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公开(公告)号：EP1612949B1
公开(公告)日：2010-04-21
申请号：EP04425485.2
申请日：2004-06-30
Applicant: STMicroelectronics Srl
Inventor： Marelli, Alessia , Ravasio, Roberto , Micheloni, Rino
CPC classification number: H03M13/152 , H03M13/1575 , H03M13/3707 , H03M13/6502
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Patent Agency Ranking2.发明授权A circuit for programming a non-volatile memory device with adaptive program load control 有权用于与自适应负载控制程序的非易失性存储器器件的编程电路
公开(公告)号：EP1420415B1
公开(公告)日：2016-01-06
申请号：EP03104130.4
申请日：2003-11-10
Applicant: STMicroelectronics Srl
Inventor： Micheloni, Rino , Ravasio, Roberto
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公开(公告)号：EP1750277B1
公开(公告)日：2010-05-19
申请号：EP05425559.1
申请日：2005-07-28
Applicant: STMicroelectronics Srl , Hynix Semiconductor Inc.
Inventor： Bovino, Angelo , Ravasio, Roberto , Micheloni, Rino
CPC classification number: G11C11/5621 , G11C16/20
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公开(公告)号：EP1883076B1
公开(公告)日：2011-12-21
申请号：EP06425536.7
申请日：2006-07-28
Applicant: STMicroelectronics Srl , Hynix Semiconductor Inc.
Inventor： Crippa, Luca , Ravasio, Roberto , Micheloni, Rino
CPC classification number: G11C16/10 , G11C7/18 , G11C11/5628 , G11C16/0483 , G11C16/24 , G11C16/3427
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5.发明授权Method of fixing read evaluation time in a non volatile nand type memory device 有权设定评价的读出时间在非易失性NAND存储器装置的方法中，
公开(公告)号：EP1901309B1
公开(公告)日：2010-04-28
申请号：EP06425631.6
申请日：2006-09-13
Applicant: STMicroelectronics Srl , Hynix Semiconductor Inc.
Inventor： Crippa, Luca , Ravasio, Roberto , Micheloni, Rino
CPC classification number: G11C29/02 , G11C16/04 , G11C29/023 , G11C29/025 , G11C29/028 , G11C29/50012 , G11C2029/1204
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6.发明授权A non-volatile, electrically-programmable memory with a plurality of storage densities and data transfer speeds 有权具有多个密度和数据传输速率的非易失性的，电可编程存储器
公开(公告)号：EP1892720B1
公开(公告)日：2011-07-27
申请号：EP06119479.1
申请日：2006-08-24
Applicant: STMicroelectronics Srl , Hynix Semiconductor Inc.
Inventor： Micheloni, Rino , Ravasio, Roberto
CPC classification number: G11C11/5628 , G11C16/0483 , G11C16/3418 , G11C2211/5641
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