公开(公告)号：WO2006088562A3

公开(公告)日：2006-12-14

申请号：PCT/US2005047694

申请日：2005-12-30

Applicant: TOKYO ELECTRON LTD ,  IBM ,  GUIDOTTI EMMANUEL P ,  SUZUKI KENJI ,  LEUSINK GERRIT J ,  MCFEELY FENTON

Inventor： GUIDOTTI EMMANUEL P ,  SUZUKI KENJI ,  LEUSINK GERRIT J ,  MCFEELY FENTON

IPC: C23C16/44 ,  C23C16/16

CPC classification number: C23C16/4481 ,  C23C16/16 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45565

Abstract: A method and system (1, 100) for improved delivery of a solid precursor (52, 152). A chemically inert coating (43) is provided on internal surfaces (41) in a precursor delivery line (40, 140) to reduce decomposition of a relatively unstable precursor vapor in the precursor delivery line (40, 140), thereby allowing increased delivery of the precursor vapor to a processing zone (33, 133) for depositing a layer on a substrate (25, 125). The solid precursor (52, 152) can, for example, be a ruthenium carbonyl or a rhenium carbonyl. The inert coating (43) can, for example, be a C X F y -containing polymer, such as polytetrafluoroethylene or ethylene­chlorotrifluoroethylene. Other benefits of using an inert coating (43) include easy periodic cleaning of deposits from the precursor delivery line (40, 140).

Abstract translation: 一种用于改进固体前体（52,152）的输送的方法和系统（1,100）。 在前体输送管线（40,140）的内表面（41）上提供化学惰性涂层（43）以减少前体输送管线（40,140）中相对不稳定的前体蒸气的分解，从而允许增加 所述前体蒸汽通向用于在衬底（25,125）上沉积层的处理区（33,133）。 固体前体（52,152）可以例如是羰基钌或羰基铼。 惰性涂层（43）可以例如是含有聚合物的聚合物，例如聚四氟乙烯或乙烯 - 三氟氯乙烯。 使用惰性涂层（43）的其他益处包括易于定期清洁来自前体输送管线（40,140）的沉积物。

公开(公告)号：WO2006088562A2

公开(公告)日：2006-08-24

申请号：PCT/US2005/047694

申请日：2005-12-30

Applicant: TOKYO ELECTRON LIMITED ,  INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GUIDOTTI, Emmanuel, P ,  SUZUKI, Kenji ,  LEUSINK, Gerrit, J. ,  MCFEELY, Fenton

Inventor： GUIDOTTI, Emmanuel, P ,  SUZUKI, Kenji ,  LEUSINK, Gerrit, J. ,  MCFEELY, Fenton

IPC: C23C16/44 ,  C23C16/16

CPC classification number: C23C16/4481 ,  C23C16/16 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45565

Abstract: A method and system (1, 100) for improved delivery of a solid precursor (52, 152). A chemically inert coating (43) is provided on internal surfaces (41) in a precursor delivery line (40, 140) to reduce decomposition of a relatively unstable precursor vapor in the precursor delivery line (40, 140), thereby allowing increased delivery of the precursor vapor to a processing zone (33, 133) for depositing a layer on a substrate (25, 125). The solid precursor (52, 152) can, for example, be a ruthenium carbonyl or a rhenium carbonyl. The inert coating (43) can, for example, be a C X F y -containing polymer, such as polytetrafluoroethylene or ethylene­chlorotrifluoroethylene. Other benefits of using an inert coating (43) include easy periodic cleaning of deposits from the precursor delivery line (40, 140).

Abstract translation: 一种用于改进固体前体（52,152）的输送的方法和系统（1,100）。 在前体输送管线（40,140）中的内表面（41）上提供化学惰性涂层（43），以减少前体输送管线（40,140）中相对不稳定的前体蒸汽的分解，从而允许增加 前体蒸气传送到用于在衬底（25,125）上沉积层的处理区（33,133）。 固体前体（52,152）可以例如是羰基钌或羰基铼。 惰性涂层（43）可以例如是含有聚四氟乙烯或亚乙基三氯三氟乙烯的聚合物。 使用惰性涂层（43）的其他益处包括容易地从前体输送管线（40,140）清洁沉积物。

公开(公告)号：WO2006057711A2

公开(公告)日：2006-06-01

申请号：PCT/US2005/035596

申请日：2005-10-03

Applicant: TOKYO ELECTRON LIMITED ,  INTERNATIONAL BUSINESS MACHINES CORPORATION ,  SUZUKI, Kenji ,  GUIDOTTI, Emmanuel ,  LEUSINK, Gerrit, J. ,  HARA, Masamichi ,  KUROIWA, Daisuke ,  MALHOTRA, Sandra, G. ,  McFEELY, Fenton ,  YOUNG, Robert, R., Jr.

