公开(公告)号：US20130260490A1

公开(公告)日：2013-10-03

申请号：US13852487

申请日：2013-03-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Jianyu Deng ,  Alexander Dobrinsky ,  Xuhong Hu ,  Remigijus Gaska ,  Michael Shur

IPC: H01L33/20 ,  H01L33/22

CPC classification number: H01L33/20 ,  H01L33/0095 ,  H01L33/22

Abstract: A light emitting device having improved light extraction is provided. The light emitting device can be formed by epitaxially growing a light emitting structure on a surface of a substrate. The substrate can be scribed to form a set of angled side surfaces on the substrate. For each angled side surface in the set of angled side surfaces, a surface tangent vector to at least a portion of each angled side surface in the set of angled side surfaces forms an angle between approximately ten and approximately eighty degrees with a negative of a normal vector of the surface of the substrate. The substrate can be cleaned to clean debris from the angled side surfaces.

Abstract translation: 提供了一种具有改进的光提取的发光器件。 可以通过在衬底的表面上外延生长发光结构来形成发光器件。 衬底可以被刻划以在衬底上形成一组成角度的侧表面。 对于所述一组倾斜的侧面中的每个成角度的侧表面，到所述一组成角度的侧表面中的每个成角度的侧表面的至少一部分的表面切向矢量形成大约十到八十度之间的角度，其中正常 底物表面的载体。 可以清洁基板以从成角度的侧面清洁碎屑。

公开(公告)号：US20150287602A1

公开(公告)日：2015-10-08

申请号：US14747150

申请日：2015-06-23

Applicant: Sensor Electronic Technology, Inc.

Inventor： Remigijus Gaska ,  Xuhong Hu ,  Michael Shur ,  Mikhail Gaevski

IPC: H01L21/283 ,  H01S5/30 ,  H01L33/40 ,  H01S5/042 ,  H01L31/0224 ,  H01L33/00

CPC classification number: H01L21/283 ,  H01L21/28264 ,  H01L21/28575 ,  H01L23/482 ,  H01L24/03 ,  H01L24/05 ,  H01L29/43 ,  H01L29/45 ,  H01L29/452 ,  H01L29/456 ,  H01L29/4966 ,  H01L31/022425 ,  H01L33/40 ,  H01L33/405 ,  H01L33/62 ,  H01L2224/03848 ,  H01L2224/05019 ,  H01L2224/0508 ,  H01L2224/05084 ,  H01L2224/051 ,  H01L2224/05116 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05644 ,  H01L2924/10323 ,  H01L2924/1033 ,  H01L2924/10334 ,  H01L2924/10344 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/3013 ,  H01L2924/00

Abstract: A contact to a semiconductor including sequential layers of Cr, Ti, and Al is provided, which can result in a contact with one or more advantages over Ti/Al-based and Cr/Al-based contacts. For example, the contact can: reduce a contact resistance; provide an improved surface morphology; provide a better contact linearity; and/or require a lower annealing temperature, as compared to the prior art Ti/Al-based contacts.

Abstract translation: 提供了与包括Cr，Ti和Al的连续层的半导体的接触，其可以导致与基于Ti / Al和Cr / Al的触点相关的一个或多个优点的接触。 例如，触点可以：降低接触电阻; 提供改进的表面形态; 提供更好的接触线性; 和/或要求较低的退火温度，与现有技术的Ti / Al基触点相比。

公开(公告)号：US20140308766A1

公开(公告)日：2014-10-16

申请号：US14316907

申请日：2014-06-27

Applicant: Sensor Electronic Technology, Inc.

