有权具有多个密度和数据传输速率的非易失性的，电可编程存储器
公开(公告)号：EP1892720B1
公开(公告)日：2011-07-27
申请号：EP06119479.1
申请日：2006-08-24
Applicant: STMicroelectronics Srl , Hynix Semiconductor Inc.
Inventor： Micheloni, Rino , Ravasio, Roberto
CPC classification number: G11C11/5628 , G11C16/0483 , G11C16/3418 , G11C2211/5641
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公开(公告)号：EP1750271B1
公开(公告)日：2011-05-11
申请号：EP05425558.3
申请日：2005-07-28
Applicant: STMicroelectronics Srl , Hynix Semiconductor Inc.
Inventor： Crippa, Luca , Sangalli, Miriam , Ragone, Giancarlo , Micheloni, Rino
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10.发明授权Method for replacing failed non-volatile memory cells and corresponding memory device 有权一种用于替换失效非易失性存储单元和相应的存储器阵列的方法
公开(公告)号：EP1403879B1
公开(公告)日：2010-11-03
申请号：EP02425591.1
申请日：2002-09-30
Applicant: STMicroelectronics Srl
Inventor： Campardo, Giovanni , Micheloni, Rino
CPC classification number: G11C29/82 , G11C16/04 , G11C16/16 , G11C29/44 , G11C2029/1208
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