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公开(公告)号:US20210025948A1
公开(公告)日:2021-01-28
申请号:US16521053
申请日:2019-07-24
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Jo BITO , Benjamin Stassen COOK , Dok Won LEE , Keith Ryan GREEN , Ricky Alan JACKSON , William David FRENCH
Abstract: A structure includes a substrate which includes a surface. The structure also includes a horizontal-type Hall sensor positioned within the substrate and below the surface of the substrate. The structure further includes a patterned magnetic concentrator positioned above the surface of the substrate, and a protective overcoat layer positioned above the magnetic concentrator.
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公开(公告)号:US20190025086A1
公开(公告)日:2019-01-24
申请号:US15656749
申请日:2017-07-21
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Dok Won LEE , Erika Lynn MAZOTTI , William David FRENCH
IPC: G01D5/16
CPC classification number: G01D5/16 , G01D5/145 , G01R33/09 , G01R33/096
Abstract: Some embodiments are directed to an anisotropic magneto-resistive (AMR) angle sensor. The sensor comprises a first Wheatstone bridge comprising a first serpentine resistor, a second serpentine resistor, a third serpentine resistor, and a fourth serpentine resistor. The sensor also comprises a second Wheatstone bridge comprising a fifth serpentine resistor, a sixth serpentine resistor, a seventh serpentine resistor, and an eighth serpentine resistor. The serpentine resistors comprise anisotropic magneto-resistive material that changes resistance in response to a change in an applied magnetic field. The sensor also includes a surrounding of anisotropic magneto-resistive material disposed in substantially a same plane as the serpentine resistors, enclosing the serpentine resistors, and electrically isolated from the serpentine resistors. The first Wheatstone bridge, the second Wheatstone bridge, and the surrounding of anisotropic magneto-resistive material are part of a sensor die.
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