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公开(公告)号：US20210072327A1
公开(公告)日：2021-03-11
申请号：US16565130
申请日：2019-09-09
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Jo BITO , Benjamin Stassen COOK , Dok Won LEE , Keith Ryan GREEN , Kenji OTAKE
Abstract: A structure includes a substrate which includes a surface. The structure also includes a horizontal-type Hall sensor positioned within the substrate and below the surface of the substrate. The structure further includes a protective overcoat layer positioned above the surface of the substrate, and a sphere-shaped magnetic concentrator positioned above the protective overcoat layer. Instead of or in addition to the sphere-shaped magnetic concentrator, the structure may include an embedded magnetic concentrator positioned within the substrate and below the horizontal-type Hall sensor.
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公开(公告)号：US20220018879A1
公开(公告)日：2022-01-20
申请号：US16932299
申请日：2020-07-17
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Dok Won LEE , Jo BITO , Keith Ryan GREEN
IPC: G01R15/20 , H01L43/04 , H01L43/06 , H01L23/495
Abstract: A packaged current sensor includes a lead frame, an integrated circuit, an isolation spacer, a first magnetic concentrator, and a second magnetic concentrator. The lead frame includes a conductor. The isolation spacer is between the lead frame and the integrated circuit. The first magnetic concentrator is aligned with the conductor. The second magnetic concentrator is aligned with the conductor.
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公开(公告)号：US20160154069A1
公开(公告)日：2016-06-02
申请号：US14557611
申请日：2014-12-02
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Mona M. EISSA , Dok Won LEE
Abstract: An integrated circuit includes a fluxgate magnetometer. The magnetic core of the fluxgate magnetometer is encapsulated with a layer of encapsulant of a nonmagnetic metal or a nonmagnetic alloy. The layer of encapsulate provides stress relaxation between the magnetic core material and the surrounding dielectric. A method for forming an integrated circuit has the magnetic core of a fluxgate magnetometer encapsulated with a layer of a nonmagnetic metal or nonmagnetic alloy to eliminate delamination and to substantially reduce cracking of the dielectric that surrounds the magnetic core.
Abstract translation: 集成电路包括磁通门磁强计。 磁通门磁力计的磁芯用非磁性金属或非磁性合金的密封剂层封装。 封装层在磁芯材料和周围电介质之间提供应力松弛。 用于形成集成电路的方法具有用非磁性金属或非磁性合金层封装的磁通门磁强计的磁芯，以消除分层并大大减少围绕磁芯的电介质的开裂。
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公开(公告)号：US20210025948A1
公开(公告)日：2021-01-28
申请号：US16521053
申请日：2019-07-24
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Jo BITO , Benjamin Stassen COOK , Dok Won LEE , Keith Ryan GREEN , Ricky Alan JACKSON , William David FRENCH
Abstract: A structure includes a substrate which includes a surface. The structure also includes a horizontal-type Hall sensor positioned within the substrate and below the surface of the substrate. The structure further includes a patterned magnetic concentrator positioned above the surface of the substrate, and a protective overcoat layer positioned above the magnetic concentrator.
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Patent Agency Ranking
公开(公告)号：US20190025086A1
公开(公告)日：2019-01-24
申请号：US15656749
申请日：2017-07-21
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Dok Won LEE , Erika Lynn MAZOTTI , William David FRENCH
IPC: G01D5/16
CPC classification number: G01D5/16 , G01D5/145 , G01R33/09 , G01R33/096
Abstract: Some embodiments are directed to an anisotropic magneto-resistive (AMR) angle sensor. The sensor comprises a first Wheatstone bridge comprising a first serpentine resistor, a second serpentine resistor, a third serpentine resistor, and a fourth serpentine resistor. The sensor also comprises a second Wheatstone bridge comprising a fifth serpentine resistor, a sixth serpentine resistor, a seventh serpentine resistor, and an eighth serpentine resistor. The serpentine resistors comprise anisotropic magneto-resistive material that changes resistance in response to a change in an applied magnetic field. The sensor also includes a surrounding of anisotropic magneto-resistive material disposed in substantially a same plane as the serpentine resistors, enclosing the serpentine resistors, and electrically isolated from the serpentine resistors. The first Wheatstone bridge, the second Wheatstone bridge, and the surrounding of anisotropic magneto-resistive material are part of a sensor die.
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6.发明申请公开(公告)号：US20190018082A1
公开(公告)日：2019-01-17
申请号：US15651206
申请日：2017-07-17
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Dok Won LEE
Abstract: Some embodiments are directed to an anisotropic magneto-resistive (AMR) angle sensor die. The die comprises a plurality of AMR angle sensors, each of the plurality of AMR angle sensors comprising a first Wheatstone bridge and a second Wheatstone bridge, wherein an angle position output of the sensor die includes a combination of angle position outputs of each of the plurality of AMR angle sensors.
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公开(公告)号：US20250109973A1
公开(公告)日：2025-04-03
申请号：US18478361
申请日：2023-09-29
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Preetinder GARCHA , Lawrence COTTON , Dok Won LEE , Baher HAROUN
Abstract: In a described example, a position sensor can include a first magnetic field sensor unit having a first sensor output, a second magnet field sensor unit having a second sensor output, one or more coils having one or more footprints overlapping the first and second magnetic field sensor units, and a processing circuit having a first sensor input, a second sensor input, a current terminal, and a sensing output, the first sensor input coupled to the first sensor output, the second sensor input coupled to the second sensor output, and the current terminal coupled to the one or more coils.
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公开(公告)号：US20220357369A1
公开(公告)日：2022-11-10
申请号：US17871873
申请日：2022-07-22
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Dok Won LEE , Jo BITO , Keith Ryan GREEN
IPC: G01R15/20 , H01L43/06 , H01L23/495 , H01L43/04
Abstract: In one example, circuitry is formed in a semiconductor die. A magnetic concentrator is formed on a surface of the semiconductor die and over the circuitry. An isolation spacer is placed on a lead frame. The semiconductor die is placed on the isolation spacer, and the magnetic concentrator is aligned to overlap the lead frame. Electrical interconnects are formed between the semiconductor die and the lead frame.
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公开(公告)号：US20190267539A1
公开(公告)日：2019-08-29
申请号：US15907000
申请日：2018-02-27
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Keith Ryan GREEN , Dok Won LEE
Abstract: A Hall effect sensor comprises a semiconductor substrate, a first well formed in the semiconductor substrate, a first ohmic contact formed in the first well, a second ohmic contact formed in the first well, a first terminal electrically coupled to the first ohmic contact, a second terminal electrically coupled to the second ohmic contact, and a first metal layer formed over the semiconductor substrate. The first metal layer comprises a first interconnect and a first trace, where the first trace is formed over the first well, and where the first interconnect electrically couples a first part of the first well to a second part of the first well. The first and second ohmic contacts are each positioned between the first part and the second part of the first well, where the first interconnect is electrically isolated from the first trace.
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