公开(公告)号：US20210202791A1

公开(公告)日：2021-07-01

申请号：US17198491

申请日：2021-03-11

Applicant: Sensor Electronic Technology, Inc.

Inventor： Mikhail Gaevski ,  Alexander Dobrinsky ,  Maxim S. Shatalov ,  Michael Shur

IPC: H01L33/00 ,  H01L33/06 ,  H01S5/32 ,  H01L21/683 ,  H01S5/343 ,  H01L33/32 ,  H01L33/02 ,  H01L21/02

Abstract: A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.

公开(公告)号：US10892381B2

公开(公告)日：2021-01-12

申请号：US16288852

申请日：2019-02-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Mikhail Gaevski ,  Alexander Dobrinsky

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/32

Abstract: A growth layer having a growth surface with protruding domains is described. The protruding domains can be separated by a substantially flat growth surface located between the protruding domains. A protruding domain can include an internal region that can be filled with a gas and/or can be partially or completely filled with one or more materials that differ from the material of the growth layer, which forms an outer surface of each of the protruding domains.

公开(公告)号：US20170098739A1

公开(公告)日：2017-04-06

申请号：US15283462

申请日：2016-10-03

Applicant: Sensor Electronic Technology, Inc.

Inventor： Mikhail Gaevski ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur

IPC: H01L33/38 ,  H01L33/32 ,  H01L33/12 ,  H01L33/00 ,  H01L31/0232 ,  H01L31/109 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/0224 ,  H01L31/18 ,  H01S5/22 ,  H01S5/042 ,  H01S5/343 ,  H01L33/40

CPC classification number: H01L33/387 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/03048 ,  H01L31/035236 ,  H01L31/0392 ,  H01L31/109 ,  H01L31/1848 ,  H01L31/1852 ,  H01L33/007 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/46 ,  H01L2933/0016 ,  H01L2933/0091 ,  Y02E10/50

Abstract: An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include a n-type semiconductor layer having a surface. A mesa can be located over a first portion of the surface of the n-type semiconductor layer and have a mesa boundary. A n-type contact region can be located over a second portion of the surface of the n-type semiconductor contact layer entirely distinct from the first portion, and be at least partially defined by the mesa boundary. A first n-type metallic contact layer can be located over at least a portion of the n-type contact region in proximity of the mesa boundary, where the first n-type metallic contact layer forms an ohmic contact with the n-type semiconductor layer. A second n-type metallic contact layer can be located over a second portion of the n-type contact region, where the second n-type metallic contact layer is formed of a reflective metallic material.

公开(公告)号：US09514947B2

公开(公告)日：2016-12-06

申请号：US14747150

申请日：2015-06-23

Applicant: Sensor Electronic Technology, Inc.

Inventor： Remigijus Gaska ,  Xuhong Hu ,  Michael Shur ,  Mikhail Gaevski

IPC: H01L29/43 ,  H01L29/45 ,  H01L21/283 ,  H01L31/0224 ,  H01L33/40 ,  H01S5/042 ,  H01S5/30 ,  H01L23/482 ,  H01L23/00 ,  H01L33/62

CPC classification number: H01L21/283 ,  H01L21/28264 ,  H01L21/28575 ,  H01L23/482 ,  H01L24/03 ,  H01L24/05 ,  H01L29/43 ,  H01L29/45 ,  H01L29/452 ,  H01L29/456 ,  H01L29/4966 ,  H01L31/022425 ,  H01L33/40 ,  H01L33/405 ,  H01L33/62 ,  H01L2224/03848 ,  H01L2224/05019 ,  H01L2224/0508 ,  H01L2224/05084 ,  H01L2224/051 ,  H01L2224/05116 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05644 ,  H01L2924/10323 ,  H01L2924/1033 ,  H01L2924/10334 ,  H01L2924/10344 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/3013 ,  H01L2924/00

Abstract: A contact to a semiconductor including sequential layers of Cr, Ti, and Al is provided, which can result in a contact with one or more advantages over Ti/Al-based and Cr/Al-based contacts. For example, the contact can: reduce a contact resistance; provide an improved surface morphology; provide a better contact linearity; and/or require a lower annealing temperature, as compared to the prior art Ti/Al-based contacts.