Inventor： SUZUKI, Kenji ,  GUIDOTTI, Emmanuel ,  LEUSINK, Gerrit, J. ,  HARA, Masamichi ,  KUROIWA, Daisuke ,  MALHOTRA, Sandra, G. ,  McFEELY, Fenton ,  YOUNG, Robert, R., Jr.

IPC: C23C16/448

CPC classification number: C23C16/4481 ,  C23C16/16

Abstract: In a solid precursor evaporation system (50, 150, 300, 300') configured for use in a thin film deposition system (1, 100), such as thermal chemical vapor deposition (TCVD), a method for preparing one or more trays (330, 340) of solid precursor is described. The solid precursor may be formed on a coating substrate, such as a tray (330, 340), using one or more of dipping techniques, spin-on techniques, and sintering techniques.

Abstract translation: 在被配置为用于诸如热化学气相沉积（TCVD）的薄膜沉积系统（1,100）中的固体前体蒸发系统（50,150,300,300'）中，一种用于制备一个或多个托盘的方法 330,340）固体前体。 固体前体可以使用浸渍技术，旋涂技术和烧结技术中的一种或多种形成在涂覆基材上，例如托盘（330,340）上。

公开(公告)号：WO2007095407A1

公开(公告)日：2007-08-23

申请号：PCT/US2007/060561

申请日：2007-01-16

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  SUZUKI, Kenji ,  GUIDOTTI, Emmanuel, P. ,  LEUSINK, Gerrit, J. ,  HARA, Masamichi ,  KUROIWA, Daisuke ,  ISHIZAKA, Tadahiro

Inventor： SUZUKI, Kenji ,  GUIDOTTI, Emmanuel, P. ,  LEUSINK, Gerrit, J. ,  HARA, Masamichi ,  KUROIWA, Daisuke ,  ISHIZAKA, Tadahiro

IPC: C23C16/448

CPC classification number: C23C16/4481

Abstract: A high conductance, multi-tray film precursor evaporation system (1 ) coupled with a high conductance vapor delivery system (40) is described for increasing deposition rate by increasing exposed surface area of film precursor. The multi-tray film precursor evaporation system (50) includes one or more trays (340). Each tray is configured to support and retain film precursor (350) in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel (318) within the stackable trays and through an outlet (322) in the solid precursor evaporation system.

Abstract translation: 描述了与高电导蒸气输送系统（40）耦合的高电导多托盘膜前体蒸发系统（1），以通过增加膜前体的暴露表面积来提高沉积速率。 多托盘膜前体蒸发系统（50）包括一个或多个托盘（340）。 每个托盘构造成支撑并保持例如固体粉末形式或固体片剂形式的膜前体（350）。 此外，每个托盘构造成在膜前体被加热的同时提供载气在膜前体上的高电导流。 例如，载气在膜前体向内流动，并且垂直向上流过可堆叠托盘内的流动通道（318）并通过固体前驱物蒸发系统中的出口（322）。

公开(公告)号：WO2004065658A1

公开(公告)日：2004-08-05

申请号：PCT/US2004/000649

申请日：2004-01-12

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON ARIZONA, INC. ,  NEMOTO, Takenao ,  GUIDOTTI, Emmanuel ,  LEUSINK, Gert

Inventor： NEMOTO, Takenao ,  GUIDOTTI, Emmanuel ,  LEUSINK, Gert

IPC: C23C16/44

CPC classification number: H01L21/02046 ,  C23C16/0245 ,  C23C16/4405 ,  H01J37/321 ,  H01J37/32862 ,  H01L21/02063 ,  H01L21/76814 ,  Y02C20/30 ,  Y02P70/605

Abstract: A cleaning method is provided using a cleaning gas mixture of hydrogen and inert gas, for example a mixture in which the hydrogen content is between 20 percent and 80 percent by volume, provided to the chamber (16) of a semiconductor wafer processing apparatus (10) and an ICP power source only to generate a high density plasma in the gas mixture without biasing the surface to be cleaned. In examples of the invention, Si and Si02 contaminants or CFx contaminants are cleaned from a silicon contact (46) prior to subsequent metal deposition. In another example of the invention, silicon residue is cleaned from internal chamber surfaces before oxide etching to recover the baseline oxide etch rate.