Inventor： Remigijus Gaska ,  Xuhong Hu ,  Michael Shur

IPC: H01L21/768 ,  H01L33/62 ,  H01L21/283

CPC classification number: H01L29/43 ,  H01L21/283 ,  H01L21/7685 ,  H01L23/482 ,  H01L24/03 ,  H01L24/05 ,  H01L29/45 ,  H01L29/452 ,  H01L29/456 ,  H01L33/62 ,  H01L2224/03848 ,  H01L2224/05019 ,  H01L2224/0508 ,  H01L2224/05084 ,  H01L2224/051 ,  H01L2224/05116 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05644 ,  H01L2924/10323 ,  H01L2924/1033 ,  H01L2924/10334 ,  H01L2924/10344 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/00

Abstract: A contact to a semiconductor including sequential layers of Cr, Ti, and Al is provided, which can result in a contact with one or more advantages over Ti/Al-based and Cr/Al-based contacts. For example, the contact can: reduce a contact resistance; provide an improved surface morphology; provide a better contact linearity; and/or require a lower annealing temperature, as compared to the prior art Ti/Al-based contacts.

Abstract translation: 提供了与包括Cr，Ti和Al的连续层的半导体的接触，其可以导致与基于Ti / Al和Cr / Al的触点相关的一个或多个优点的接触。 例如，触点可以：降低接触电阻; 提供改进的表面形态; 提供更好的接触线性; 和/或要求较低的退火温度，与现有技术的Ti / Al基触点相比。

公开(公告)号：US20160149099A1

公开(公告)日：2016-05-26

申请号：US14984246

申请日：2015-12-30

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Jianyu Deng ,  Alexander Dobrinsky ,  Xuhong Hu ,  Remigijus Gaska ,  Michael Shur

IPC: H01L33/54 ,  H01L33/44 ,  H01L33/00 ,  H01L33/22 ,  H01L33/58

CPC classification number: H01L33/0095 ,  H01L33/20 ,  H01L33/22

Abstract: A light emitting device having improved light extraction is provided. The light emitting device can be formed by epitaxially growing a light emitting structure on a surface of a substrate. The substrate can be scribed to form a set of angled side surfaces on the substrate. For each angled side surface in the set of angled side surfaces, a surface tangent vector to at least a portion of each angled side surface in the set of angled side surfaces forms an angle between approximately ten and approximately eighty degrees with a negative of a normal vector of the surface of the substrate. The substrate can be cleaned to clean debris from the angled side surfaces.

公开(公告)号：US09064845B2

公开(公告)日：2015-06-23

申请号：US14316907

申请日：2014-06-27

Applicant: Sensor Electronic Technology, Inc.

Inventor： Remigijus Gaska ,  Xuhong Hu ,  Michael Shur

IPC: H01L29/43 ,  H01L29/45 ,  H01L21/283 ,  H01L33/62 ,  H01L23/482 ,  H01L23/00 ,  H01L21/768

CPC classification number: H01L29/43 ,  H01L21/283 ,  H01L21/7685 ,  H01L23/482 ,  H01L24/03 ,  H01L24/05 ,  H01L29/45 ,  H01L29/452 ,  H01L29/456 ,  H01L33/62 ,  H01L2224/03848 ,  H01L2224/05019 ,  H01L2224/0508 ,  H01L2224/05084 ,  H01L2224/051 ,  H01L2224/05116 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05644 ,  H01L2924/10323 ,  H01L2924/1033 ,  H01L2924/10334 ,  H01L2924/10344 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/00

Abstract: A contact to a semiconductor including sequential layers of Cr, Ti, and Al is provided, which can result in a contact with one or more advantages over Ti/Al-based and Cr/Al-based contacts. For example, the contact can: reduce a contact resistance; provide an improved surface morphology; provide a better contact linearity; and/or require a lower annealing temperature, as compared to the prior art Ti/Al-based contacts.

Abstract translation: 提供了与包括Cr，Ti和Al的连续层的半导体的接触，其可以导致与基于Ti / Al和Cr / Al的触点相关的一个或多个优点的接触。 例如，触点可以：降低接触电阻; 提供改进的表面形态; 提供更好的接触线性; 和/或要求较低的退火温度，与现有技术的Ti / Al基触点相比。

公开(公告)号：US10096742B2

公开(公告)日：2018-10-09

申请号：US14984246

申请日：2015-12-30

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Jianyu Deng ,  Alexander Dobrinsky ,  Xuhong Hu ,  Remigijus Gaska ,  Michael Shur

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/22

Abstract: A light emitting device having improved light extraction is provided. The light emitting device can be formed by epitaxially growing a light emitting structure on a surface of a substrate. The substrate can be scribed to form a set of angled side surfaces on the substrate. For each angled side surface in the set of angled side surfaces, a surface tangent vector to at least a portion of each angled side surface in the set of angled side surfaces forms an angle between approximately ten and approximately eighty degrees with a negative of a normal vector of the surface of the substrate. The substrate can be cleaned to clean debris from the angled side surfaces.