Abstract translation: 提供了与包括Cr，Ti和Al的连续层的半导体的接触，其可以导致与基于Ti / Al和Cr / Al的触点相关的一个或多个优点的接触。 例如，触点可以：降低接触电阻; 提供改进的表面形态; 提供更好的接触线性; 和/或要求较低的退火温度，与现有技术的Ti / Al基触点相比。

公开(公告)号：US09467105B2

公开(公告)日：2016-10-11

申请号：US14225761

申请日：2014-03-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Mikhail Gaevski ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H03F3/217 ,  H01L29/40 ,  H01L29/778 ,  H01L29/06 ,  H01L29/20

CPC classification number: H03F3/2171 ,  H01L29/0603 ,  H01L29/0649 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/66462 ,  H01L29/7787 ,  H03F3/2176

Abstract: A device including a plurality of perforations to a semiconductor channel is provided. The device includes a semiconductor structure forming the semiconductor channel. Additionally, the device includes a source contact, a drain contact, and a gate contact to the semiconductor channel. The plurality of perforations can be located in the semiconductor structure below the gate contact. Furthermore, a perforation in the plurality of perforations can extend into the semiconductor structure beyond a location of the semiconductor channel.

Abstract translation: 提供了包括到半导体通道的多个穿孔的装置。 该器件包括形成半导体沟道的半导体结构。 此外，器件包括源极接触，漏极接触和到半导体通道的栅极接触。 多个穿孔可以位于门接触下方的半导体结构中。 此外，多个穿孔中的穿孔可以延伸到半导体结构中超过半导体通道的位置。

公开(公告)号：US20160035871A1

公开(公告)日：2016-02-04

申请号：US14885129

申请日：2015-10-16

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Mikhail Gaevski ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/861

CPC classification number: H01L29/78 ,  H01L23/367 ,  H01L29/0623 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/6609 ,  H01L29/66446 ,  H01L29/66477 ,  H01L29/7786 ,  H01L29/7831 ,  H01L29/7838 ,  H01L29/861 ,  H01L29/8613 ,  H01L29/872 ,  H01L29/93 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A lateral semiconductor device and/or design including a space-charge generating layer and a set of electrodes located on an opposite side of a device channel as contacts to the device channel is provided. The space-charge generating layer is configured to form a space-charge region to at least partially deplete the device channel in response to an operating voltage being applied to the contacts to the device channel.

Abstract translation: 提供了一种横向半导体器件和/或设计，其包括空间电荷产生层和位于器件沟道相对侧上的一组电极，作为与器件通道的接触。 空间电荷产生层被配置为响应于施加到器件通道的触点的工作电压而形成空间电荷区域以至少部分地耗尽器件沟道。

公开(公告)号：US20150179751A1

公开(公告)日：2015-06-25

申请号：US14636546

申请日：2015-03-03

Applicant: Sensor Electronic Technology, Inc.

Inventor： Mikhail Gaevski ,  Grigory Simin ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/45 ,  H01L33/36 ,  H01L33/32 ,  H01L29/20 ,  H01L21/283 ,  H01L21/324 ,  H01L29/40 ,  H01L33/00 ,  H01L29/778

CPC classification number: H01L29/452 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/28593 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/7787 ,  H01L33/382 ,  H01L2933/0016

Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.

Abstract translation: 提供了与半导体结构中的半导体层的穿孔欧姆接触。 穿孔欧姆接触可以包括一组穿孔元件，其可以包括横向渗透半导体层的一组金属突起。 穿孔元件可以通过基于半导体层的薄层电阻选择的特征长度刻度和接触半导体层的穿孔欧姆接触金属的每单位长度的接触电阻彼此分离。 该结构可以使用一组条件进行退火，所述条件被配置成确保形成该组金属突起。

公开(公告)号：US20130320352A1

公开(公告)日：2013-12-05

申请号：US13909621

申请日：2013-06-04

Applicant: Sensor Electronic Technology, Inc.

Inventor： Mikhail Gaevski ,  Grigory Simin ,  Maxim S Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L21/768 ,  H01L29/20

CPC classification number: H01L21/768 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/28593 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/452 ,  H01L33/38 ,  H01L2933/0016

Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.

公开(公告)号：US10483387B2

公开(公告)日：2019-11-19

申请号：US15464609

申请日：2017-03-21

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Mikhail Gaevski ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205

Abstract: A lateral/vertical device is provided. The device includes a device structure including a device channel having a lateral portion and a vertical portion. The lateral portion of the device channel can be located adjacent to a first surface of the device structure, and one or more contacts and/or a gate can be formed on the first surface. The device structure also includes a set of insulating layers located in the device structure between the lateral portion of the device channel and a second surface of the device structure opposite the first surface. An opening in the set of insulating layers defines a transition region between the lateral portion of the device channel and a vertical portion of the device channel. A contact to the vertical portion of the device channel can be located on the second surface.

公开(公告)号：US10224408B2

公开(公告)日：2019-03-05

申请号：US15601128

申请日：2017-05-22

Applicant: Sensor Electronic Technology, Inc.

Inventor： Mikhail Gaevski ,  Grigory Simin ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/38 ,  H01L29/45 ,  H01L29/20 ,  H01L21/285 ,  H01L29/417 ,  H01L29/778

Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.