Abstract translation: 使用氢和惰性气体的清洁气体混合物（例如其中氢含量为20体积％至80体积％之间的混合物）提供给半导体晶片处理设备（10）的室（16）提供清洁方法 ）和ICP电源，仅在气体混合物中产生高密度等离子体而不偏压要清洁的表面。 在本发明的实施例中，在随后的金属沉积之前，从硅触点（46）清除Si和SiO 2污染物或CF x污染物。 在本发明的另一个实例中，在氧化物蚀刻之前，从内室表面清除硅渣，以恢复基线氧化物蚀刻速率。

公开(公告)号：WO2006058310A1

公开(公告)日：2006-06-01

申请号：PCT/US2005/043018

申请日：2005-11-29

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  SUZUKI, Kenji ,  GUIDOTTI, Emmanuel, P. ,  LEUSINK, Gerrit, J. ,  HARA, Masamichi ,  KUROIWA, Daisuke

Inventor： SUZUKI, Kenji ,  GUIDOTTI, Emmanuel, P. ,  LEUSINK, Gerrit, J. ,  HARA, Masamichi ,  KUROIWA, Daisuke

CPC classification number: C23C16/4481 ,  C23C16/16

Abstract: A high conductance, multi-tray solid precursor evaporation system (50, 150, 300, 300') coupled with a high conductance vapor delivery system (40, 140) is described for increasing deposition rate by increasing exposed surface area of solid precursor (350). The multi-tray solid precursor evaporation system (50, 150, 300, 300') includes a base tray (330) with one or more upper trays (340). Each tray (330, 340) is configured to support and retain film precursor (350) in, for example, solid powder form or solid tablet form. Additionally, each tray (330, 340) is configured to provide for a high conductance flow of carrier gas over the film precursor (350) while the film precursor (350) is heated. For example, the carrier gas flows inward over the film precursor (350), and vertically upward through a flow channel (318) within the stackable trays (340) and through an outlet (322) in the solid precursor evaporation system (50, 150, 300, 300').

Abstract translation: 描述了与高电导蒸气输送系统（40,140）耦合的高电导多托盘固体前体蒸发系统（50,150,300,300'），以通过增加固体前体（350）的暴露表面积来提高沉积速率 ）。 多托盘固体前体蒸发系统（50,150,300,300'）包括具有一个或多个上托盘（340）的基托（330）。 每个托盘（330,340）被配置为以例如固体粉末形式或固体片剂形式支撑并保持膜前体（350）。 另外，每个托盘（330,340）构造成在膜前体（350）被加热的同时提供载气在膜前体（350）上的高电导流。 例如，载气在膜前体（350）上向内流动，并且垂直向上流过可堆叠托盘（340）内的流动通道（318）并通过固体前体蒸发系统（50,150）中的出口（322） ，300,300'）。

公开(公告)号：WO2006057709A3

公开(公告)日：2006-06-01

申请号：PCT/US2005/035582

申请日：2005-10-03

Applicant: TOKYO ELECTRON LIMITED ,  INTERNATIONAL BUSINESS MACHINES CORPORATION ,  SUZUKI, Kenji ,  GUIDOTTI, Emmanuel ,  LEUSINK, Gerrit, J. ,  MCFEELY, Fenton, R.

Inventor： SUZUKI, Kenji ,  GUIDOTTI, Emmanuel ,  LEUSINK, Gerrit, J. ,  MCFEELY, Fenton, R.

IPC: C23C16/16 ,  H01L21/768

Abstract: A method (300) for increasing deposition rates of metal layers from metal­carbonyl precursors (52, 152) by mixing a vapor of the metal-carbonyl precursor (52, 152) with CO gas. The method (300) includes providing a substrate (25, 125) in a process chamber (10, 110) of a deposition system (1, 100), forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate (25, 125, 400, 402) to the process gas to deposit a metal layer (440, 460) on the substrate (25, 125, 400, 402) by a thermal chemical vapor deposition process.

