Abstract:
A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.
Abstract:
A growth layer having a growth surface with protruding domains is described. The protruding domains can be separated by a substantially flat growth surface located between the protruding domains. A protruding domain can include an internal region that can be filled with a gas and/or can be partially or completely filled with one or more materials that differ from the material of the growth layer, which forms an outer surface of each of the protruding domains.
Abstract:
An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include a n-type semiconductor layer having a surface. A mesa can be located over a first portion of the surface of the n-type semiconductor layer and have a mesa boundary. A n-type contact region can be located over a second portion of the surface of the n-type semiconductor contact layer entirely distinct from the first portion, and be at least partially defined by the mesa boundary. A first n-type metallic contact layer can be located over at least a portion of the n-type contact region in proximity of the mesa boundary, where the first n-type metallic contact layer forms an ohmic contact with the n-type semiconductor layer. A second n-type metallic contact layer can be located over a second portion of the n-type contact region, where the second n-type metallic contact layer is formed of a reflective metallic material.
Abstract:
A contact to a semiconductor including sequential layers of Cr, Ti, and Al is provided, which can result in a contact with one or more advantages over Ti/Al-based and Cr/Al-based contacts. For example, the contact can: reduce a contact resistance; provide an improved surface morphology; provide a better contact linearity; and/or require a lower annealing temperature, as compared to the prior art Ti/Al-based contacts.
Abstract:
A device including a plurality of perforations to a semiconductor channel is provided. The device includes a semiconductor structure forming the semiconductor channel. Additionally, the device includes a source contact, a drain contact, and a gate contact to the semiconductor channel. The plurality of perforations can be located in the semiconductor structure below the gate contact. Furthermore, a perforation in the plurality of perforations can extend into the semiconductor structure beyond a location of the semiconductor channel.
Abstract:
A lateral semiconductor device and/or design including a space-charge generating layer and a set of electrodes located on an opposite side of a device channel as contacts to the device channel is provided. The space-charge generating layer is configured to form a space-charge region to at least partially deplete the device channel in response to an operating voltage being applied to the contacts to the device channel.
Abstract:
A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.
Abstract:
A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.
Abstract:
A lateral/vertical device is provided. The device includes a device structure including a device channel having a lateral portion and a vertical portion. The lateral portion of the device channel can be located adjacent to a first surface of the device structure, and one or more contacts and/or a gate can be formed on the first surface. The device structure also includes a set of insulating layers located in the device structure between the lateral portion of the device channel and a second surface of the device structure opposite the first surface. An opening in the set of insulating layers defines a transition region between the lateral portion of the device channel and a vertical portion of the device channel. A contact to the vertical portion of the device channel can be located on the second surface.
Abstract:
A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.