公开(公告)号：US09595636B2

公开(公告)日：2017-03-14

申请号：US13852487

申请日：2013-03-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S Shatalov ,  Jianyu Deng ,  Alexander Dobrinsky ,  Xuhong Hu ,  Remigijus Gaska ,  Michael Shur

IPC: H01L33/20 ,  H01L33/22 ,  H01L33/00

CPC classification number: H01L33/20 ,  H01L33/0095 ,  H01L33/22

Abstract: A light emitting device having improved light extraction is provided. The light emitting device can be formed by epitaxially growing a light emitting structure on a surface of a substrate. The substrate can be scribed to form a set of angled side surfaces on the substrate. For each angled side surface in the set of angled side surfaces, a surface tangent vector to at least a portion of each angled side surface in the set of angled side surfaces forms an angle between approximately ten and approximately eighty degrees with a negative of a normal vector of the surface of the substrate. The substrate can be cleaned to clean debris from the angled side surfaces.

Abstract translation: 提供了一种具有改进的光提取的发光器件。 可以通过在衬底的表面上外延生长发光结构来形成发光器件。 衬底可以被刻划以在衬底上形成一组成角度的侧表面。 对于所述一组倾斜的侧面中的每个成角度的侧表面，到所述一组成角度的侧表面中的每个成角度的侧表面的至少一部分的表面切向矢量形成大约十到八十度之间的角度，其中正常 底物表面的载体。 可以清洁基板以从成角度的侧面清洁碎屑。

公开(公告)号：US09514947B2

公开(公告)日：2016-12-06

申请号：US14747150

申请日：2015-06-23

Applicant: Sensor Electronic Technology, Inc.

Inventor： Remigijus Gaska ,  Xuhong Hu ,  Michael Shur ,  Mikhail Gaevski

IPC: H01L29/43 ,  H01L29/45 ,  H01L21/283 ,  H01L31/0224 ,  H01L33/40 ,  H01S5/042 ,  H01S5/30 ,  H01L23/482 ,  H01L23/00 ,  H01L33/62

CPC classification number: H01L21/283 ,  H01L21/28264 ,  H01L21/28575 ,  H01L23/482 ,  H01L24/03 ,  H01L24/05 ,  H01L29/43 ,  H01L29/45 ,  H01L29/452 ,  H01L29/456 ,  H01L29/4966 ,  H01L31/022425 ,  H01L33/40 ,  H01L33/405 ,  H01L33/62 ,  H01L2224/03848 ,  H01L2224/05019 ,  H01L2224/0508 ,  H01L2224/05084 ,  H01L2224/051 ,  H01L2224/05116 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05644 ,  H01L2924/10323 ,  H01L2924/1033 ,  H01L2924/10334 ,  H01L2924/10344 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/3013 ,  H01L2924/00

Abstract: A contact to a semiconductor including sequential layers of Cr, Ti, and Al is provided, which can result in a contact with one or more advantages over Ti/Al-based and Cr/Al-based contacts. For example, the contact can: reduce a contact resistance; provide an improved surface morphology; provide a better contact linearity; and/or require a lower annealing temperature, as compared to the prior art Ti/Al-based contacts.

Abstract translation: 提供了与包括Cr，Ti和Al的连续层的半导体的接触，其可以导致与基于Ti / Al和Cr / Al的触点相关的一个或多个优点的接触。 例如，触点可以：降低接触电阻; 提供改进的表面形态; 提供更好的接触线性; 和/或要求较低的退火温度，与现有技术的Ti / Al基触点相比。