公开(公告)号：WO2006057709A2

公开(公告)日：2006-06-01

申请号：PCT/US2005035582

申请日：2005-10-03

Applicant: TOKYO ELECTRON LTD ,  IBM ,  SUZUKI KENJI ,  GUIDOTTI EMMANUEL ,  LEUSINK GERRIT J ,  MCFEELY FENTON R

Inventor： SUZUKI KENJI ,  GUIDOTTI EMMANUEL ,  LEUSINK GERRIT J ,  MCFEELY FENTON R

IPC: C23C16/16

CPC classification number: H01L21/76843 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76873

Abstract: A method (300) for increasing deposition rates of metal layers from metal­carbonyl precursors (52, 152) by mixing a vapor of the metal-carbonyl precursor (52, 152) with CO gas. The method (300) includes providing a substrate (25, 125) in a process chamber (10, 110) of a deposition system (1, 100), forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate (25, 125, 400, 402) to the process gas to deposit a metal layer (440, 460) on the substrate (25, 125, 400, 402) by a thermal chemical vapor deposition process.

Abstract translation: 一种用于通过将羰基金属前体（52,152）的蒸气与CO气体混合来提高金属层从金属羰基前体（52,152）的沉积速率的方法（300）。 方法（300）包括在沉积系统（1,100）的处理室（10,110）中提供衬底（25,125），形成含有羰基金属前体蒸气和CO气体的工艺气体，以及 将所述衬底（25,125,400,402）暴露于所述工艺气体，以通过热化学气相沉积工艺将金属层（440,460）沉积在所述衬底（25,125,400,402）上。

公开(公告)号：WO2006006991A1

公开(公告)日：2006-01-19

申请号：PCT/US2005/012804

申请日：2005-04-14

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  GUIDOTTI, Emmanuel

Inventor： GUIDOTTI, Emmanuel

IPC: C23C16/44

CPC classification number: C23C16/4405 ,  C23C16/52 ,  H01J37/32862

Abstract: A method (700, 800) and system (1) for controlling an exothermic chamber cleaning process in a process chamber (10). The method (700, 800) includes exposing a system component (20) to a cleaning gas (15) in the chamber cleaning process to remove a material deposit (45) from the system component (20), monitoring at least one temperature-related system component parameter in the chamber cleaning process, determining the cleaning status of the system component (20) from the monitoring, and based upon the status from the determining, performing one of the following: (a) continuing the exposing and monitoring, or (b) stopping the process.

Abstract translation: 一种用于控制处理室（10）中的放热室清洁过程的方法（700,800）和系统（1）。 方法（700,800）包括在室清洁过程中将系统部件（20）暴露于清洁气体（15）以从系统部件（20）移除材料沉积物（45），监测至少一个温度相关 系统组件参数，从监控中确定系统组件（20）的清洁状态，并根据确定的状态，执行以下操作之一：（a）继续暴露和监视，或（ b）停止该过程。

公开(公告)号：WO2006057709A8

公开(公告)日：2007-05-31

申请号：PCT/US2005035582

申请日：2005-10-03

Applicant: TOKYO ELECTRON LTD ,  IBM ,  SUZUKI KENJI ,  GUIDOTTI EMMANUEL ,  LEUSINK GERRIT J ,  MCFEELY FENTON R ,  MALHOTRA SANDRA G

Inventor： SUZUKI KENJI ,  GUIDOTTI EMMANUEL ,  LEUSINK GERRIT J ,  MCFEELY FENTON R ,  MALHOTRA SANDRA G

IPC: C23C16/16 ,  H01L21/768

CPC classification number: H01L21/76843 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76873

Abstract: A method (300) for increasing deposition rates of metal layers from metal­carbonyl precursors (52, 152) by mixing a vapor of the metal-carbonyl precursor (52, 152) with CO gas. The method (300) includes providing a substrate (25, 125) in a process chamber (10, 110) of a deposition system (1, 100), forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate (25, 125, 400, 402) to the process gas to deposit a metal layer (440, 460) on the substrate (25, 125, 400, 402) by a thermal chemical vapor deposition process.

Abstract translation: 一种用于通过将羰基金属前体（52,152）的蒸气与CO气体混合来提高金属层从金属羰基前体（52,152）的沉积速率的方法（300）。 方法（300）包括在沉积系统（1,100）的处理室（10,110）中提供衬底（25,125），形成含有羰基金属前体蒸气和CO气体的工艺气体，以及 将所述衬底（25,125,400,402）暴露于所述工艺气体，以通过热化学气相沉积工艺将金属层（440,460）沉积在所述衬底（25,125,400,402）上。