公开(公告)号：WO2006057709A2

公开(公告)日：2006-06-01

申请号：PCT/US2005035582

申请日：2005-10-03

Applicant: TOKYO ELECTRON LTD ,  IBM ,  SUZUKI KENJI ,  GUIDOTTI EMMANUEL ,  LEUSINK GERRIT J ,  MCFEELY FENTON R

Inventor： SUZUKI KENJI ,  GUIDOTTI EMMANUEL ,  LEUSINK GERRIT J ,  MCFEELY FENTON R

IPC: C23C16/16

CPC classification number: H01L21/76843 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76873

Abstract: A method (300) for increasing deposition rates of metal layers from metal­carbonyl precursors (52, 152) by mixing a vapor of the metal-carbonyl precursor (52, 152) with CO gas. The method (300) includes providing a substrate (25, 125) in a process chamber (10, 110) of a deposition system (1, 100), forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate (25, 125, 400, 402) to the process gas to deposit a metal layer (440, 460) on the substrate (25, 125, 400, 402) by a thermal chemical vapor deposition process.

Abstract translation: 一种用于通过将羰基金属前体（52,152）的蒸气与CO气体混合来提高金属层从金属羰基前体（52,152）的沉积速率的方法（300）。 方法（300）包括在沉积系统（1,100）的处理室（10,110）中提供衬底（25,125），形成含有羰基金属前体蒸气和CO气体的工艺气体，以及 将所述衬底（25,125,400,402）暴露于所述工艺气体，以通过热化学气相沉积工艺将金属层（440,460）沉积在所述衬底（25,125,400,402）上。

公开(公告)号：WO2006057709A8

公开(公告)日：2007-05-31

申请号：PCT/US2005035582

申请日：2005-10-03

Applicant: TOKYO ELECTRON LTD ,  IBM ,  SUZUKI KENJI ,  GUIDOTTI EMMANUEL ,  LEUSINK GERRIT J ,  MCFEELY FENTON R ,  MALHOTRA SANDRA G

Inventor： SUZUKI KENJI ,  GUIDOTTI EMMANUEL ,  LEUSINK GERRIT J ,  MCFEELY FENTON R ,  MALHOTRA SANDRA G

IPC: C23C16/16 ,  H01L21/768

CPC classification number: H01L21/76843 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76873

Abstract: A method (300) for increasing deposition rates of metal layers from metal­carbonyl precursors (52, 152) by mixing a vapor of the metal-carbonyl precursor (52, 152) with CO gas. The method (300) includes providing a substrate (25, 125) in a process chamber (10, 110) of a deposition system (1, 100), forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate (25, 125, 400, 402) to the process gas to deposit a metal layer (440, 460) on the substrate (25, 125, 400, 402) by a thermal chemical vapor deposition process.

Abstract translation: 一种用于通过将羰基金属前体（52,152）的蒸气与CO气体混合来提高金属层从金属羰基前体（52,152）的沉积速率的方法（300）。 方法（300）包括在沉积系统（1,100）的处理室（10,110）中提供衬底（25,125），形成含有羰基金属前体蒸气和CO气体的工艺气体，以及 将所述衬底（25,125,400,402）暴露于所述工艺气体，以通过热化学气相沉积工艺将金属层（440,460）沉积在所述衬底（25,125,400,402）上。

公开(公告)号：WO2006057711A3

公开(公告)日：2006-07-13

申请号：PCT/US2005035596

申请日：2005-10-03

Applicant: TOKYO ELECTRON LTD ,  IBM ,  SUZUKI KENJI ,  GUIDOTTI EMMANUEL ,  LEUSINK GERRIT J ,  HARA MASAMICHI ,  KUROIWA DAISUKE ,  MALHOTRA SANDRA G ,  MCFEELY FENTON ,  YOUNG ROBERT R JR

Inventor： SUZUKI KENJI ,  GUIDOTTI EMMANUEL ,  LEUSINK GERRIT J ,  HARA MASAMICHI ,  KUROIWA DAISUKE ,  MALHOTRA SANDRA G ,  MCFEELY FENTON ,  YOUNG ROBERT R JR

IPC: C23C16/448

CPC classification number: C23C16/4481 ,  C23C16/16

Abstract: In a solid precursor evaporation system (50, 150, 300, 300') configured for use in a thin film deposition system (1, 100), such as thermal chemical vapor deposition (TCVD), a method for preparing one or more trays (330, 340) of solid precursor is described. The solid precursor may be formed on a coating substrate, such as a tray (330, 340), using one or more of dipping techniques, spin-on techniques, and sintering techniques.

Abstract translation: 在配置用于薄膜沉积系统（1,100）中的固体前驱体蒸发系统（50,150,300,300'）中，例如热化学气相沉积（TCVD），用于制备一个或多个托盘（ 描述了固体前体的形式。 可以使用浸渍技术，旋涂技术和烧结技术中的一种或多种，​​在涂层基材例如托盘（330,340）上形成固体前体。

公开(公告)号：AT519870T

公开(公告)日：2011-08-15

申请号：AT05807544

申请日：2005-10-03

Applicant: TOKYO ELECTRON LTD ,  IBM

Inventor： SUZUKI KENJI ,  GUIDOTTI EMMANUEL ,  LEUSINK GERRIT ,  MCFEELY FENTON ,  MALHOTRA SANDRA G

IPC: C23C16/16

Abstract: A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.

公开(公告)号：AU1420499A

公开(公告)日：1999-08-02

申请号：AU1420499

申请日：1998-11-18

Applicant: TOKYO ELECTRON ARIZONA INC ,  TOKYO ELECTRON LTD

Inventor： ARENA CHANTAL ,  BETRAM RONALD T ,  GUIDOTTI EMMANUEL

IPC: C23C16/02 ,  C23C16/18 ,  C23C16/44 ,  H01L21/285

Abstract: A method of eliminating an edge effect in chemical vapor deposition of a metal such as copper on a semiconductor substrate surface. A susceptor in a reaction chamber is exposed to a plasma. A substrate contained thereon and processed by chemical vapor deposition has a uniform metal layer at edge and non-edge surfaces. A plurality of substrates may be processed before reexposing the susceptor to the plasma.

公开(公告)号：DE69801231D1

公开(公告)日：2001-08-30

申请号：DE69801231

申请日：1998-10-07

Applicant: TOKYO ELECTRON LTD

Inventor： ARENA CHANTAL ,  BERTRAM T ,  GUIDOTTI EMMANUEL ,  HILLMAN T

IPC: C23C16/18 ,  C23C16/44

Abstract: A method of producing a thick metal film on a substrate surface with a substantially smooth surface morphology and low resistivity. A substrate is exposed to a plasma. A first thin metal film is deposited on the substrate by chemical vapor deposition. The substrate with the film deposited thereon is exposed to a plasma, and a second thin metal film is deposited on top of the first film. The substrate may undergo subsequent cycles of plasma exposure and film deposition until a desired film thickness is obtained. The resulting film has a smooth surface morphology and low resistivity.

公开(公告)号：DE69801231T2

公开(公告)日：2001-11-08

申请号：DE69801231

申请日：1998-10-07

Applicant: TOKYO ELECTRON LTD

Inventor： ARENA CHANTAL ,  BERTRAM T ,  GUIDOTTI EMMANUEL ,  HILLMAN T

IPC: C23C16/18 ,  C23C16/44

Abstract: A method of producing a thick metal film on a substrate surface with a substantially smooth surface morphology and low resistivity. A substrate is exposed to a plasma. A first thin metal film is deposited on the substrate by chemical vapor deposition. The substrate with the film deposited thereon is exposed to a plasma, and a second thin metal film is deposited on top of the first film. The substrate may undergo subsequent cycles of plasma exposure and film deposition until a desired film thickness is obtained. The resulting film has a smooth surface morphology and low resistivity.